Current topics in MOVPERICHTER, Wolfgang; WEYERS, Markus.Progress in crystal growth and characterization of materials. 1997, Vol 35, Num 2-4, issn 0960-8974, 193 p.Conference Proceedings

ICMOVPE-XI: Proceedings of the Eleventh International Conference on Metalorganic Vapor Phase Epitaxy, Berlin, Germany, 3-7 June 2002KROST, Alois; MULLIN, J. Brian; WEYERS, Markus et al.Journal of crystal growth. 2003, Vol 248, issn 0022-0248, 612 p.Conference Proceedings

In situ processing of III-V semiconductors : Mile stones and future prospectsKIZUKI, H.Progress in crystal growth and characterization of materials. 1997, Vol 35, Num 2-4, pp 151-175, issn 0960-8974Conference Paper

Self-organized quantum wires and dots : New opportunities for device applicationsLEDENTSOV, N. N.Progress in crystal growth and characterization of materials. 1997, Vol 35, Num 2-4, pp 289-305, issn 0960-8974Conference Paper

Metalorganic vapour phase epitaxy of GaN and GaInN/GaN heterostructures and quantum wellsSCHOLZ, F.Progress in crystal growth and characterization of materials. 1997, Vol 35, Num 2-4, pp 243-262, issn 0960-8974Conference Paper

Investigation of breakdown and DC behavior in HBTs with (Al, Ga)As collector layerMAASSDORF, Andre; KURPAS, Paul; BRUNNER, Frank et al.IEEE electron device letters. 2004, Vol 25, Num 10, pp 672-674, issn 0741-3106, 3 p.Article

Oxygen doping of AlGaAs in MOVPE using triethoxyarsineFUJITA, Yasuhisa.Journal of crystal growth. 2003, Vol 248, pp 144-148, issn 0022-0248, 5 p.Conference Paper

In-situ etching of GaAs/Al_xGa_1-xAs by CBr₄MAASSDORF, Andre; WEYERS, Markus.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4754-4756, issn 0022-0248, 3 p.Conference Paper

Defect analysis in AlGaN layers on AIN templates obtained by epitaxial lateral overgrowthMOGILATENKO, Anna; KULLER, Viola; KNAUER, Arne et al.Journal of crystal growth. 2014, Vol 402, pp 222-229, issn 0022-0248, 8 p.Article

Selective area growth on planar masked InP substrates by metal organic vapour phase epitaxy (MOVPE)VAN CAENEGEM, T; MOERMAN, I; DEMEESTER, P et al.Progress in crystal growth and characterization of materials. 1997, Vol 35, Num 2-4, pp 263-288, issn 0960-8974Conference Paper

The growth of antimonides by MOVPEAARDVARK, A; MASON, N. J; WALKER, P. J et al.Progress in crystal growth and characterization of materials. 1997, Vol 35, Num 2-4, pp 207-241, issn 0960-8974Conference Paper

Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfacesLAPEYRADE, Mickael; MUHIN, Anton; EINFELDT, Sven et al.Semiconductor science and technology. 2013, Vol 28, Num 12, issn 0268-1242, 125015.1-125015.8Article

Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates : Polarization-Field Control in Nitride Light EmittersWERNICKE, Tim; PLOCH, Simon; HOFFMANN, Veit et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 3, pp 574-577, issn 0370-1972, 4 p.Article

GaN-based ultraviolet light-emitting diodes with multifinger contactsRODRIGUEZ, Hernán; LOBO, Neysha; EINFELDT, Sven et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 11, pp 2585-2588, issn 1862-6300, 4 p.Article

High growth enhancement factor in arrayed waveguide by MOVPE selective area growthMORIGUCHI, Yusuke; KIHARA, Tatsuya; SHIMOMURA, Kazuhiko et al.Journal of crystal growth. 2003, Vol 248, pp 395-399, issn 0022-0248, 5 p.Conference Paper

MOVPE growth of B_xGa_1-xAs, B_xGa_1-x-yIn_yAs, and B_xAl_1-xAs alloys on (0 0 1) GaAsGOTTSCHALCH, V; LEIBIGER, G; BENNDORF, G et al.Journal of crystal growth. 2003, Vol 248, pp 468-473, issn 0022-0248, 6 p.Conference Paper

Metalorganic chemical vapor deposition of group III nitrides: a discussion of critical issuesKELLER, Stacia; DENBAARS, Steven P.Journal of crystal growth. 2003, Vol 248, pp 479-486, issn 0022-0248, 8 p.Conference Paper

Structure and energetics of nitride surfaces under MOCVD growth conditionsVAN DE WALLE, Chris G; NEUGEBAUER, J.Journal of crystal growth. 2003, Vol 248, pp 8-13, issn 0022-0248, 6 p.Conference Paper

Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodesKASPARI, Christian; ZORN, Martin; WEYERS, Markus et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5175-5177, issn 0022-0248, 3 p.Conference Paper

Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniquesKRTSCHIL, A; DADGAR, A; KROST, A et al.Journal of crystal growth. 2003, Vol 248, pp 542-547, issn 0022-0248, 6 p.Conference Paper

Computational chemistry predictions of reaction processes in organometallic vapor phase epitaxySIMKA, H; WILLIS, B. G; LENGYEL, I et al.Progress in crystal growth and characterization of materials. 1997, Vol 35, Num 2-4, pp 117-149, issn 0960-8974Conference Paper

Orientation control of GaN {1 1 2̄ 2} and {1 0 1̄ 3̄} grown on (1 0 1̄ 0) sapphire by metal-organic vapor phase epitaxyPLOCH, Simon; FRENTRUP, Martin; WERNICKE, Tim et al.Journal of crystal growth. 2010, Vol 312, Num 15, pp 2171-2174, issn 0022-0248, 4 p.Article

Advances in the modeling of MOVPE processesKARPOV, S. Yu.Journal of crystal growth. 2003, Vol 248, pp 1-7, issn 0022-0248, 7 p.Conference Paper

Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometryBALMER, R. S; MARTIN, T.Journal of crystal growth. 2003, Vol 248, pp 216-221, issn 0022-0248, 6 p.Conference Paper

(AlGa)As composition profile analysis of trenches overgrown with MOVPEHOFMANN, Lars; RUDLOFF, Dirk; RECHENBERG, Ingrid et al.Journal of crystal growth. 2001, Vol 222, Num 3, pp 465-470, issn 0022-0248Article