CHARGE CARRIER TRANSPORT IN GATE-VOLTAGE-CONTROLLED HETEROEPITAXIAL INDIUM ARSENIDE LAYERS.WIEDER HH.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 41; NO 2; PP. 185-195; BIBL. 23 REF.Article

INDIUM PHOSPHIDE ACCUMULATION-MODE FIELD-EFFECT TRANSISTORSWIEDER HH.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 108-110; BIBL. 18 REF.Article

SOME ASPECTS OF THE TECHNOLOGY OF III-V COMPOUND SEMICONDUCTING LAYERSWIEDER HH.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 100; NO 4; PP. 391-394Article

ELECTRICAL AND GALVANOMAGNETIC MEASUREMENTS ON THIN FILMS AND EPILAYERS.WIEDER HH.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 31; NO 1-2; PP. 123-138; BIBL. 1 P.Article

FERMI LEVEL AND SURFACE BARRIER OF GA_XIN_1-XAS ALLOYSWIEDER HH.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 170-171; BIBL. 15 REF.Article

ELECTRON-BEAM MICROZONE REFINING OF NARROW BAND-GAP SEMICONDUCTING ALLOY LAYERS.WIEDER HH.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 6; PP. 1292-1293; BIBL. 17 REF.Article

TRANSPORT COEFFICIENTS OF INAS EPILAYERS.WIEDER HH.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 206-208; BIBL. 12 REF.Article

THICKNESS DEPENDANCE OF ELECTRON MOBILITY OF INSB FILMSWIEDER HH.1972; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1972; VOL. 9; NO 4; PP. 1193-1196; BIBL. 16 REF.Serial Issue

MAGNETIC BUBBLE DOMAIN MEMORIES IN EPITAXIAL GARNET FILMS.TOMLINSON JL; WIEDER HH.1975; RADIO ELECTRON. ENGR; G.B.; DA. 1975; VOL. 45; NO 12; PP. 725-737; BIBL. 1 P. 1/2Article

OPTICAL STUDIES ON THE BAND STRUCTURE OF GA⁰,08)IN⁰,92)AS⁰,18)P⁰,82)CASPERS HH; WIEDER HH.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 4; PP. 403-406; BIBL. 12 REF.Article

MONITORY CARRIER LIFETIME IN IN AS EPILAYERS.WIEDER HH; COLLINS DA.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 12; PP. 742-743; BIBL. 9 REF.Article

THERMALLY CONVERTED SURFACE LAYERS IN SEMI-INSULATING GAAS.LUM WY; WIEDER HH.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 213-215; BIBL. 9 REF.Article

PHOTOLUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAASLUM WY; WIEDER HH.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 12; PP. 6187-6188; BIBL. 13 REF.Article

MAGNETORESISTANCE MOBILITY PROFILING OF MESFET CHANNELSSITES JR; WIEDER HH.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2277-2281; BIBL. 10 REF.Article

THE THIN FILM MIS SURFACE PHOTODIODELILE DL; WIEDER HH.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 1; PP. 15-20; BIBL. 12 REF.Serial Issue

ELECTRON BEAM MODULATION OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORSWIEDER HH; DAVIS NM; FLESNER LD et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 943-945; BIBL. 10 REF.Article

ELECTRONIC PROFILE OF N-INAS ON SEMI-INSULATING GAASWASHBURN HA; SITES JR; WIEDER HH et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4872-4878; BIBL. 21 REF.Article

INVERSION-MODE INSULATED GATE GA_0.47 IN_0.53 AS FIELD-EFFECT TRANSISTORSWIEDER HH; CLAWSON AR; ELDER DI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 3; PP. 73-74; BIBL. 9 REF.Article

QUATERNARY ALLOY INFRARED HETEROFUNCTION DETECTORS.CLAWSON AR; LUM WY; WIEDER HH et al.1978; OPT. ENGNG; USA; DA. 1978; VOL. 17; NO 6; PP. 666-670; BIBL. 24 REF.Article

EPILAYER-SUBSTRATE INTERFACES OF SN-DOPED GAAS.LUM WY; CLAWSON AR; WIEDER HH et al.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 4; PP. 1007-1010; BIBL. 15 REF.Article

HIGH SPEED RESPONSE OF A GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR TO ELECTRON-BEAM EXCITATIONFLESNER LD; DAVIS NM; WIEDER HH et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3873-3877; BIBL. 13 REF.Article

IN_XGA_1-XAS_GAMMA P_1-GAMMA /INP HETEROJUNCTION PHOTODIODES.WIEDER HH; CLAWSON AR; MCWILLIAMS GE et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 7; PP. 468-470; BIBL. 10 REF.Article

EPILAYER-SUBSTRATE INTERFACES OF GE-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY.LUM WY; CLAWSON AR; ELDER DI et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 6; PP. 3333-3336; BIBL. 14 REF.Article

QUATERNARY ALLOY IN_XGA_1-XAS_YP_1-Y/INP PHOTODETECTORS.CLAWSON AR; LUM WY; MCWILLIAMS GE et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 9; PP. 549-551; BIBL. 4 REF.Article

THERMAL DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES.LUM WY; WIEDER HH; KOSCHEL WH et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 1; PP. 1-3; BIBL. 13 REF.Article