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Nitrous oxide emission from wetland rice soil as affected by the application of controlled-availability fertilizers and mid-season aerationYAN, X; DU, L; SHI, S et al.Biology and fertility of soils. 2000, Vol 32, Num 1, pp 60-66, issn 0178-2762Article

Ferromagnetic order at surfaces of ultrathin epitaxial fcc γ-Fe(111)p(1×1) films on Cu(111) = Ordre ferromagnétique aux surfaces de couches ultraminces épitaxiques c.f.c. γ-Fe(111)p(1×1) sur Cu(111)RAU, C; SCHNEIDER, C; XING, G et al.Physical review letters. 1986, Vol 57, Num 25, pp 3221-3224, issn 0031-9007Article

2012 Electronic Material ConferenceCALDWELL, J; GOLDMAN, R; PHILLIPS, J et al.Journal of electronic materials. 2013, Vol 42, Num 5, issn 0361-5235, 147 p.Conference Proceedings

Conduction- and Valence-Band Energies in Bulk InAs_1―xSb_x and Type II InAs_1―xSb_x/InAs Strained-Layer SuperlatticesYOUXI LIN; DING WANG; DONETSKY, Dmitry et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 918-926, issn 0361-5235, 9 p.Conference Paper

Formation of Nanodimensional 3C-SiC Structures from Rice HusksGORZKOWSKI, E. P; QADRI, S. B; RATH, B. B et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 799-804, issn 0361-5235, 6 p.Conference Paper

Growth of AgGaTe₂ Layers by a Closed-Space Sublimation MethodURUNO, Aya; KOBAYASHI, Masakazu.Journal of electronic materials. 2013, Vol 42, Num 5, pp 859-862, issn 0361-5235, 4 p.Conference Paper

Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si EpitaxyLEATHERSICH, Jeffrey M; TUNGARE, Mihir; XIAOJUN WENG et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 833-837, issn 0361-5235, 5 p.Conference Paper

Fermi Level Control of Point Defects During Growth of Mg-Doped GaNBRYAN, Zachary; HOFFMANN, Marc; SITAR, Zlatko et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 815-819, issn 0361-5235, 5 p.Conference Paper

Room-Temperature Quantum Cascade Laser: ZnO/Zn_1―xMg_xO Versus GaN/Al_xGa_1―xNHUNG CHI CHOU; MAZADY, Anas; ZELLER, John et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 882-888, issn 0361-5235, 7 p.Conference Paper

Primary temporal inverted papilloma with premalignant changeZHOU, H; CHEN, Z; LI, H et al.Journal of laryngology and otology. 2011, Vol 125, Num 2, pp 206-209, issn 0022-2151, 4 p.Article

Friction and wear of synthetic diamondBROOKES, E. J; GREENWOOD, P; XING, G et al.International journal of refractory metals & hard materials. 1999, Vol 17, Num 1-3, pp 69-77, issn 0958-0611Conference Paper

5-HT_1A receptor mRNA expressions differ in the embryonic spinal cord of male and female ratsZHANG, L; BARKER, J. L; XING, G et al.Neuroscience letters. 1997, Vol 237, Num 1, pp 41-44, issn 0304-3940Article

Ferromagnetic order at (100) p (1×1) surfaces of bulk paramagnetic vanadium = Ordre ferromagnétique aux surfaces (100) p (1×1) du vanadium paramagnétique massifRAU, C; LIU, C; SCHMALZBAUER, A et al.Physical review letters. 1986, Vol 57, Num 18, pp 2311-2313, issn 0031-9007Article

IMPAIRED SYNAPTIC VESICLE RECYCLING CONTRIBUTES TO PRESYNAPTIC DYSFUNCTION IN LIPOPROTEIN LIPASE-DEFICIENT MICELIU, X; ZHANG, B; ZHANG, T et al.Neuroscience. 2014, Vol 280, pp 275-281, issn 0306-4522, 7 p.Article

Characterization of Colloidal Quantum Dot Ligand Exchange by X-ray Photoelectron SpectroscopyATEWOLOGUN, Ayomide; WANGYAO GE; STIFF-ROBERTS, Adrienne D et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 809-814, issn 0361-5235, 6 p.Conference Paper

Nonradiative Energy Transfer Between Colloidal Quantum-Dot Phosphors and Silicon Carbide DiodesJIE LIU; FAN ZHANG; GUANJUN YOU et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 805-808, issn 0361-5235, 4 p.Conference Paper

Si Doping of GaN in Hydride Vapor-Phase EpitaxyRICHTER, E; STOICA, T; ZEIMER, U et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 820-825, issn 0361-5235, 6 p.Conference Paper

Nitrous oxide emissions from vegetables grown in a polytunnel treated with high rates of applied nitrogen fertilizers in Southern ChinaMIN, J; SHI, W; XING, G et al.Soil use and management. 2012, Vol 28, Num 1, pp 70-77, issn 0266-0032, 8 p.Article

Two-dimensional ferromagnetism of ultra-thin artificial vanadium films = Ferromagnétisme bidimensionnel des couches artificielles de vanadium ultramincesRAU, C; XING, G; LIU, C et al.Physics letters. A. 1989, Vol 135, Num 3, pp 227-230, issn 0375-9601Article

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared SpectroscopyIMAI, D; ISHITANI, Y; FUJIWARA, M et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 875-881, issn 0361-5235, 7 p.Conference Paper

Cluster and Thickness Dependence of Ferromagnetism in Nickel In Situ-Doped Amorphous AlN Thin FilmsTANAKA, H; JADWISIENCZAK, W. M; KAYA, S et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 844-848, issn 0361-5235, 5 p.Conference Paper

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier LayersREUTERS, Benjamin; WILLE, A; KETTENISS, N et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 826-832, issn 0361-5235, 7 p.Conference Paper

Synthesis, Structures, and Multiferroic Properties of Strontium Hexaferrite CeramicsGUOLONG TAN; XIUNA CHEN.Journal of electronic materials. 2013, Vol 42, Num 5, pp 906-911, issn 0361-5235, 6 p.Conference Paper