Growth of large KDP crystals for laser fusion experimentsSASAKI, T; YOKOTANI, A.Journal of crystal growth. 1990, Vol 99, Num 1-4, pp 820-826, issn 0022-0248, 7 p., 2Conference Paper

Estimation of surface tension of molten silicon using a dynamic hanging dropSANG-IK CHUNG; IZUNOME, K; YOKOTANI, A et al.Japanese journal of applied physics. 1995, Vol 34, Num 5B, pp L631-L634, issn 0021-4922, 2Article

CsB₃O₅ : a new nonlinear optical crystalYICHENG WU; SASAKI, T; NAKAI, S et al.Applied physics letters. 1993, Vol 62, Num 21, pp 2614-2615, issn 0003-6951Article

Observation of adsorption site of molecules and atoms provided by the pulsed laser deposition method on Si(1 1 1 )-7 x 7 surfaceYOKOTANI, A; OKAZAKI, Y; NURULHUSNA, K et al.Optical materials (Amsterdam). 2010, Vol 32, Num 7, pp 759-763, issn 0925-3467, 5 p.Conference Paper

Observation of optical inhomogeneities in flux grown KTP crystalsYOKOTANI, A; MIYAMOTO, A; SASAKI, T et al.Journal of crystal growth. 1991, Vol 110, Num 4, pp 963-967, issn 0022-0248Article

A chromogenic limulus test for detection of microbes that decreases the laser damage threshold of potassium dihydrogen phosphate crystalsYOKOTANI, A; NISHIDA, Y; FUJIOKA, K et al.Journal of applied physics. 1987, Vol 61, Num 9, pp 4696-4698, issn 0021-8979Article

Mass spectrometric study of photo dissociation of organic molecules by vacuum-ultraviolet irradiation for development of analysis techniqueWASAMOTO, M; KATTO, M; KAKU, M et al.Applied surface science. 2009, Vol 255, Num 24, pp 9861-9863, issn 0169-4332, 3 p.Conference Paper

GeO₂ and SiO₂ thin film preparation with CVD using ultraviolet excimer lampsKUROSAWA, K; MAEZONO, Y; MIYANO, J.-I et al.Journal de physique. IV. 2001, Vol 83, pp Pr3.739-Pr3.745, issn 1155-4339Conference Paper

Room temperature deposition of GeO₂ thin film using dielectric barrier discharge driven excimer lampsMAEZONO, Y; YANAGITA, H; NISHI, K et al.Journal de physique. IV. 2001, Vol 83, pp Pr3.811-Pr3.816, issn 1155-4339Conference Paper

Growth and optical characterization of large potassium titanyl phosphate crystalsSASAKI, T; MIYAMOTO, A; YOKOTANI, A et al.Journal of crystal growth. 1993, Vol 128, Num 1-4, pp 950-955, issn 0022-0248, 2Conference Paper

Improvement of the bulk laser damage threshold of potassium dihydrogen phosphate crystals by reducing the organic impurities in growth solutionNISHIDA, Y; YOKOTANI, A; SASAKI, T et al.Applied physics letters. 1988, Vol 52, Num 6, pp 420-421, issn 0003-6951Article

X-ray topographic study of flux grown KTP crystalsHALFPENNY, P. J; O'NEILL, L; SHERWOOD, J. N et al.Journal of crystal growth. 1991, Vol 113, Num 3-4, pp 722-725, issn 0022-0248Article

Extremely high damage threshold of a new nonlinear crystal L-arginine phosphate and its deuterium compoundYOKOTANI, A; SASAKI, T; YOSHIDA, K et al.Applied physics letters. 1989, Vol 55, Num 26, pp 2692-2693, issn 0003-6951Article

Influence of bacteria in a potassium dihydrogen phosphate solution on the growth habit of crystalsSASAKI, T; YOKOTANI, A; FUJIOKA, K et al.Japanese journal of applied physics. 1987, Vol 26, Num 11, pp L1767-L1769, issn 0021-4922, part 2Article

Fast growth of KDP single crystals by electrodialysis methodYOKOTANI, A; KOIDE, H; SASAKI, T et al.Journal of crystal growth. 1984, Vol 67, Num 3, pp 627-632, issn 0022-0248Article

Temperature dependence of phase-matching angle of second and third harmonic generation in type-II KDP crystalYOKOTANI, A; SASAKI, T; YAMANAKA, T et al.Japanese journal of applied physics. 1986, Vol 25, Num 1, pp 161-162, issn 0021-4922, 1Article

OFI argon excimer amplifier for intense subpicosecond VUV pulse generationKAKU, M; KUBODERA, S; ODA, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7131, issn 0277-786X, isbn 978-0-8194-7365-3 0-8194-7365-0, 71311C.1-71311C.6Conference Paper

Silica film preparation by chemical vapor deposition using vacuum ultraviolet excimer lampsKUROSAWA, K; TAKEZOE, N; YANAGIDA, H et al.Applied surface science. 2000, Vol 168, Num 1-4, pp 37-40, issn 0169-4332Conference Paper

SiO₂ thin film preparation using dielectric barrier discharge-driven excimer lampsTAKEZOE, N; YOKOTANI, A; KUROSAWA, K et al.Applied surface science. 1999, Vol 138-39, pp 340-343, issn 0169-4332Conference Paper

X-ray emission spectroscopic studies of silicon precipitation in surface layer of SiO2 induced by argon excimer laser irradiationKUROSAWA, K; HERMAN, P. R; KURMAEV, E. Z et al.Applied surface science. 1998, Vol 126, Num 1-2, pp 83-91, issn 0169-4332Article

Photochemical reactions in silicon nitride with ArF excimer laserKUROSAWA, K; HERMAN, P. R; TAKIGAWA, Y et al.SPIE proceedings series. 1997, pp 59-65, isbn 0-8194-2402-1Conference Paper

Laser properties of new organic nonlinear optical crystal chalcone derivativesKITAOKA, Y; SASAKI, T; NAKAI, S et al.Applied physics letters. 1990, Vol 56, Num 21, pp 2074-2076, issn 0003-6951Article

Formation of macroscopic hillocks on the prismatic faces of KDP crystals due to microbes in the solutionYOKOTANI, A; FUJIOKA, K; NISHIDA, Y et al.Journal of crystal growth. 1987, Vol 85, Num 3, pp 549-552, issn 0022-0248Article

Study of SiO₂-films deposited by adding N₂O or O₂ to TEOS in photo-chemical vapor deposition at room temperatureMOTOYAMA, Y; MIYANO, J.-I; TOSHIKAWA, K et al.Journal de physique. IV. 2001, Vol 83, pp Pr3.1131-Pr3.1137, issn 1155-4339Conference Paper

Fabrication, characteristics, and performance of diamond mirrors for vacuum ultraviolet excimer lasersKUROSAWA, K; SONOUCHI, R; YOKOTANI, A et al.Optical engineering (Bellingham. Print). 1995, Vol 34, Num 5, pp 1405-1409, issn 0091-3286Article