Influence des dislocations et microdéfauts du support sur la formation de la structure de dislocation d'une couche homoépitaxiqueMARKOV, A. V; MIL'VIDSKIJ, M. G; YUGOVA, T. G et al.Kristallografiâ. 1985, Vol 30, Num 3, pp 535-541, issn 0023-4761Article

Antiphase boundaries in GaAs layers on Si and GeVDOVIN, V. I; MIL'VIDSKII, M. G; YUGOVA, T. G et al.Journal of crystal growth. 1993, Vol 132, Num 3-4, pp 477-482, issn 0022-0248Article

Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substratesSTEINMAN, E. A; VDOVIN, V. I; YUGOVA, T. G et al.Semiconductor science and technology. 1999, Vol 14, Num 6, pp 582-588, issn 0268-1242Article

Dislocation-related luminescence in Er-implanted siliconSOBOLEV, N. A; GUSEV, O. B; SHEK, E. I et al.Journal of luminescence. 1998, Vol 80, Num 1-4, pp 357-361, issn 0022-2313Conference Paper

Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structuresAVRUTIN, V. S; IZYUMSKAYA, N. F; VYATKIN, A. F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 350-354, issn 0921-5107Conference Paper

Effect of substrate-surface orientation on the properties of GaAs homoepitaxial layers grown by liquid-phase epitaxyGOVORKOV, A. V; MIL'VIDSSKII, M. G; NOVIKOV, A. G et al.Soviet physics. Crystallography. 1992, Vol 37, Num 5, pp 689-692, issn 0038-5638Article

Influence of solid-solution composition on defect formation in Ge_xSi_1-x/Si heterostructures prepared by MBEVDOVIN, V. I; LYUTOVICH, K. L; MIL'VIDSKII, M. G et al.Soviet physics. Crystallography. 1992, Vol 37, Num 2, pp 253-257, issn 0038-5638Article

Influence of nature and composition of quaternary solid solutions of A^IIIB^V compounds on formation of a dislocation structure in epitaxial heterocompositionsVDOVIN, V. I; KRASIL'NIKOV, V. S; YUGOVA, T. G et al.Soviet physics. Crystallography. 1991, Vol 36, Num 3, pp 414-417, issn 0038-5638Article

Particularités de la formation des défauts au cours du processus de croissance des monocristaux d'arséniure d'indium dopés par l'étainANASTAS'EVA, N. A; BUBLIK, V. T; KARATAEV, V. V et al.Kristallografiâ. 1987, Vol 32, Num 1, pp 220-227, issn 0023-4761Article

Dislocation pattern formation in epitaxial structures based on SiGe alloysYUGOVA, T. G; VDOVIN, V. I; MIL'VIDSKII, M. G et al.Thin solid films. 1998, Vol 336, Num 1-2, pp 112-115, issn 0040-6090Conference Paper

Antiphase boundaries in GaAs layersVDOVIN, V. I; MIL'VIDSKII, M. G; YUGOVA, T. G et al.Soviet physics. Crystallography. 1991, Vol 36, Num 3, pp 411-414, issn 0038-5638Article

Influence de la composition des solutions solides sur les conditions de croissance cohérente des couches épitaxiques de GaxIn1-xAsyP1-yKRASIL'NIKOV, V. S; YUGOVA, T. G; BUBLIK, V. T et al.Kristallografiâ. 1988, Vol 33, Num 6, pp 1469-1477, issn 0023-4761Article

Etude de la formation de défauts à la surface support-couche de structures homoépitaxiques en GaAs dopées par diverses impuretésYUGOVA, T. G; VDOVIN, V. I; GANINA, N. V et al.Kristallografiâ. 1984, Vol 29, Num 5, pp 990-994, issn 0023-4761Article

Formation de défauts dans les structures épitaxiques de la solution solide InAsxSbyP1-x-yVDOVIN, V. I; ZAJTSEV, A. A; KORCHAGIN, YU. N et al.Kristallografiâ. 1984, Vol 29, Num 4, pp 764-769, issn 0023-4761Article

Deep centers in bulk AIN and their relation to low-angle dislocation boundariesPOLYAKOV, A. Y; SMIRNOV, N. B; MAKAROV, Yu. N et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4939-4941, issn 0921-4526, 3 p.Conference Paper

Dislocation structure formation in SiGe/Si(001) heterostructures with low-temperature buffer layersVDOVIN, V. I; MÜHLBERGER, M; RZAEV, M. M et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13313-13318, issn 0953-8984, 6 p.Conference Paper

Structural defects and dislocation-related photoluminescence in erbium-implanted siliconSOBOLEV, N. A; EMEL'YANOV, A. M; PIZZINI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 167-169, issn 0921-5107Conference Paper

Effect of various factors upon the stoichiometry of GaAs homoepitaxial layers grown by LPEGOVORKOV, A. V; NOVIKOV, A. G; MILVIDSKII, M. G et al.Physica status solidi. A. Applied research. 1994, Vol 144, Num 1, pp 121-130, issn 0031-8965Article

Defect formation in the active region of heteroepitaxial compositions GaAlAs/GaAs for solar cells, during sign-changing thermal actionsKALININ, A. A; MIL'VIDSKII, M. G; NULLER, T. A et al.Soviet physics. Crystallography. 1991, Vol 36, Num 3, pp 418-422, issn 0038-5638Article

Effect of doping and heat treatment on the lattice constant in homoepitaxial GaAs layers prepared by LPEGOVORKOV, A. V; EFIMOV, A. G; NOVIKOV, A. G et al.Soviet physics. Crystallography. 1991, Vol 36, Num 6, pp 875-877, issn 0038-5638Article

Influence des impuretés isovalentes sur la formation des défauts dans les monocristaux de InAsANASTAS'EVA, N. A; BUBLIK, V. T; KARATAEV, V. V et al.Kristallografiâ. 1984, Vol 29, Num 6, pp 1170-1175, issn 0023-4761Article

Influence des dislocations d'incompatibilité des réseaux sur l'hétérogénéité dans le volume des propriétés de luminescence et de structure des couches épitaxiques de solution solide de GaInAsFBRUK, A. S; VDOVIN, V. I; GOVORKOV, A. V et al.Kristallografiâ. 1987, Vol 32, Num 1, pp 178-182, issn 0023-4761Article

Correlation between defect structure and luminescence spectra in monocrystalline erbium-implanted siliconSOBOLEV, N. A; EMEL'YANOV, A. M; SHEK, E. I et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13241-13246, issn 0953-8984, 6 p.Conference Paper

Effect of alloy composition on defect formation in GexSi1-x/Si heterostructures obtained by molecular beam epitaxyVDOVIN, V. I; MIL'VIDSKII, M. G; YUGOVA, T. G et al.Journal of crystal growth. 1994, Vol 141, Num 1-2, pp 109-118, issn 0022-0248Article

Defect formation in Si_xGe_1-x/Ge (111) heterostructures obtained by means of hydride epitaxyVDOVIN, V. I; MIL'VIDSKII, M. G; YUGOVA, T. G et al.Crystallography reports. 1993, Vol 38, Num 4, pp 573-574, issn 1063-7745Article