Quantum dot diode lasers for optical communication systemsZHUKOV, A. E; KOVSH, A. R.Quantum electronics (Woodbury). 2008, Vol 38, Num 5, pp 409-423, issn 1063-7818, 15 p.Article

GaAs-based long-wavelength lasersUSTINOV, V. M; ZHUKOV, A. E.Semiconductor science and technology. 2000, Vol 15, Num 8, pp R41-R54, issn 0268-1242Article

MBE-grown metamorphic lasers for applications at telecom wavelengthsLEDENTSOV, N. N; SHCHUKIN, V. A; ZHUKOV, A. E et al.Journal of crystal growth. 2007, Vol 301-302, pp 914-922, issn 0022-0248, 9 p.Conference Paper

Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100-1230-nm spectral rangeANDREEVA, E. V; ZHUKOV, A. E; PROKHOROV, V. V et al.Quantum electronics (Woodbury). 2006, Vol 36, Num 6, pp 527-531, issn 1063-7818, 5 p.Article

1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistanceLEDENTSOV, N. N; KOVSH, A. R; SOSHNIKOV, I. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61330S.1-61330S.12, issn 0277-786X, isbn 0-8194-6175-X, 1VolConference Paper

Optical spin polarization in double charged InAs self-assembled quantum dotsKATEVICH, V. K; MERKULOV, I. A; SHIRYAEV, A. Yu et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 3, pp 387-391, issn 0031-8965, 5 p.Conference Paper

Output power and its limitation in ridge-waveguide 1.3 μm wavelength quantum-dot lasersZHUKOV, A. E; KOVSH, A. R; LIVSHITS, D. A et al.Semiconductor science and technology. 2003, Vol 18, Num 8, pp 774-781, issn 0268-1242, 8 p.Article

High performance narrow stripe quantum-dot lasers with etched waveguideOUYANG, D; LEDENTSOV, N. N; BIMBERG, D et al.Semiconductor science and technology. 2003, Vol 18, Num 12, pp L53-L54, issn 0268-1242Article

Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-V profilingKOKOREV, M. F; MALEEV, N. A; PAKHNIN, D. V et al.Nanotechnology (Bristol. Print). 2001, Vol 12, Num 4, pp 500-503, issn 0957-4484Conference Paper

3.5 W continuous wave operation from quantum dot laserZHUKOV, A. E; KOVSH, A. R; USTINOV, V. M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 70-74, issn 0921-5107Conference Paper

Quantum dot lasers: breakthrough in optoelectronicsBIMBERG, D; GRUNDMANN, M; TSATSUL'NIKOV, A. F et al.Thin solid films. 2000, Vol 367, Num 1-2, pp 235-249, issn 0040-6090Conference Paper

InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papersMAXIMOV, M. V; KRESTNIKOV, I. L; BIMBERG, D et al.Journal of electronic materials. 2000, Vol 29, Num 5, pp 487-493, issn 0361-5235Article

Metastable population of self-organized InAs/GaAs quantum dots : Special issue papers on quantum dotsSOBOLEV, M. M; KOVSH, A. R; USTINOV, V. M et al.Journal of electronic materials. 1999, Vol 28, Num 5, pp 491-495, issn 0361-5235Article

InAs-GaAs quantum dots : From growth to lasersBIMBERG, D; LEDENTSOV, N. N; ALFEROV, Z. I et al.Physica status solidi. B. Basic research. 1996, Vol 194, Num 1, pp 159-173, issn 0370-1972Article

Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dotsGLADYSHEV, A. G; KRYZHANOVSKAYA, N. V; USTINOV, V. M et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 6, pp 1359-1364, issn 1862-6300, 6 p.Conference Paper

Dynamics and collective properties of non-equilibrium carriers in highly photoexcited quantum wellsHANNA, S; SEILMEIER, A; SHALYGIN, V. A et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S290-S292, issn 0268-1242Conference Paper

Optical spin orientation under inter- and intra-subband transitions in QWsTARASENKO, S. A; IVCHENKO, E. L; VOROBJEV, L. E et al.Journal of superconductivity. 2003, Vol 16, Num 2, pp 419-422, issn 0896-1107, 4 p.Article

Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wellsALESHKIN, V. Ya; GAPONOVA, D. M; ZHUKOV, A. E et al.SPIE proceedings series. 2003, pp 209-212, isbn 0-8194-4824-9, 4 p.Conference Paper

InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength rangeMALEEV, N. A; KRESTNIKOV, I. L; TSATSULNIKOV, A. F et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 803-806, issn 0370-1972Conference Paper

Spin-polarized electron transport and emission from strained superlatticesAMBRAJEI, A. N; CLENDENIN, J. E; EGOROV, A. Yu et al.Applied surface science. 2000, Vol 166, pp 40-44, issn 0169-4332Conference Paper

Self-organized InAs quantum dots in a silicon matrixEGOROV, A. Yu; KOVSH, A. R; USTINOV, V. M et al.Journal of crystal growth. 1999, Vol 201202, pp 1202-1204, issn 0022-0248Conference Paper

A thermodynamic analysis of the growth of III-V compounds with two volatile group V elements by molecular-beam epitaxyEGOROV, A. Yu; KOVSH, A. R; USTINOV, V. M et al.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 69-74, issn 0022-0248Conference Paper

Low-threshold injection lasers based on vertically coupled quantum dotsUSTINOV, V. M; EGOROV, A. YU; KOP'EV, P. S et al.Journal of crystal growth. 1997, Vol 175-76, pp 689-695, issn 0022-0248, 2Conference Paper

InAs/GaAs quantum dots radiative recombination from zero-dimensional statesGRUNDMANN, M; LEDENTSOV, N. N; HEYDENREICH, J et al.Physica status solidi. B. Basic research. 1995, Vol 188, Num 1, pp 249-258, issn 0370-1972Conference Paper

Hot luminescence increase of higher subband in semiconductor multi-quantum-well structure under a magnetic fieldIVANOV, YU. L; CHURAKOV, G. V; USTINOV, V. M et al.Solid state communications. 1994, Vol 90, Num 3, pp 173-174, issn 0038-1098Article