assessment of deep levels in photorefractive materials by transient photoelectric methods : Physique du traitement des faisceaux lumineux et des imagesZIELINGER, J. P; TAPIERO, M.Journal de physique. III (Print). 1993, Vol 3, Num 7, pp 1327-1344, issn 1155-4320Article

On the photoconductivity relaxation in ZnIn₂S₄SERPI, A; ZIELINGER, J. P.Physica status solidi. A. Applied research. 1988, Vol 108, Num 1, pp 351-362, issn 0031-8965Article

Investigation of photoelectronic processes in CdIn₂S₄ by photoinduced current transient spectroscopySERPI, A; TAPIERO, M; ZIELINGER, J. P et al.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp 241-249, issn 0031-8965Article

The problem of quantum yield and diffusion length measurements in presence of a thick frontal «dead layer»TAPIERO, M; NOGUET, C; ZIELINGER, J. P et al.Photovoltaic solar energy conference. 5. 1984, pp 103-108Conference Paper

Luminescence investigations performed on differently prepared thin CdS layersBOUCHENAKI, C; ULLRICH, B; ZIELINGER, J. P et al.Journal of luminescence. 1991, Vol 48-49, pp 649-654, issn 0022-2313, 6 p., p.2Conference Paper

Caractérisation des niveaux profonds dans le matériau photoréfractif Bi₁₂GeO₂₀ (BGO) par analyse de transitoires de courant photo-induits et détermination de la mobilité des porteurs par la méhtode du temps de vol = Characterization of deep levels in the photorefractive material Bi₁₂GeO₂₀ (BGO) by analyzing photoinduced current transients and determination of the charge carrier mobility by the time-of-flight methodEn Nouri, Abdelali; Zielinger, J. P.1991, 182 p.Thesis

Preparation and characterization of Zn₄Sb₃TAPIERO, M; TARABICHI, S; GIES, J. G et al.Solar energy materials. 1985, Vol 12, Num 4, pp 257-274, issn 0165-1633Article

Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. I: Review and analysis of some basic problemsBALLAND, J. C; ZIELINGER, J. P; NOGUET, C et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 1, pp 57-70, issn 0022-3727Article

Photoconductivity studies in vanadium-doped CdTe and Cd_1-xZn_XTeALLACHEN, K; TAPIERO, M; GUELLIL, Z et al.Journal of crystal growth. 1998, Vol 184-85, pp 1142-1146, issn 0022-0248Conference Paper

Growth, spectroscopic and photorefractive investigation of vanadium-doped cadmium tellurideLAUNAY, J. C; MAZOYER, V; TAPIERO, M et al.Applied physics. A, Solids and surfaces. 1992, Vol 55, Num 1, pp 33-40, issn 0721-7250Article

Determination of the mobility and transport properties of photocarriers in Bi₁₂GeO₂₀ by the time-of-flight techniqueENNOURI, A; TAPIERO, M; VOLA, J. P et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2180-2191, issn 0021-8979Article

A thin film CdS-self-electro-optic effect device with identically contrasted (0.95/1) optical and electro-optical loops at 210 KULLRICH, B; BOUCHENAKI, C; ZIELINGER, J. P et al.Journal of applied physics. 1991, Vol 69, Num 10, pp 7357-7359, issn 0021-8979, 3 p.Article

Determination of the factors controlling the optical background absorption in nominally undoped and doped sillenitesMARQUET, H; TAPIERO, M; MERLE, J. C et al.Optical materials (Amsterdam). 1998, Vol 11, Num 1, pp 53-65, issn 0925-3467Article

Preparation, characterization, and bistable photoconduction properties of thin CdS layersBOUCHENAKI, C; ULLRICH, B; ZIELINGER, J. P et al.Journal of the Optical Society of America. B, Optical physics (Print). 1991, Vol 8, Num 3, pp 691-700, issn 0740-3224Article

Characterization of deep levels in Bi₁₂GeO₂₀ by photoinduced current transient spectroscopyBENJELLOUN, N; TAPIERO, M; ZIELINGER, J. P et al.Journal of applied physics. 1988, Vol 64, Num 8, pp 4013-4023, issn 0021-8979Article

Amorphous thin films of Zn₃P₂DEISS, J. L; ELI-DRISSI, B; ROBINO, M et al.Physica scripta (Print). 1988, Vol 37, Num 4, pp 587-592, issn 0031-8949Conference Paper

Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. II: Evaluation of various signal processing methodsBALLAND, J. C; ZIELINGER, J. P; TAPIERO, M et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 1, pp 71-87, issn 0022-3727Article

Investigation of deep levels in Pbl₂ by photoinduced current transient spectroscopyZIELINGER, J. P; POHORYLES, B; BALLAND, J. C et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 293-301, issn 0021-8979Article

Optical, photoelectrical, deep level and photorefractive characterization of CdTe:VZIELINGER, J. P; TAPIERO, M; GUELLIL, Z et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 16, Num 1-3, pp 273-278, issn 0921-5107Conference Paper

Photoconduction and thermo-optical hysteresis measurements in thin CdS filmsBOUCHENAKI, C; ULLRICH, B; ZIELINGER, J. P et al.Journal of crystal growth. 1990, Vol 101, Num 1-4, pp 797-801, issn 0022-0248Conference Paper

Photoinduced current transient spectroscopy in high-resistivity bulk materials: instrumentation and methodologyTAPIERO, M; BENJELLOUN, N; ZIELINGER, J. P et al.Journal of applied physics. 1988, Vol 64, Num 8, pp 4006-4012, issn 0021-8979Article

Properties of amorphous Zn₃P₂ = Propriétés de Zn₃P₂ amorpheDEISS, J. L; DRISSI, B. E; ROBINO, M et al.Journal of non-crystalline solids. 1987, Vol 97-98, pp 679-682, issn 0022-3093, 1Conference Paper