DETERMINATION OF RANDOM AND ALIGNED STOPPING POWERS FOR 80-300 KEV PROTONS IN SILICON BY BACK-SCATTERING MEASUREMENTS.CEMBALI F; ZIGNANI F.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 31; NO 3; PP. 169-173; BIBL. 10 REF.Article

SELF ANNEALING OF ION IMPLANTED SILICON: SUGGESTION FOR AN EXPERIMENTMERLI PG; ZIGNANI F.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 115-118; BIBL. 7 REF.Article

SELF ANNEALING OF ION IMPLANTED SILICON: SUGGESTION FOR AN EXPERIMENTMERLI PG; ZIGNANI F.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 57; NO 1-2; PP. 59-62; BIBL. 7 REF.Article

STUDY OF ELECTRICAL ACTIVITY RECOVERY STAGES IN PHOSPHORUS IMPLANTED SILICON.GALLONI R; PEDULLI L; ZIGNANI F et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 32; NO 3-4; PP. 223-227; BIBL. 14 REF.Article

SELF-ANNEALING OF ION-IMPLANTED SILICON: FIRST EXPERIMENTAL RESULTSCEMBALI GF; MERLI PG; ZIGNANI F et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 808-810; BIBL. 7 REF.Article

A TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION IMPLANTED SILICON.CEMBALI F; GALLONI R; ZIGNANI F et al.1974; J. PHYS. E; G.B.; DA. 1974; VOL. 7; NO 9; PP. 698-700; BIBL. 4 REF.Article

DIFFERENTIAL PULSE POLAROGRAPHIC DETERMINATION OF CHROMIUM IN GALLIUM ARSENIDEFERRI D; ZIGNANI F; BULDINI PL et al.1982; FRESENIUS Z. ANAL.; ISSN 0016-1152; DEU; DA. 1982; VOL. 313; NO 7; PP. 539-541; BIBL. 5 REF.Article

DIFFERENTIAL-PULSE POLAROGRAPHIC DETERMINATION OF TRACES OF TITANIUM IN SOLAR GRADE SILICONBULDINI PL; FERRI D; ZIGNANI F et al.1983; FRESENIUS ZEITSCHRIFT FUER ANALYTISCHE CHEMIE; ISSN 0016-1152; DEU; DA. 1983; VOL. 314; NO 7; PP. 660-664; ABS. GER; BIBL. 17 REF.Article

DOSE DEPENDENCE OF PENETRATION AND DAMAGE PROFILES OF P⁺-CHANNELED IONS IN SILICON SIMULATED BY COMPUTER.DESALVO A; ROSA R; ZIGNANI F et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 27; NO 1-2; PP. 89-95; BIBL. 16 REF.Article

ELECTRICAL ACTIVATION PROCESSES OF P⁺ IONS CHANNELED ALONG THE (110) AXIS ON SILICON: EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE.CEMBALI F; GALLONI R; ZIGNANI F et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 26; NO 3; PP. 161-171; BIBL. 11 REF.Article

RADIATION DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION: RANDOM AND ALIGNED IMPLANTS.CEMBALL F; DORI L; GALLONI R et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 111-117; BIBL. 16 REF.Article

SELF-ANNEALED ION IMPLANTED N⁺-P DIODESCEMBALI G; FINETTI M; MERLI PG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 1; PP. 62-64; BIBL. 4 REF.Article

EXPERIMENTAL AND COMPUTER ANALYSIS OF P⁺-ION PENETRATION TAILS IN A SIO₂-SI TWO-LAYER SYSTEMDESALVO A; GALLONI R; ROSA R et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 1994-1997; BIBL. 16 REF.Article

DOPING IN RADIATION DAMAGE PROFILES OF P⁺ IONS IMPLANTED IN SILICON ALONG THE (110) AXIS.CEMBALI F; GALLONI R; MOUSTY F et al.1974; RAD. EFFECTS.; G.B.; DA. 1974; VOL. 21; NO 4; PP. 255-264; BIBL. 28 REF.Article

SILICON SOLAR CELLS BY ION IMPLANTATION: E-BEAM AND SELF ANNEALINGCEMBALI GF; GALLONI R; LULLI G et al.1982; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 4/1982/STRESA; NLD/USA/GBR; DORDRECHT; BOSTON; LONDON: D. REIDEL PUBLISHING COMPANY; DA. 1982; PP. 1013-1017; BIBL. 6 REF.Conference Paper

EFFECT OF LASER IRRADIATION ON THE CHARACTERISTICS OF IMPLANTED LAYERS FOR SILICON SOLAR CELLSZIGNANI F; GALLONI R; PEDULLI L et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 213-221; BIBL. 9 REF.;_EUR-6376Conference Paper

INVESTIGATION IN ION IMPLANTATION AS A TECHNIQUE SUITABLE TO FABRICATE HIGH-EFFICIENCY SILICON SOLAR CELLSSONCINI G; ZIGNANI F.1981; ; LUX; LUXEMBOURG: OFFICE FOR OFFICIAL PUBLICATIONS OF THE EUROPEAN COMMUNITIES; DA. 1981; EUR/7094/CCE/195-76 ESI; 29 P.; 30 CM; BIBL. 17 REF.; ENERGYReport

Doping of amorphous silicon by potassium ion implantationDESALVO, A; ZIGNANI, F; GALLONI, R et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1993, Vol 67, Num 1, pp 131-142, issn 0958-6644Article

Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon filmsGALLONI, R; TSUO, Y. S; BAKER, D. W et al.Applied physics letters. 1990, Vol 56, Num 3, pp 241-243, issn 0003-6951Article

Homojunction and heterojunction silicon solar cells deposited by low temperature-high frequency plasma enhanced chemical vapour depositionPLA, J; CENTURIONI, E; SUMMONTE, C et al.Thin solid films. 2002, Vol 405, Num 1-2, pp 248-255, issn 0040-6090Article

Tailored emitter ion-implanted silicon solar cellsGALLONI, R; FAVERO, L; MAZZONE, A. M et al.Solar cells. 1984, Vol 11, Num 1, pp 69-85, issn 0379-6787Article

An optimized texturing process for silicon solar cell substrates using TMAHIENCINELLA, D; CENTURIONI, E; RIZZOLI, R et al.Solar energy materials and solar cells. 2005, Vol 87, Num 1-4, pp 725-732, issn 0927-0248, 8 p.Conference Paper

Spectral behavior of solar cells based on the junction near local defect layer designSUMMONTE, C; BIAVATI, M; GABILLI, E et al.Applied physics letters. 1993, Vol 63, Num 6, pp 785-787, issn 0003-6951Article

Boron an phosphorus doping of a-SiC:H thin films by means of ion implantationDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Thin solid films. 1995, Vol 265, Num 1-2, pp 113-118, issn 0040-6090Article

Ultrathin μc-Si films deposited by PECVDRIZZOLI, R; SUMMONTE, C; PLA, J et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 7-10, issn 0040-6090Conference Paper