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High-throughput identification of higher-K dielectrics from an amorphous N2-doped HfO2―TiO2 libraryCHANG, K.-S; LU, W.-C; WU, C.-Y et al.Journal of alloys and compounds. 2014, Vol 615, pp 386-389, issn 0925-8388, 4 p.Article

BaZrxTi2―xO5 thin films prepared by sol―gel methodDONGYUN GUO; YIPING GONG; CHUANBIN WANG et al.Journal of alloys and compounds. 2013, Vol 557, pp 34-39, issn 0925-8388, 6 p.Article

Influences of surface transition layer on switching time and coercive field of a ferroelectric thin filmLIAN CUI; QUAN XU; ZHIYOU HAN et al.Solid state sciences. 2013, Vol 16, pp 65-70, issn 1293-2558, 6 p.Article

Effect of Poly(4-vinylphenol) Concentration Increase on Deposition Rate of Dielectric Thin Film Fabrication by Using Electrohydrodynamic AtomizationADNAN ALI; YUN WOO LEE; KYUNG HYUN CHOI et al.Journal of electronic materials. 2013, Vol 42, Num 12, pp 3512-3518, issn 0361-5235, 7 p.Article

Low-Temperature Processing of PZT Thick Film by Seeding and High-Energy Ball Milling and Studies on Electrical PropertiesDUTTA, Soma; JEYASEELAN, A. Antony; SRUTHI, S et al.Journal of electronic materials. 2013, Vol 42, Num 12, pp 3524-3528, issn 0361-5235, 5 p.Article

Electric field gradients and spontaneous quadrupoles in elastic ferroelectricsARVANITAKIS, A. I; KALPAKIDES, V. K; HADJIGEORGIOU, E. P et al.Acta mechanica. 2011, Vol 218, Num 3-4, pp 269-294, issn 0001-5970, 26 p.Article

Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53Ti0.47O3 (PZT)/Pt and annealing effectKERKACHE, L; LAYADI, A; DOGHECHE, E et al.Journal of alloys and compounds. 2011, Vol 509, Num 20, pp 6072-6076, issn 0925-8388, 5 p.Article

Testing field and annealing temperature dependence of leakage properties in Bi3.25La0.75Ti3O12 thin filmsXIUMEI WU; SHUAI DONG; YA ZHAI et al.Thin solid films. 2011, Vol 519, Num 7, pp 2376-2380, issn 0040-6090, 5 p.Article

Theoretical study of ion doping and substrate effects in antiferroelectric thin filmsWESSELINOWA, Julia M; APOSTOLOV, A. T; TRIMPER, Steffen et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 7, pp 1658-1664, issn 0370-1972, 7 p.Article

Modeling of the Nanodomain Formation in the Heterostructure SPM Tip Electrode-Thin Ferroelectric Film-Semiconductor SubstrateMOROZOVSKA, A. N.Ferroelectrics (Print). 2011, Vol 418, pp 19-27, issn 0015-0193, 9 p.Conference Paper

A comparative study on the structural properties and electrical characteristics of thin HoTixOy, TmTixOy and YbTixOy dielectricsPAN, Tung-Ming; YEN, Li-Chen; WU, Xin-Chang et al.Semiconductor science and technology. 2010, Vol 25, Num 5, issn 0268-1242, 055015.1-055015.9Article

Correlation Radius in Thin Ferroelectric FilmsGLINCHUK, M. D; MOROZOVSKA, A. N; ELISEEV, E. A et al.Ferroelectrics (Print). 2010, Vol 400, pp 243-254, issn 0015-0193, 12 p.Article

The effect of stress on the dielectric constants of Bi4Ti3O12 filmsLIBEN LI; QINGDONG CHEN; JINGHAN YOU et al.Thin solid films. 2010, Vol 518, Num 20, pp 5649-5651, issn 0040-6090, 3 p.Conference Paper

Investigation of the crossover properties for the interaction parameters of a ferroelectric thin filmLU, Z. X; TENG, B. H; LU, X. H et al.Solid state communications. 2009, Vol 149, Num 29-30, pp 1176-1179, issn 0038-1098, 4 p.Article

Dielectric characterization of a ferroelectric film in the sub-GHz regionBAO, P; JACKSON, T. J; LANCASTER, M. J et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 18, issn 0022-3727, 185410.1-185410.5Article

Nanodomain faceting in ferroelectricsSCOTT, J. F; GRUVERMAN, A; WU, D et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 42, issn 0953-8984, 425222.1-425222.5Article

Characterization of ferroelectric/metal interface under the repeated polarization switchingNOZAKI, Shinichiro; ISHIDA, Kenji; MATSUMOTO, Arifumi et al.Thin solid films. 2008, Vol 516, Num 9, pp 2450-2453, issn 0040-6090, 4 p.Conference Paper

Voltage tunable Ba0.6Sr0.4TiO3 thin films and coplanar phase shiftersCHUNLIN FU; WEI CAI; HONGWEI CHEN et al.Thin solid films. 2008, Vol 516, Num 16, pp 5258-5261, issn 0040-6090, 4 p.Conference Paper

Enhanced dielectric characteristics of preferential (11 1)-oriented BZT thin films by manganese dopingJIE, W. J; ZHU, J; QIN, W. F et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 9, pp 2854-2857, issn 0022-3727, 4 p.Article

Proceedings of the Fifth Asian Meeting on Ferroelectrics (AMF-5), Part III of IV parts, Noda, Japan, September 3-7, 2006TAKENAKA, Tadashi; TSURUMI, Takaaki; KOJIMA, Seiji et al.Ferroelectrics (Print). 2007, Vol 357, issn 0015-0193, 330 p.Conference Proceedings

Transitions of barium strontium titanate ferroelectric ceramics for different strontium contentIOACHIM, A; TOACSAN, M. I; BANCIU, M. G et al.Thin solid films. 2007, Vol 515, Num 16, pp 6289-6293, issn 0040-6090, 5 p.Conference Paper

Direct patterning of crystallized BaTiO3 and TiO2films in aqueous solutionsWATANABE, Tomoaki; YOSHIMURA, Masahiro.Thin solid films. 2006, Vol 515, Num 4, pp 2696-2699, issn 0040-6090, 4 p.Article

Paraelectric thin films by nanoscale engineering of epitaxy and planar anisotropy for microwave phase shifter applications : Nanoscale ferroelectricsKORAY AKDOGAN, E; SIMON, William K; SAFARI, Ahmad et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 2006, Vol 53, Num 12, pp 2323-2332, issn 0885-3010, 10 p.Article

Transverse and longitudinal electrooptic properties of highly (100) oriented Pb(Zr,Ti)O3 films grown on glass substratesCHOI, Jong-Jin; PARK, Gun-Tae; KIM, Hyoun-Ee et al.Thin solid films. 2006, Vol 515, Num 4, pp 2437-2441, issn 0040-6090, 5 p.Article

Electrical properties of nanocrystalline HfTiO4 gate insulatorDOMARADZKI, J; KACZMAREK, D; BORKOWSKA, A et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 9, pp 2215-2218, issn 1862-6300, 4 p.Conference Paper

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