Approximate Formulas for Terminal Voltages on the Grounding ConductorSEKIOKA, Shozo; LORENTZOU, Maria I; HATZIARGYRIOU, Nikos D et al.IEEE transactions on electromagnetic compatibility. 2014, Vol 56, Num 2, pp 444-453, issn 0018-9375, 10 p.Article

Critical surface phase of α2(2 × 4) reconstructed zig-zag chains on InAs(001)XIANG GUO; XUN ZHOU; WANG, Ji-Hong et al.Thin solid films. 2014, Vol 562, pp 326-330, issn 0040-6090, 5 p.Article

Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wellsLINGMIN KONG; WEI SUN; ZHENGYUN WU et al.Thin solid films. 2014, Vol 562, pp 440-444, issn 0040-6090, 5 p.Article

Epitaxial growth of kesterite Cu₂ZnSnS₄ on a Si(001) substrate by thermal co-evaporationBYUNGHA SHIN; YU ZHU; GERSHON, Talia et al.Thin solid films. 2014, Vol 556, pp 9-12, issn 0040-6090, 4 p.Article

Influence of Hf on the structure, thermal stability and oxidation resistance of Ti-Al-N coatingsXU, Yu X; LI CHEN; FEI PEI et al.Thin solid films. 2014, Vol 565, pp 25-31, issn 0040-6090, 7 p.Article

Discrimination and detection limits of secondary phases in Cu₂ZnSnS₄ using X-ray diffraction and Raman spectroscopyBERG, Dominik M; ARASIMOWICZ, Monika; DJEMOUR, Rabie et al.Thin solid films. 2014, Vol 569, pp 113-123, issn 0040-6090, 11 p.Article

Structure and protective effect of AlN/Al multilayered coatings on NdFeB by magnetron sputteringJINLONG LI; YONGXIN WANG; LIPING WANG et al.Thin solid films. 2014, Vol 568, pp 87-93, issn 0040-6090, 7 p.Article

Surface photovoltage and modulation spectroscopy of E_ and E₊ transitions in GaNAs layersKUDRAWIEC, R; SITAREK, P; YU, K.-M et al.Thin solid films. 2014, Vol 567, pp 101-104, issn 0040-6090, 4 p.Article

3D heteroepitaxy of mismatched semiconductors on siliconFALUB, Claudiu V; KREILIGER, Thomas; ISELLA, Giovanni et al.Thin solid films. 2014, Vol 557, pp 42-49, issn 0040-6090, 8 p.Conference Paper

Alternating current operation of low-Mg-doped p-GaN Schottky diodesAOKI, Toshichika; KANEDA, Naoki; MISHIMA, Tomoyoshi et al.Thin solid films. 2014, Vol 557, pp 258-261, issn 0040-6090, 4 p.Conference Paper

Comparison of solar cells sensitised by CdTe/CdSe and CdSe/CdTe core/shell colloidal quantum dots with and without a CdS outer layerMCELROY, N; PAGE, R. C; ESPINBARRO-VALAZQUEZ, D et al.Thin solid films. 2014, Vol 560, pp 65-70, issn 0040-6090, 6 p.Conference Paper

Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealingTAKIMOTO, Takuma; TAKESHITA, Koji; NAKAMURA, Seiji et al.Thin solid films. 2014, Vol 557, pp 212-215, issn 0040-6090, 4 p.Conference Paper

Fabrication and characterization of ZnS: (Cu,Al) thin film phosphors on glass substrates by pulsed laser depositionJUNGHWAN KIM; HIRAMATSU, Hidenori; HOSONO, Hideo et al.Thin solid films. 2014, Vol 559, pp 18-22, issn 0040-6090, 5 p.Conference Paper

Free-charge carrier parameters of n-type, p-type and compensated InN: Mg determined by infrared spectroscopic ellipsometrySCHÖCHE, S; HOFMANN, T; DARAKCHIEVA, V et al.Thin solid films. 2014, Vol 571, pp 384-388, issn 0040-6090, 5 p., 3Conference Paper

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technologyLO NIGRO, Raffaella; BATTIATO, Sergio; GRECO, Giuseppe et al.Thin solid films. 2014, Vol 563, pp 50-55, issn 0040-6090, 6 p.Conference Paper

Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AINFENEBERG, Martin; ROMERO, María Fátima; NEUSCHL, Benjamin et al.Thin solid films. 2014, Vol 571, pp 502-505, issn 0040-6090, 4 p., 3Conference Paper

Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diodeKOTESWARA RAO PETA; PARK, Byung-Guon; LEE, Sang-Tae et al.Thin solid films. 2013, Vol 534, pp 603-608, issn 0040-6090, 6 p.Article

Dielectric and barrier thickness fluctuation scattering in Al₂O₃/AlGaN/GaN double heterojunction high-electron mobility transistorsDONG JI; YANWU LU; BING LIU et al.Thin solid films. 2013, Vol 534, pp 655-658, issn 0040-6090, 4 p.Article

Growth of N-polar GaN Using a CrN buffer layer on (0001) Al₂O₃ via plasma-assisted molecular beam epitaxyPARK, Jinsub; YAO, Takafumi.Thin solid films. 2013, Vol 531, pp 88-92, issn 0040-6090, 5 p.Article

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO₂ gate insulatorsSEOK, Ogyun; AHN, Woojin; HAN, Min-Koo et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025001.1-025001.6Article

Influence of Interference on Extraction Efficiency of Ultraviolet Vertical Light-Emitting DiodesSEUNG HWAN KIM; YOUNG HO SONG; SEONG RAN JEON et al.Journal of electronic materials. 2013, Vol 42, Num 8, pp 2435-2438, issn 0361-5235, 4 p.Article

Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxySTOLZ, A; SOLTANI, A; ABDALLAH, B et al.Thin solid films. 2013, Vol 534, pp 442-445, issn 0040-6090, 4 p.Article

Photoinduced Electron Transfer of ZnS―AglnS₂ Solid-Solution Semiconductor Nanoparticles: Emission Quenching and Photocatalytic Reactions Controlled by Electrostatic ForcesUEMATSU, Taro; DOKO, Akihisa; TORIMOTO, Tsukasa et al.Journal of physical chemistry. C. 2013, Vol 117, Num 30, pp 15667-15676, issn 1932-7447, 10 p.Article

Reactivity of the ZnS(1010) Surface to Small Organic Ligands by Density Functional TheoryWENMING SUN; CORNI, Stefano; DI FELICE, Rosa et al.Journal of physical chemistry. C. 2013, Vol 117, Num 31, pp 16034-16041, issn 1932-7447, 8 p.Article

Two-Photon Absorption of ZnS Quantum Dots: Interpreting the Nonlinear SpectrumVIVAS, Marcelo G; CURY, John F; SCHIAVON, Marco A et al.Journal of physical chemistry. C. 2013, Vol 117, Num 16, pp 8530-8535, issn 1932-7447, 6 p.Article