A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETsJIANQIANG LIN; XIN ZHAO; ANTONIADIS, Dimitri A et al.IEEE electron device letters. 2014, Vol 35, Num 4, pp 440-442, issn 0741-3106, 3 p.Article

Control of intersubband transitions in multiple quantum well systemsBATRA, Kriti; PRASAD, Vinod.Physica. E, low-dimentional systems and nanostructures. 2014, Vol 61, pp 171-179, issn 1386-9477, 9 p.Article

Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructureZHUKAVIN, R. Kh; BEKIN, N. A; SHASTIN, V. N et al.Physica. E, low-dimentional systems and nanostructures. 2014, Vol 57, pp 42-46, issn 1386-9477, 5 p.Article

Dynamics of stacking faults luminescence in GaN/Si nanowiresKORONA, K. P; RESZKA, A; SOBANSKA, M et al.Journal of luminescence. 2014, Vol 155, pp 293-297, issn 0022-2313, 5 p.Article

Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting I_ON= 482 μA/μm at I_OFF = 100 nA/μm and V_DD = 0.5 VSANGHOON LEE; HUANG, Cheng-Ying; COHEN-ELIAS, Doron et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 621-623, issn 0741-3106, 3 p.Article

Instability of structural defects generated by electron irradiation in GaInNAs quantum wellsPAVELESCU, E.-M; DUMITRESCU, M; GUINA, M et al.Journal of luminescence. 2014, Vol 154, pp 584-586, issn 0022-2313, 3 p.Article

Optical anisotropy and diamagnetic energy shifts in InP―GaP lateral quantum wellsSHIN, Y. H; YONGMIN KIM; SONG, J. D et al.Journal of luminescence. 2014, Vol 151, pp 244-246, issn 0022-2313, 3 p.Article

Semiconductor nanotube in the field of uniformly charged ring: Additional quantization in the form of one-dimensional hydrogen-type levelsHARUTYUNYAN, V. A.Physica. E, low-dimentional systems and nanostructures. 2014, Vol 57, pp 69-75, issn 1386-9477, 7 p.Article

Single Nanowire Light-Emitting Diodes Using Uniaxial and Coaxial InGaN/GaN Multiple Quantum Wells Synthesized by Metalorganic Chemical Vapor DepositionRA, Yong-Ho; NAVARNATHAVAN, Rangaswamy; YOO, Hee-Il et al.Nano letters (Print). 2014, Vol 14, Num 3, pp 1537-1545, issn 1530-6984, 9 p.Article

Single junction a-Si:H solar cell with a-Si:H/nc-Si:H/a-Si:H quantum wellsGUPTA, Ankur; VASHISTHA, Manvendra; SHARMA, Pratibha et al.Thin solid films. 2014, Vol 550, pp 643-648, issn 0040-6090, 6 p.Article

Thermoelectric properties of Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ and Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ quantum well systemsYELGEL, Övgü Ceyda; SRIVASTAVA, G. P.Philosophical magazine (2003. Print). 2014, Vol 94, Num 16-18, pp 2072-2099, issn 1478-6435, 28 p.Article

A charge-based capacitance model for AlGaAs/GaAs HEMTsKHANDELWAL, Sourabh; YIGLETU, F. M; INIGUEZ, B et al.Solid-state electronics. 2013, Vol 82, pp 38-40, issn 0038-1101, 3 p.Article

Characterization of reduced pressure chemical vapor deposited Si_0.8Ge_0.2/Si multi-layersSHIM, Kyu-Hwan; HYEON DEOK YANG; KIL, Yeon-Ho et al.Materials science in semiconductor processing. 2013, Vol 16, Num 1, pp 126-130, issn 1369-8001, 5 p.Article

Dynamics of intersubband transitions in triangular quantum wells due to static magnetic and laser fieldsDAHIYA, Brijender; PRASAD, Vinod; YAMASHITA, Koichi et al.Journal of luminescence. 2013, Vol 136, pp 240-248, issn 0022-2313, 9 p.Article

Electric field induced optical absorption and refractive index changes in a diluted magnetic quantum wellMERCILINE LEONORA, J; PETER, A. John; YOO, Changkyoo et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 47, pp 109-115, issn 1386-9477, 7 p.Article

Electron-related nonlinearities in GaAs―Ga_1―xAl_xAs double quantum wells under the effects of intense laser field and applied electric fieldMORA-RAMOS, M. E; DUQUE, C. A; KASAPOGLU, E et al.Journal of luminescence. 2013, Vol 135, pp 301-311, issn 0022-2313, 11 p.Article

Emission of double core infrared (CdSeTe)/ZnS quantum dots conjugated to antibodiesTORCHYNSKA, T. V.Journal of luminescence. 2013, Vol 137, pp 157-161, issn 0022-2313, 5 p.Article

GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color IntensitiesCHI, Kai-Lun; YEH, Shu-Ting; YEH, Yu-Hsiang et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 9, pp 2821-2826, issn 0018-9383, 6 p.Article

Nonlinear optical rectification associated to exciton states in asymmetric coupled double quantum wellsMIRANDA, Guillermo L; MORA-RAMOS, M. E; DUQUE, C. A et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 50, pp 108-115, issn 1386-9477, 8 p.Article

Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substratesBEAUR, L; BRETAGNON, T; GUILLET, T et al.Journal of luminescence. 2013, Vol 136, pp 355-357, issn 0022-2313, 3 p.Article

Semiconductor III―V lasers monolithically grown on Si substratesLEE, Andrew; HUIYUN LIU; SEEDS, Alwyn et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015027.1-015027.11Article

Spectra of circular and linear photogalvanic effect at inter-band excitation in In_0.15Ga_0.85As/Al_0.3Ga_0.7As multiple quantum wellsJINLING YU; YONGHAI CHEN; SHUYING CHENG et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 49, pp 92-96, issn 1386-9477, 5 p.Article

Study on the formation of PbSe nanoclusters at the interfaces of PbSe/ZnSe multiple quantum well structureARIVAZHAGAN, V; MANONMANI PARVATHI, M; RAJESH, S et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 53, pp 120-123, issn 1386-9477, 4 p.Article

Theoretical Analysis of n-Type Si-Based Resonant Tunneling Diodes Deposited on Either Partially or Fully Relaxed SiGe Buffer LayersWU, Kuan Y; CHENG, Hung H; HUNG, Kuan M et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 4, pp 1298-1301, issn 0018-9383, 4 p.Article

Well-thickness dependent electron transport effective mass and mobility in Sb-based quantum wellsSU, Sheng-Kai; LEE, Chien-Ping; VOSKOBOYNIKOV, O et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 48, pp 80-84, issn 1386-9477, 5 p.Article