Optical properties of nanocrystal-silicon thin films on silicon nanopillar arrays after thermal annealingYONGLEI LI; BO QIAN; CONG LI et al.Applied surface science. 2013, Vol 265, pp 324-328, issn 0169-4332, 5 p.Article

Effect of post heat treatment on microstructure and photocatalytic activities of TiO₂ nanoribbonsLIN ZHU; LIXIN CAO; GE SU et al.Applied surface science. 2011, Vol 257, Num 18, pp 7932-7937, issn 0169-4332, 6 p.Article

Evolution of SiGe nanoclusters and micro defects in the Si_1-xGe_x layer fabricated by two-step ion implantation and subsequent thermal annealingWENTING XU; HAILING TU; QINGHUA XIAO et al.Applied surface science. 2011, Vol 257, Num 22, pp 9260-9263, issn 0169-4332, 4 p.Article

Annealing effects on the structural and electrical transport properties of n-type Bi₂Te_2.7Se_0.3 thin films deposited by flash evaporationXINGKAI DUAN; YUEZHEN JIANG.Applied surface science. 2010, Vol 256, Num 24, pp 7365-7370, issn 0169-4332, 6 p.Article

Effect of annealing on the nanoscratch behavior of multilayer Si_0.8Ge_0.2/Si filmsDERMING LIAN.Applied surface science. 2010, Vol 257, Num 3, pp 911-916, issn 0169-4332, 6 p.Article

Band alignments at SrZrO₃/Ge(0 0 1) interface: Thermal annealing effectsYANG, M; DENG, W. S; CHEN, Q et al.Applied surface science. 2010, Vol 256, Num 15, pp 4850-4853, issn 0169-4332, 4 p.Conference Paper

Effect of annealing on the structural and optical properties of (311)B GaAsBi layersRODRIGO, J. F; SALES, D. L; SHAFI, M et al.Applied surface science. 2010, Vol 256, Num 18, pp 5688-5690, issn 0169-4332, 3 p.Conference Paper

Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arraysZHAO, X. Q; KIM, C. R; SHIN, B. C et al.Applied surface science. 2009, Vol 255, Num 11, pp 5861-5865, issn 0169-4332, 5 p.Article

On the optical properties of amorphous Ge-Ga-Se-KBr films prepared by pulsed laser depositionPAN, R. K; TAO, H. Z; LIN, C. G et al.Applied surface science. 2009, Vol 255, Num 11, pp 5952-5956, issn 0169-4332, 5 p.Article

Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copperFIGUEIREDO, V; ELANGOVAN, E; GONCALVES, G et al.Applied surface science. 2008, Vol 254, Num 13, pp 3949-3954, issn 0169-4332, 6 p.Article

Nanostructuring at the surface of low-energy lead-implanted silicon by electron beam annealingMARKWITZ, Andreas; DAVY, Perry; KENNEDY, John et al.Surface and interface analysis. 2008, Vol 40, Num 5, pp 931-934, issn 0142-2421, 4 p.Article

Morphology of alkali halide thin filmsGOLEK, F; MAZUR, P; RYSZKA, Z et al.Applied surface science. 2008, Vol 254, Num 14, pp 4292-4296, issn 0169-4332, 5 p.Conference Paper

Annealing influence on electrical transport mechanism of electroless deposited very thin Ag(W) filmsINBERG, A; RUZIN, A; TORCHINSKY, I et al.Thin solid films. 2006, Vol 496, Num 2, pp 515-519, issn 0040-6090, 5 p.Article

Nanoscale morphology of high-performance polymer solar cellsXIAONIU YANG; LOOS, Joachim; VEENSTRA, Sjoerd C et al.Nano letters (Print). 2005, Vol 5, Num 4, pp 579-583, issn 1530-6984, 5 p.Article

Optical and electrical properties of FeS₂ thin films with different thickness prepared by sulfurizing evaporated ironLIU, Y. H; MENG, L; ZHANG, L et al.Thin solid films. 2005, Vol 479, Num 1-2, pp 83-88, issn 0040-6090, 6 p.Article

Structural characteristics of SrTiO₃ thin films processed by rapid thermal annealingJIANG, S. W; ZHANG, Q. Y; LI, Y. R et al.Journal of crystal growth. 2005, Vol 274, Num 3-4, pp 500-505, issn 0022-0248, 6 p.Article

Structure and composition of thermally annealed Mo- and W-based CVD metal oxide thin filmsGESHEVA, K; CZIRAKI, A; IVANOVA, T et al.Thin solid films. 2005, Vol 492, Num 1-2, pp 322-326, issn 0040-6090, 5 p.Article

Heteroeptiaxial growth of Co_1-xFe_x alloy monolayers on W(110)PRATZER, M; ELMERS, H. J.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 150-156, issn 0022-0248, 7 p.Conference Paper

Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealingMCCANN, R; ROY, S. S; PAPAKONSTANTINOU, P et al.Thin solid films. 2005, Vol 482, Num 1-2, pp 34-40, issn 0040-6090, 7 p.Conference Paper

Preparation and characterization of CuInS₂ thin films completely converted from CuInSe₂ by sulfurizationLIU, C. P; TSENG, B. H.Thin solid films. 2005, Vol 480-81, pp 50-54, issn 0040-6090, 5 p.Conference Paper

Cu(In,Ga)(S,Se)₂ solar cells and modules by electrodepositionTAUNIER, S; SICX-KURDI, J; FAUVARQUE, J. P et al.Thin solid films. 2005, Vol 480-81, pp 526-531, issn 0040-6090, 6 p.Conference Paper

Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperatureLE DONNE, A; BINETTI, S; PIZZINI, S et al.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 1150-1153, issn 0925-9635, 4 p.Conference Paper

The influence of thermal annealing in presence of CdCl₂ on the electrophysical properties of the CdS/CdTe solar cellsCARAMAN, M; GASIN, P; VATAVU, S et al.Thin solid films. 2005, Vol 480-81, pp 254-258, issn 0040-6090, 5 p.Conference Paper

Analysis of texture evolution in equal channel angular extrusion of copper using a new flow fieldTOTH, Laszlo S; MASSION, Roxane Arruffat; GERMAIN, Lionel et al.Acta materialia. 2004, Vol 52, Num 7, pp 1885-1898, issn 1359-6454, 14 p.Article

Cold rolling behaviour of an austenitic Fe-30Mn-3Al-3Si twip-steel: the importance of deformation twinningVERCAMMEN, S; BLANPAIN, B; DE COOMAN, B. C et al.Acta materialia. 2004, Vol 52, Num 7, pp 2005-2012, issn 1359-6454, 8 p.Article