Análisis de las dependencias composicionales de las propiedades opticas de láminas semiconductoras amorfas del sistema As-S-Se = Analysis of the compositional dependencies of the optical properties of amorphous semiconducting films of the system As-S-SeGONZALEZ-LEAL, J. M; PRIETO-ALCON, R; ANGEL, J. A et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2004, Vol 43, Num 2, pp 357-362, issn 0366-3175, 6 p.Conference Paper

Er-doped hydrogenated amorphous silicon: structural and optical propertiesKIM, Mun-Jun; MEBRATU, G. K; SUNG, Joo-Yeon et al.Journal of non-crystalline solids. 2003, Vol 315, Num 3, pp 312-320, issn 0022-3093, 9 p.Article

IR characterization of a-C:H:N films sputtered in Ar/CH₄/N₂ plasmaLAZAR, Gabriel; LAZAR, Iuliana.Journal of non-crystalline solids. 2003, Vol 331, Num 1-3, pp 70-78, issn 0022-3093, 9 p.Article

Infrared reflectance spectra of semi-transparent SiO₂ rich films on silicate glasses: influence of the substrate and film thicknessGEOTTI-BIANCHINI, Franco; PREO, Martina; GUGLIELMI, Massimo et al.Journal of non-crystalline solids. 2003, Vol 321, Num 1-2, pp 110-119, issn 0022-3093, 10 p.Article

Optical study of Ge_xSb_20-xTe₈₀ chalcogenide filmsPAMUKCHIEVA, V; SZEKERES, A; TODOROVA, K et al.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 10-12, pp 837-838, issn 0957-4522, 2 p.Conference Paper

Revisiting the B-factor variation in a-SiC:H deposited by HWCVDSWAIN, Bibhu P; PATIL, Samadhan B; KUMBHAR, Alka et al.Thin solid films. 2003, Vol 430, Num 1-2, pp 186-188, issn 0040-6090, 3 p.Conference Paper

Photobleaching in amorphous GeS₂ thin filmsQIMING LIU; FUXI GAN.Materials letters (General ed.). 2002, Vol 53, Num 6, pp 411-414, issn 0167-577XArticle

On the doping mechanism of boron-doped hydrogenated amorphous silicon deposited by rf-co-sputteringDE LIMA, M. M; MARQUES, F. C.Journal of non-crystalline solids. 2002, Vol 299302, pp 605-609, issn 0022-3093, aConference Paper

Thickness effect of the photodarkening in amorphous chalcogenide filmsHAYASHI, Koji; MITSUISHI, Norihumi.Journal of non-crystalline solids. 2002, Vol 299302, pp 949-952, issn 0022-3093, bConference Paper

Optical properties of amorphous hydrogenated carbon thin filmsBOUZERAR, R; AMORY, C; ZEINERT, A et al.Journal of non-crystalline solids. 2001, Vol 281, Num 1-3, pp 171-180, issn 0022-3093Article

Electronic properties of erbium doped amorphous siliconKLEIDER, J. P; LONGEAUD, C; MEAUDRE, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 81, Num 1-3, pp 71-73, issn 0921-5107Conference Paper

A study of nanocrystalline CeO₂/PrO_x optoionic thin films : temperature and oxygen vacancy dependenceHARTRIDGE, A; GHANASHYAM KRISHNA, M; BHATTACHARYA, A. K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 57, Num 3, pp 173-178, issn 0921-5107Article

Effect of hydrogen dilution on the optical properties of hydrogenated amorphous silicon prepared by plasma depositionYAMAGUCHI, M; MORIGAKI, K.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1999, Vol 79, Num 3, pp 387-405, issn 1364-2812Article

The excitation mechanism of rare-earth ions in silicon nanocrystalsFRANZO, G; VINCIGUERRA, V; PRIOLO, F et al.Applied physics. A, Materials science & processing (Print). 1999, Vol 69, Num 1, pp 3-12, issn 0947-8396Article

Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devicesGIORGIS, F; PIRRI, C. F; VINEGONI, C et al.Journal of luminescence. 1998, Vol 80, Num 1-4, pp 423-427, issn 0022-2313Conference Paper

Cd_1-yMn_yS nanoparticles : absorption and photoluminescence propertiesLEVY, L; INGERT, D; FELTIN, N et al.Journal of crystal growth. 1998, Vol 184-85, pp 377-382, issn 0022-0248Conference Paper

Effect of microwave pulse on the optical properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance plasmaLEE, J.-H; JUNG, I.-C; PARK, S.-K et al.Japanese journal of applied physics. 1997, Vol 36, Num 11, pp 6867-6870, issn 0021-4922, 1Article

Temperature dependence of the optical absorption edge in amorphous Cd-As and Zn-P thin filmsJARZABEK, B; WESZKA, J; CISOWSKI, J et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1997, Vol 226-28, pp 1056-1059, issn 0921-5093Conference Paper

New technique of measurement of optical parameters of thin filmsHLVAVKA, J; OHLIDAL, I; VIZD'A, F et al.Thin solid films. 1996, Vol 279, Num 1-2, pp 209-212, issn 0040-6090Article

Photoluminescence and Raman studies of hydrogenated amorphous carbon films deposited by the rf plasma-enhanced CVD methodCHEN, C.-L; LUE, J.-T.Journal of non-crystalline solids. 1996, Vol 194, Num 1-2, pp 93-102, issn 0022-3093Article

Enhanced optical absorption in microcrystalline siliconBECK, N; MEIER, J; FRIC, J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 903-906, issn 0022-3093, 2Conference Paper

Photoluminescence of granular CdSe filmsARAI, T; ORII, T; ICHIKAWA, H et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1996, Vol 217-18, pp 159-163, issn 0921-5093Conference Paper

Mechanism of photo-stimulated processes in GeO_x filmsNAZARENKOV, F. A; STERLIGOV, V. A.Thin solid films. 1995, Vol 254, Num 1-2, pp 164-168, issn 0040-6090Article

Optical properties of As₅₀Se₅₀ semiconducting glass films of non-uniform thickness deposited by thermal evaporationRAMIREZ-MALO, J. B; CORRALES, C; MARQUEZ, E et al.Materials chemistry and physics. 1995, Vol 40, Num 1, pp 30-36, issn 0254-0584Article

Preparation and characterization of amorphous ZrF₄ thin filmsALMEIDA, R. M; MORAIS, P. J.Journal of non-crystalline solids. 1995, Vol 184, pp 93-97, issn 0022-3093Conference Paper