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Results 1 to 25 of 218

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Design and development of a piezoresistive pressure sensor on micromachined silicon for high-temperature applications and of a signal-conditioning electronic circuitCRESCINI, D; FERRARI, V; VERONA-RINATI, G et al.Microsystem technologies. 2003, Vol 9, Num 6-7, pp 431-435, issn 0946-7076, 5 p.Article

Selective and blanket liquid phase deposition of silicon dioxide on silicon nitride and tungsten silicideLEE, Ming-Kwei; SHIH, Chung-Min; YANG, Chi-Da et al.Semiconductor science and technology. 2003, Vol 18, Num 7, pp L45-L48, issn 0268-1242Article

Lateral growth control by thickness spatial modulation of amorphous silicon filmPECORA, A; MARIUCCI, L; PIPERNO, S et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 314-318, issn 0040-6090, 5 p.Conference Paper

Combinatorial hot-wire CVD approach to exploring thin-film Si materials and devicesQI WANG.Thin solid films. 2003, Vol 430, Num 1-2, pp 78-82, issn 0040-6090, 5 p.Conference Paper

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substratesMAXEY, C. D; CAMPLIN, J. P; GUILFOY, I. T et al.Journal of electronic materials. 2003, Vol 32, Num 7, pp 656-660, issn 0361-5235, 5 p.Conference Paper

Optical multilayers for ultra-narrow bandpass filters fabricated by PICVDBAUER, S; KLIPPE, L; ROTHHAAR, U et al.Thin solid films. 2003, Vol 442, Num 1-2, pp 189-193, issn 0040-6090, 5 p.Conference Paper

Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometryBALMER, R. S; MARTIN, T.Journal of crystal growth. 2003, Vol 248, pp 216-221, issn 0022-0248, 6 p.Conference Paper

Deposition of conductive films onto silicon, germanium, and SiO2/Si structures via pyrolysis of titanocene and zirconocene dichlorides in the presence of organosilicon compoundsMITTOV, O. N; PONOMAREVA, N. I; MITTOVA, I. Ya et al.Inorganic materials. 2002, Vol 38, Num 1, pp 34-38, issn 0020-1685Article

Monitoring epiready semiconductor wafersALLWOOD, D. A; COX, S; MASON, N. J et al.Thin solid films. 2002, Vol 412, Num 1-2, pp 76-83, issn 0040-6090Conference Paper

High-pressure crystallization of GaN for electronic applicationsGRZEGORY, I.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 44, pp 11055-11067, issn 0953-8984, 13 p.Conference Paper

Hydride vapor phase epitaxy growth of nitridesDWIKUSUMA, F; BABCOCK, S. E; KUECH, T. F et al.Vacuum science and technology : nitrides as seen by the technology 2002. 2002, pp 79-103, isbn 81-7736-198-8, 25 p.Book Chapter

NbNx thin film resistors for cryogenic applicationSCHICKE, M; SABON, P; SCHUSTER, K.-F et al.Thin solid films. 2001, Vol 384, Num 2, pp 294-297, issn 0040-6090Article

Room temperature SiO2 films deposited by multipolar ECR PECVDISAI, G; KOVALGIN, A; HOLLEMAN, J et al.Journal de physique. IV. 2001, Vol 83, pp Pr3.747-Pr3.753, issn 1155-4339Conference Paper

Surface modification of silicon related materials using a catalytic CVD system for ULSI applicationsIZUMI, Akira.Thin solid films. 2001, Vol 395, Num 1-2, pp 260-265, issn 0040-6090Conference Paper

An ultrahigh vacuum chemical vapor deposition system and its application to growth of nMOSFET and HBT structuresGUANGLI LUO; PEIYU ZHU; PEIYI CHEN et al.Vacuum. 2000, Vol 59, Num 4, pp 927-931, issn 0042-207XArticle

New approach to laser direct writing active and passive mesoscopic circuit elementsCHRISEY, D. B; PIQUE, A; FITZ-GERALD, J et al.Applied surface science. 2000, Vol 154-55, pp 593-600, issn 0169-4332Conference Paper

An electrophoretic deposition process for screening phosphor powders for color displaysCHANG, David C; TALBOT, Jan B; RAO, Ravi P et al.Journal of the Society for Information Display. 2000, Vol 8, Num 1, pp 51-56, issn 1071-0922Conference Paper

Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structureKITATANI, T; KONDOW, M; TANAKA, T et al.Journal of crystal growth. 2000, Vol 221, pp 491-495, issn 0022-0248Conference Paper

Structural and electrical properties of PbTiO3 thin films on conductive oxide LaNiO3 coated Si substrates prepared by sol-gel methodAIDONG LI; DI WU; CHUANZHEN GE et al.Thin solid films. 2000, Vol 375, Num 1-2, pp 220-223, issn 0040-6090Conference Paper

Chemical deposition of substance from gas phase in nonisothermal channelsKIM, H. Y; KIM, H. C; LEVDANSKY, V. V et al.International journal of heat and mass transfer. 2000, Vol 43, Num 20, pp 3877-3882, issn 0017-9310Article

Low-temperature deposition of highly textured aluminum nitride by direct current magnetron sputtering for applications in thin-film resonatorsNAIK, R. S; REIF, R; LUTSKY, J. J et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 2, pp 691-696, issn 0013-4651Article

Optimization of chemical bath-deposited cadmium sulfide on InP using a novel sulfur pretreatmentDAVIS, A; VACCARO, K; DAUPLAISE, H. M et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 3, pp 1046-1053, issn 0013-4651Article

Resistance-temperature characteristics of polycrystalline diamond/silicon wafer structureYONEKUBO, S.Sensors and materials. 1999, Vol 11, Num 1, pp 13-20, issn 0914-4935Article

Fabrication of boron nitride planar field emittersYOKOTA, Y; TAGAWA, S; SUGINO, T et al.Applied surface science. 1999, Vol 146, Num 1-4, pp 193-197, issn 0169-4332Conference Paper

Pulsed plasma CVD of fluorocarbon thin filmsLABELLE, C. B; LAU, K. K. S; GLEASON, K. K et al.IEEE 1999 international interconnect technology conference. 1999, pp 56-58, isbn 0-7803-5174-6Conference Paper

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