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MgTiO3 and Ba0.60Sr0.40Mg0.15Ti0.85O3 Composite Thin Films with Promising Dielectric Properties for Tunable ApplicationsLINA GAO; JIWEI ZHAI; XI YAO et al.Journal of the American Ceramic Society. 2008, Vol 91, Num 9, pp 3109-3112, issn 0002-7820, 4 p.Article

Effect of oxygen vacancies on nonlinear dielectric properties of SrTiO3 thin filmsLIU, X. Z; TAO, B. W; LI, Y. R et al.Journal of materials science. 2007, Vol 42, Num 1, pp 389-392, issn 0022-2461, 4 p.Article

Dielectric properties of a hydrated sulfonated poly(styrene-ethylene/butylenes-styrene) triblock copolymerBUTKEWITSCH, Stephen; SCHEINBEIM, Jerry.Applied surface science. 2006, Vol 252, Num 23, pp 8277-8286, issn 0169-4332, 10 p.Article

Dielectric properties of ZnNb2O6-TiO2 mixture thin filmsJIN YOUNG KIM; KUG SUN HONG; HYUN SUK JUNG et al.Journal of electroceramics. 2006, Vol 17, Num 2-4, pp 179-183, issn 1385-3449, 5 p.Conference Paper

Boron-retarded gate dielectric formed by dry oxidation of thermal nitrideWU, Yung-Hsien; KU, Chia-Lin; WANG, Jiun-Fang et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 1, pp F1-F6, issn 0013-4651Article

Temperature-dependent current transport in low-k inorganic dielectricsTRINGE, J. W; SOLOMON, J. S; DEVINE, R. A. B et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 5, pp F128-F131, issn 0013-4651Article

Structural and electrical properties of ultralow-k, disordered mesoporous silica films synthesized using nonionic templatesYAMADA, Kazuhiro; OKU, Yoshiaki; HATA, Nobuhiro et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 10, pp F248-F251, issn 0013-4651Article

Structure, morphology, and dielectric properties of nanocomposite oxide films formed by anodizing of sputter-deposited Ta-Al bilayersMOZALEV, Alexander; SAKAIRI, Masatoshi; TAKAHASHI, Hideaki et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 11, pp F257-F268, issn 0013-4651Article

Control of the interfacial layer thickness in hafnium oxide gate dielectric grown by PECVDCHOI, Kyu-Jeong; PARK, Jong-Bong; YOON, Soon-Gil et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 4, pp F75-F77, issn 0013-4651Article

Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layersSUN, C. L; CHEN, S. Y; YANG, M. Y et al.Materials chemistry and physics. 2003, Vol 78, Num 2, pp 412-415, issn 0254-0584, 4 p.Article

Properties of low-k copper barrier SiOCH film deposited by PECVD using hexamethyldisiloxane and N2OISHIMARU, Tomomi; SHIOYA, Yoshimi; IKAKURA, Hiroshi et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 5, pp F83-F89, issn 0013-4651Article

Roughness effects on the double-layer charge capacitance: the case of Helmholtz layer induced roughness attenuationPALASANTZAS, G; BACKX, G. M. E. A.Surface science. 2003, Vol 540, Num 2-3, pp 401-406, issn 0039-6028, 6 p.Article

Sol-gel synthesis and property studies of layered perovskite bismuth titanate thin filmsMADESWARAN, S; GIRIDHARAN, N. V; JAYAVEL, R et al.Materials chemistry and physics. 2003, Vol 80, Num 1, pp 23-28, issn 0254-0584, 6 p.Article

Structural, dielectric and optical properties of highly oriented lead zirconate thin films prepared by sol-gel processZHENFANG TANG; XINGUI TANG.Materials chemistry and physics. 2003, Vol 80, Num 1, pp 294-298, issn 0254-0584, 5 p.Article

Structural and electrical characteristics of low-dielectric constant porous hydrogen silsesquioxane for Cu metallizationWANG, J. H; CHEN, W. J; CHANG, T. C et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 8, pp F141-F146, issn 0013-4651Article

Residual stresses in Pb(Zr0.52Ti0.48)O3 thin films deposited by metal organic decompositionZHENG, X. J; YANG, Z. Y; ZHOU, Y. C et al.Scripta materialia. 2003, Vol 49, Num 1, pp 71-76, issn 1359-6462, 6 p.Article

Dielectric properties of RF-sputtered silicon nitride thin films with gold electrodesGOULD, R. D; AWAN, S. A.Thin solid films. 2003, Vol 433, Num 1-2, pp 309-314, issn 0040-6090, 6 p.Conference Paper

Influence of orientation, thickness and Nb doping on the structural, micro structural and electrical properties of PZT thin filmsCATTAN, E; REMIENS, D; HACCART, T et al.Piezoelectric materials for macro/micro systems 2003. 2003, pp 129-157, isbn 81-271-0020-X, 29 p.Book Chapter

Stress-induced leakage currents in thin silicon dioxide filmsPESIC, B; VRACAR, L. J; STOJADINOVIC, N et al.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 10-12, pp 805-807, issn 0957-4522, 3 p.Conference Paper

Characteristics of silicon-based BaxSr1-xTiO3 thin films prepared by a sol-gel methodREN, Tian-Ling; WANG, Xiao-Ning; LIU, Jian-She et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 9, pp 923-926, issn 0022-3727Article

Dielectric properties of molybdenum-containing diamond-like carbon films deposited using electron cyclotron resonance chemical vapor depositionHUANG, Q. F; YOON, S. F; RUSLI et al.Thin solid films. 2002, Vol 409, Num 2, pp 211-219, issn 0040-6090Article

Effect of substrate constraint on the stability and evolution of ferroelectric domain structures in thin filmsLI, Y. L; HU, S. Y; LIU, Z. K et al.Acta materialia. 2002, Vol 50, Num 2, pp 395-411, issn 1359-6454Article

Influence of doping and buffer layers on Pb(Zr, Ti)O3 thin films derived from inorganic zirconium precursorSHAO, Qi-Yue; LI, Ai-Dong; TANG, Yue-Feng et al.Materials chemistry and physics. 2002, Vol 75, Num 1-3, pp 207-210, issn 0254-0584Article

Material characterization of Cu-fluorinated silicate glass and Cu-organosilicate glass systems at elevated temperaturesJENG, J. S; CHEN, J. S; LIN, G et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 5, pp F43-F47, issn 0013-4651Article

Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using Zr(Oi-Pr)2(thd)2 and O2CHEN, H.-W; HUANG, T.-Y; LANDHEER, D et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 6, pp F49-F55, issn 0013-4651Article

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