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Results 1 to 25 of 3783

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Fast (tens to hundreds of eV) neutral beams for materials processing : Neutral Beam ProcessesECONOMOU, Demetre J.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 2, issn 0022-3727, 024001.1-024001.11Article

Development of ultra-hydrophilic and non-cytotoxic dental vinyl polysiloxane impression materials using a non-thermal atmospheric-pressure plasma jetKWON, Jae-Sung; YONG HEE KIM; EUN HA CHOI et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 19, issn 0022-3727, 195201.1-195201.5Article

Highly selective silicon nitride etching to Si and SiO2 for a gate sidewall spacer using a CF3I/O2/H2 neutral beamNAKAYAMA, Daiki; WADA, Akira; KUBOTA, Tomohiro et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 20, issn 0022-3727, 205203.1-205203.7Article

Molecular mechanism of plasma sterilization in solution with the reduced pH method: importance of permeation of HOO radicals into the cell membraneTAKAI, Eisuke; IKAWA, Satoshi; KITANO, Katsuhisa et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 29, issn 0022-3727, 295402.1-295402.10Article

Sub-Torr Chip-Scale Sputter-Ion Pump Based on a Penning Cell Array ArchitectureGREEN, Scott R; MALHOTRA, Ravish; GIANCHANDANI, Yogesh B et al.Journal of microelectromechanical systems. 2013, Vol 22, Num 2, pp 309-317, issn 1057-7157, 9 p.Article

Experimentally obtained values of electric field of an atmospheric pressure plasma jet impinging on a dielectric surfaceSOBOTA, A; GUAITELLA, O; GARCIA-CAUREL, E et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 37, issn 0022-3727, 372001.1-372001.5Article

Inactivation Effect of Argon Atmospheric Pressure Low-Temperature Plasma Jet on Murine Melanoma CellsSHI, Xing-Min; CHANG, Zheng-Shi; WU, Xi-Li et al.Plasma processes and polymers (Print). 2013, Vol 10, Num 9, pp 808-816, issn 1612-8850, 9 p.Article

Inactivation and Heme Degradation of Horseradish Peroxidase Induced by Discharge PlasmaZHIGANG KE; QING HUANG.Plasma processes and polymers (Print). 2013, Vol 10, Num 8, pp 731-739, issn 1612-8850, 9 p.Article

Computer Simulation Study of Gas Dynamics for Torches Operating at Atmosphere PressureISMAGILOV, Rinat R; KHAMIDULLIN, Ildar R; YANG, Kuo-Hui et al.Journal of nanoelectronics and optoelectronics. 2013, Vol 8, Num 1, pp 119-123, issn 1555-130X, 5 p.Article

Inactivation of Bacillus subtilis Spores in Water by a Direct-Current, Cold Atmospheric-Pressure Air Plasma MicrojetPENG SUN; HAIYAN WU; NA BAI et al.Plasma processes and polymers (Print). 2012, Vol 9, Num 2, pp 157-164, issn 1612-8850, 8 p.Article

Low-pressure nonequilibrium plasma for a top-down nanoprocess : THE 20TH EUROPEAN SECTIONAL CONFERENCE ON ATOMIC AND MOLECULAR PHYSICS OF IONIZED GASESMAKABE, Toshiaki; YAGISAWA, Takashi.Plasma sources science & technology (Print). 2011, Vol 20, Num 2, issn 0963-0252, 024011.1-024011.12Article

Separation of VUV/UV photons and reactive particles in the effluent of a He/O2 atmospheric pressure plasma jetSCHNEIDER, S; LACKMANN, J.-W; NARBERHAUS, F et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 29, issn 0022-3727, 295201.1-295201.9Article

Tailored ion energy distributions at an rf-biased plasma electrodeQIN, X. V; TING, Y.-H; WENDT, A. E et al.Plasma sources science & technology (Print). 2010, Vol 19, Num 6, issn 0963-0252, 065014.1-065014.8Article

Radially Inhomogeneous Spherical Dielectric Lens for Matching 100-ps Pulses Into Biological TargetsKUMAR, Prashanth; ALTUNC, Serhat; BAUM, Carl E et al.IEEE transactions on plasma science. 2010, Vol 38, Num 8, pp 1915-1927, issn 0093-3813, 13 p., 2Article

Caspase-3 Activation by Exponential Decay Nanosecond Pulsed Electric Fields on Tumor-Bearing BALB/c Nude Mice In VivoYAN MI; CHENGUO YAO; CHENGXIANG LI et al.IEEE transactions on plasma science. 2010, Vol 38, Num 8, pp 1963-1971, issn 0093-3813, 9 p., 2Article

Modification of peptide by surface-wave plasma processingMOTRESCU, Iuliana; OGINO, Akihisa; TANAKA, Shigeyasu et al.Thin solid films. 2010, Vol 518, Num 13, pp 3585-3589, issn 0040-6090, 5 p.Conference Paper

Energy distribution of bombarding ions in plasma etching of dielectricsBUZZI, F. L; TING, Y.-H; WENDT, A. E et al.Plasma sources science & technology (Print). 2009, Vol 18, Num 2, issn 0963-0252, 025009.1-025009.8Article

Influence of Low Temperature Plasma Treatment on the Properties of Tencel and Viscose Rayon FibersKAN, C. W; YUEN, C. W. M.IEEE transactions on plasma science. 2009, Vol 37, Num 8, pp 1615-1619, issn 0093-3813, 5 p., 2Article

Study of Low-Energy Doping Processes Using Continuous Anodic Oxidation Technique/Differential Hall Effect MeasurementsSHU QIN; PRUSSIN, Simon A; REYES, Jason et al.IEEE transactions on plasma science. 2009, Vol 37, Num 9, pp 1754-1759, issn 0093-3813, 6 p., 1Article

Reactive-ion etching of Sn-doped Ge2Sb2Te5in CHF3/O2 plasma for non-volatile phase-change memory deviceCHENG XU; BO LIU; ZHITANG SONG et al.Thin solid films. 2008, Vol 516, Num 21, pp 7871-7874, issn 0040-6090, 4 p.Article

Using Bode Plots to Access Intracellular CouplingGERBER, Howard L; JOSHI, Ravindra P; TSENG, Charles C et al.IEEE transactions on plasma science. 2008, Vol 36, Num 4, pp 1659-1664, issn 0093-3813, 6 p., 3Article

Plasma Gasification of Coal in Different OxidantsMATVEEV, Igor B; MESSERLE, Vladimir E; USTIMENKO, Alexander B et al.IEEE transactions on plasma science. 2008, Vol 36, Num 6, pp 2947-2954, issn 0093-3813, 8 p.Article

Etch characteristics of magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access memorySU RYUN MIN; HAN NA CHO; KEE WON KIM et al.Thin solid films. 2008, Vol 516, Num 11, pp 3507-3511, issn 0040-6090, 5 p.Conference Paper

Control of reactive plasmas for low-k/Cu integrationTATSUMI, Tetsuya.Applied surface science. 2007, Vol 253, Num 16, pp 6716-6737, issn 0169-4332, 22 p.Article

Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-ganLIM, Janis; ENG FONG CHOR; LENG SEOW TAN et al.Thin solid films. 2007, Vol 515, Num 10, pp 4471-4475, issn 0040-6090, 5 p.Conference Paper

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