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Results 1 to 25 of 8565

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Electron temperature control in low-pressure plasmas using a two-mesh-separation techniqueDHAYAL, M; FORDER, D; SHORT, R. D et al.Vacuum. 2003, Vol 70, Num 1, pp 67-71, issn 0042-207X, 5 p.Article

Measurements of the thermal gradient over EB-PVD thermal barrier coatingsDONGBO ZHANG; SHENGKAI GONG; HUIBIN XU et al.Vacuum. 2003, Vol 70, Num 1, pp 11-16, issn 0042-207X, 6 p.Article

Properties of implanted PET by W ion using MEVVA implantationYUGUANG, Wu; ZHANG TONGHE; LIU ANDONG et al.Vacuum. 2003, Vol 69, Num 4, pp 461-466, issn 0042-207X, 6 p.Article

Quantitative depth profiling of Al3Hf phase formed by Hf ions implantation into aluminumWEI MIAO; KUN TAO; XINGTAO LIU et al.Vacuum. 2003, Vol 69, Num 4, pp 467-472, issn 0042-207X, 6 p.Article

Synthesis and optical characterization of amorphous carbon nitride thin films by hot filament assisted RF plasma CVDKUNDOO, S; CHATTOPADHYAY, K. K; BANERJEE, A. N et al.Vacuum. 2003, Vol 69, Num 4, pp 495-500, issn 0042-207X, 6 p.Article

Treatment of inner surfaces of tubes by accelerated Cu and Mo ions during pulsed laser evaporationLOZOVAN, A. A.Vacuum. 2003, Vol 70, Num 4, pp 477-481, issn 0042-207X, 5 p.Article

A study of fundamental mechanisms of Si-B-N composite films deposited by duplex treatmentCHENGBIAO WANG; XIANG YU; JUNFENG YU et al.Vacuum. 2003, Vol 71, Num 4, pp 451-457, issn 0042-207X, 7 p.Article

Comparison of new PEEK® seals with traditional helicoflex for ultra high vacuum applicationsMURARI, A; BARZON, A.Vacuum. 2003, Vol 72, Num 3, pp 327-334, issn 0042-207X, 8 p.Article

Conduction and dielectric polarization in Se thin filmsDEGER, D; ULUTAS, K.Vacuum. 2003, Vol 72, Num 3, pp 307-312, issn 0042-207X, 6 p.Article

Dependence of field-emission threshold in diamond-like carbon films grown by various techniquesPANWAR, O. S; KUMAR, Sushil; RAJPUT, S. S et al.Vacuum. 2003, Vol 72, Num 2, pp 183-192, issn 0042-207X, 10 p.Article

Direct ion beam deposited carbon films and clustersKOPUSTINSKAS, V; MESKINIS, S; TAMULEVICIUS, S et al.Vacuum. 2003, Vol 72, Num 2, pp 193-198, issn 0042-207X, 6 p.Article

Effect of copper on boride layer of boronized ductile cast ironsSEN, U; SEN, S; YILMAZ, F et al.Vacuum. 2003, Vol 72, Num 2, pp 199-204, issn 0042-207X, 6 p.Article

Extraction and collection of laser photoionized neodymium ions measured by the multichannel Faraday cupsTAMURA, K.Vacuum. 2003, Vol 72, Num 1, pp 29-34, issn 0042-207X, 6 p.Article

Mathematical modeling of the electron beam formatting systems on the basis of field emission cathodes with various shapesEGOROV, N. V; VINOGRADOVA, E. M.Vacuum. 2003, Vol 72, Num 2, pp 103-111, issn 0042-207X, 9 p.Article

Optimization of PECVD silicon oxynitride films for anti-reflection coatingYONGJIN WANG; XINLI CHENG; ZHILANG LIN et al.Vacuum. 2003, Vol 72, Num 3, pp 345-349, issn 0042-207X, 5 p.Article

Photoconductivity in a-Se90Ge10-xInx thin filmsSINGH, Sangeeta; SHARMA, R. S; SHUKLA, R. K et al.Vacuum. 2003, Vol 72, Num 1, pp 1-9, issn 0042-207X, 9 p.Article

Preparation and microstructure of nanocrystalline Rb0.5Cs0.5Ag4I5 thin films on NaCl substratesSUN, Jia-Lin; TIAN, Guang-Yan; SHENG LIU et al.Vacuum. 2003, Vol 71, Num 4, pp 459-463, issn 0042-207X, 5 p.Article

Studies on the corrosion behavior of cerium-implanted zircaloy-4 with GAXRDPENG, D. Q; BAI, X. D; CHEN, X. W et al.Vacuum. 2003, Vol 72, Num 3, pp 313-319, issn 0042-207X, 7 p.Article

Substrate and annealing temperature effects on the optical and electrical properties of Ge20Te80 filmsMOHARRAM, A. H; ABDEL-RAHIM, F. M.Vacuum. 2003, Vol 72, Num 2, pp 113-121, issn 0042-207X, 9 p.Article

Thermal stability of magnetron sputtering amorphous carbon nitride filmsLI, J. J; ZHENG, W. T; JIN, Z. S et al.Vacuum. 2003, Vol 72, Num 3, pp 233-239, issn 0042-207X, 7 p.Article

Formation of CxNy films by high dose nitrogen implantation in the layered structuresKOMAROV, A. F; KOMAROV, F. F; MIRONOV, A. M et al.Vacuum. 2003, Vol 70, Num 2-3, pp 141-145, issn 0042-207X, 5 p.Conference Paper

Brazing of alumina ceramics modified by pulsed plasma beams combined with arc PVD treatmentPIEKOSZEWSKI, J; KRAJEWSKI, A; PROKERT, F et al.Vacuum. 2003, Vol 70, Num 2-3, pp 307-312, issn 0042-207X, 6 p.Conference Paper

Formation of polymeric layer during silicon etching in CF2Cl2 plasmaGRIGONIS, A; KNIZIKEVICIUS, R; RUTKUNIENE, Z et al.Vacuum. 2003, Vol 70, Num 2-3, pp 319-322, issn 0042-207X, 4 p.Conference Paper

Light emission from the cathode zone of DC glow dischargeWRONSKI, Z.Vacuum. 2003, Vol 70, Num 2-3, pp 339-345, issn 0042-207X, 7 p.Conference Paper

Energy loss effective charge for slow ions in electron gasMONETA, Marek; CZERBNIAK, Jerzy.Vacuum. 2003, Vol 70, Num 2-3, pp 359-364, issn 0042-207X, 6 p.Conference Paper

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