Density dependent electron effective mass probed by photoluminescence down to dilute electron density limitNOMURA, Shintaro; YAMAGUCHI, Masumi; AKAZAKI, Tatsushi et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 5, pp 1467-1469, issn 1386-9477, 3 p.Conference Paper

Photoluminescence investigation of ferromagnetic Ga_1―xMn_xN layers with GaN templates grown on sapphire (0 0 0 1) substratesYOON, I. T; HAM, M. H; MYOUNG, J. M et al.Applied surface science. 2009, Vol 255, Num 9, pp 4840-4843, issn 0169-4332, 4 p.Article

Recrystallization behavior of high-fluence N⁺-implanted GaAs studied by raman spectroscopyJIQING WANG; HUIBING MAO; ZIQIANG ZHU et al.Applied surface science. 2006, Vol 252, Num 6, pp 2186-2190, issn 0169-4332, 5 p.Article

Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disorderingZHAO, J; FENG, Z. C; WANG, Y. C et al.Surface & coatings technology. 2006, Vol 200, Num 10, pp 3245-3249, issn 0257-8972, 5 p.Conference Paper

Light emitting diodes : How it startedGRIMMEISS, Hermann G; ALLEN, John W.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 871-880, issn 0022-3093, 10 p.Conference Paper

Tunable statistics of multicolor photons emitted from semiconducting quantum dotsMIZRAHI, U; REGELMAN, D. V; GERSHONI, D et al.Journal of luminescence. 2003, Vol 102-03, pp 402-407, issn 0022-2313, 6 p.Conference Paper

Electromagnetically induced transparency and slow light with n-doped GaAsWANG, T; RAJAPAKSE, R; YELIN, S. F et al.Optics communications. 2007, Vol 272, Num 1, pp 154-160, issn 0030-4018, 7 p.Article

Luminescence properties of defects in ZnORESHCHIKOV, M. A; MORKOC, H; NEMETH, B et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 358-361, issn 0921-4526, 4 p.Conference Paper

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction techniqueZHANG, C. G; CHEN, W. D; BIAN, L. F et al.Applied surface science. 2006, Vol 252, Num 6, pp 2153-2158, issn 0169-4332, 6 p.Article

Polarisation control and emission enhancement of a quantum dot in ultra-high finesse microcavity pillarsTIMPSON, J. A; SANVITTO, D; DARAEI, A et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 500-503, issn 1386-9477, 4 p.Conference Paper

Giant optical anisotropy in single InAs quantum dotsFAVERO, I; CASSABOIS, G; DARSON, D et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 26, Num 1-4, pp 51-54, issn 1386-9477, 4 p.Conference Paper

Formation of thin GaN layer on Si(111) for fabrication of high-temperature metal field effect transistors (MESFETs)YOSHIDA, Seikoh; JIANG LI; TAKEHARA, Hironari et al.Journal of crystal growth. 2003, Vol 253, Num 1-4, pp 85-88, issn 0022-0248, 4 p.Article

Effects of growth temperature modulated by HCl flow rate on the surface and crystal qualities of thick GaN by HVPELUBING ZHAO; JIEJUN WU; KE XU et al.Applied surface science. 2009, Vol 255, Num 18, pp 8003-8009, issn 0169-4332, 7 p.Article

Metastability of defects, potential fluctuations, and percolation transition in GaAsKABIRAJ, D; GHOSH, Subhasis.Solid state communications. 2009, Vol 149, Num 43-44, pp 1884-1887, issn 0038-1098, 4 p.Article

Temperature dependent band gap shrinkage in GaN: Role of electron―phonon interactionSARKAR, Niladri; GHOSH, Subhasis.Solid state communications. 2009, Vol 149, Num 31-32, pp 1288-1291, issn 0038-1098, 4 p.Article

An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPETÖRMÄ, P. T; ALI, M; SVENSK, O et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4911-4915, issn 0921-4526, 5 p.Conference Paper

Intense photoluminescence from highly stacked quantum dash structure fabricated by strain-compensation techniqueAKAHANE, Kouichi; YAMAMOTO, Naokatsu; GOZU, Shin-Ichiro et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 1916-1919, issn 1386-9477, 4 p.Conference Paper

Optical evidence for Aharonov-Bohm effect in quantum tubesNOMURA, S; TSUMURA, K; MOHAN, P et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 5, pp 1081-1082, issn 1386-9477, 2 p.Conference Paper

Statistics of quantum dot exciton fine structure splittings and their polarization orientationsSEIDL, S; GERARDOT, B. D; DALGARNO, P. A et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2153-2155, issn 1386-9477, 3 p.Conference Paper

Bipolariton laser emission from a GaAs microcavityMOREIRA, L. M; COTTA, E. A; GONZALEZ, J. C et al.Solid state communications. 2007, Vol 143, Num 3, pp 166-170, issn 0038-1098, 5 p.Article

Synthesis and optical properties of single crystalline GaN nanorods with a rectangular cross-sectionXITIAN ZHANG; ZHUANG LIU; CHINGCHI WONG et al.Solid state communications. 2006, Vol 139, Num 8, pp 387-390, issn 0038-1098, 4 p.Article

Fine structure splitting and biexciton binding energy in single self-assembled InAs/AlAs quantum dotsSARKAR, D; VAN DER MEULEN, H. P; CALLEJA, J. M et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 111-114, issn 1386-9477, 4 p.Conference Paper

Dynamics of long-living excitons in tunable potential landscapesGÄRTNER, Andreas; SCHUH, Dieter; KOTTHAUS, Jörg P et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 195-198, issn 1386-9477, 4 p.Conference Paper

Electric-field control of electron-hole wave functions in a wide quantum wellYAMAGUCHI, Masumi; NOMURA, Shintaro; MIYAKOSHI, Kenji et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 34, Num 1-2, pp 300-303, issn 1386-9477, 4 p.Conference Paper

Photoluminescence studies in highly Te-doped Ga_1-xIn_xAs_ySb_1-y epitaxial layers grown on GaSb by liquid phase epitaxyDIAZ-REYES, J; HERRERA-PEREZ, J. L; GOMEZ-HERRERA, M. L et al.Applied surface science. 2004, Vol 238, Num 1-4, pp 400-404, issn 0169-4332, 5 p.Conference Paper