Catalyst-free MOCVD growth of aligned ZnO nanotip arrays on silicon substrate with controlled tip shapeYE, Z. Z; HUANG, J. Y; XU, W. Z et al.Solid state communications. 2007, Vol 141, Num 8, pp 464-466, issn 0038-1098, 3 p.Article

ZnO nanorods with different morphologies and their field emission propertiesYE, Z. Z; YANG, F; LU, Y. F et al.Solid state communications. 2007, Vol 142, Num 8, pp 425-428, issn 0038-1098, 4 p.Article

Growth kinetics study in halide chemical vapor deposition of SiCNIGAM, S; CHUNG, H. J; POLYAKOV, A. Y et al.Journal of crystal growth. 2005, Vol 284, Num 1-2, pp 112-122, issn 0022-0248, 11 p.Article

The mechanism of low temperature deposition of crystalline anatase by reactive DC magnetron sputteringBARNES, Mark C; KUMAR, Sunil; GREEN, Len et al.Surface & coatings technology. 2005, Vol 190, Num 2-3, pp 321-330, issn 0257-8972, 10 p.Article

Microstructural and compositional analysis of YBa₂Cu₃O_7-δ films grown by MOCVD before and after GCIB smoothingHATZISTERGOS, M. S; EFSTATHIADIS, H; REEVES, J. L et al.Physica. C. Superconductivity. 2004, Vol 405, Num 3-4, pp 179-186, issn 0921-4534, 8 p.Article

The mechanism of TiO₂ deposition by direct current magnetron reactive sputteringBARNES, Mark C; GERSON, Andrea R; KUMAR, Sunil et al.Thin solid films. 2004, Vol 446, Num 1, pp 29-36, issn 0040-6090, 8 p.Article

An accurate continuous level indication for precursor bubblersKANJOLIA, R. K; ODEDRA, R; KINGSLEY, A. J et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 236-240, issn 0022-0248, 5 p.Conference Paper

Radiation response behavior of high phosphorous doped step-index multimode optical fibers under low dose gamma irradiationPAUL, M.C; BOHRA, D; DHAR, A et al.Journal of non-crystalline solids. 2009, Vol 355, Num 28-30, pp 1496-1507, issn 0022-3093, 12 p.Article

Structural and electrical properties of SiO₂ films deposited on Si substrates from tetraethoxysilane/oxygen plasmasGOGHERO, D; GOULLET, A; LANDESMAN, J. P et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 369-376, issn 0038-1101, 8 p.Article

Growth of nanocrystalline TiO₂ films by MOCVD using a novel precursorSHALINI, K; CHANDRASEKARAN, S; SHIVASHANKAR, S. A et al.Journal of crystal growth. 2005, Vol 284, Num 3-4, pp 388-395, issn 0022-0248, 8 p.Article

Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowiresSHARMA, S; KAMINS, T. I; ISLAM, M. S et al.Journal of crystal growth. 2005, Vol 280, Num 3-4, pp 562-568, issn 0022-0248, 7 p.Article

Plasma-assisted SiC oxidation for power device fabricationMANDRACCI, P; FERRERO, S; PORRO, S et al.Applied surface science. 2004, Vol 238, Num 1-4, pp 336-340, issn 0169-4332, 5 p.Conference Paper

MOCVD and characterization of Hf-silicate thin films using HTB and TEMASKIM, Jaehyun; KIJUNG YONG.Journal of non-crystalline solids. 2007, Vol 353, Num 11-12, pp 1172-1176, issn 0022-3093, 5 p.Article

The deposition and characterization of BCN films by cathodic arc plasma evaporationTSAI, Pi-Chuen.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 5108-5113, issn 0257-8972, 6 p.Conference Paper

Charge compensation of composite materials using Os coating in X-ray photoelectron spectroscopyMORI, Y; TANEMURA, S.Applied surface science. 2004, Vol 229, Num 1-4, pp 242-248, issn 0169-4332, 7 p.Article

Trimethylindium transport studies: the effect of different bubbler designsSMITH, L. M; ODEDRA, R; KINGSLEY, A. J et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 37-41, issn 0022-0248, 5 p.Conference Paper

Controllable growth of individual, uniform carbon nanotubes by thermal chemical vapor depositionXIANBAO WANG; VOLODIN, Alexander; VAN HAESENDONCK, Chris et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 25, Num 4, pp 597-604, issn 1386-9477, 8 p.Article

Properties of Si_xN_y thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH₄/NH₃/Ar as diffusion barrier filmPHAM, Thuy T. T; LEE, J. H; KIM, Y. S et al.Surface & coatings technology. 2008, Vol 202, Num 22-23, pp 5617-5620, issn 0257-8972, 4 p.Conference Paper

Deposition of TiN films on various substrates from alkoxide solution by plasma-enhanced CVDSHIMADA, Shiro; TAKADA, Yoshikazu; TSUJINO, Jiro et al.Surface & coatings technology. 2005, Vol 199, Num 1, pp 72-76, issn 0257-8972, 5 p.Article

Design and development of artificial neural networks for depositing powders in coating treatmentJEAN, Ming-Der; LIU, Chyuan-Du; WANG, Jen-Ting et al.Applied surface science. 2005, Vol 245, Num 1-4, pp 290-303, issn 0169-4332, 14 p.Article

The formation mechanism of the coaxial carbon-metal nanowires in a chemical vapor deposition processWEIZHONG QIAN; WEI, F; LIU, T et al.Solid state communications. 2003, Vol 126, Num 7, pp 365-367, issn 0038-1098, 3 p.Article

Temperature effect on charge density of silicon nitride films deposited in SiH₄-NH₃-N₂ plasmaKIM, Byungwhan; SANG HEE KWON.Surface & coatings technology. 2008, Vol 202, Num 22-23, pp 5539-5542, issn 0257-8972, 4 p.Conference Paper

Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVDGRZEGORCZYK, A. P; MACHT, L; HAGEMAN, P. R et al.Journal of crystal growth. 2005, Vol 273, Num 3-4, pp 424-430, issn 0022-0248, 7 p.Article

MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowthYINGDA DONG; OKUNO, Yae L; MISHRA, Umesh K et al.Journal of crystal growth. 2004, Vol 260, Num 3-4, pp 316-321, issn 0022-0248, 6 p.Article

MOCVD growth of highly strained InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emissionKUO, H. C; YAO, H. H; CHANG, Y. H et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 538-542, issn 0022-0248, 5 p.Conference Paper