kw.\*:("81.60.Cp Gallium arsenide")
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Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solutionBEJI, L; SFAXI, L; ISMAIL, B et al.Microelectronics journal. 2003, Vol 34, Num 10, pp 969-974, issn 0959-8324, 6 p.Article
