Atomic-layer engineering of superconducting oxides : Yesterday, today, tomorrowBOZOVIC, Ivan.IEEE transactions on applied superconductivity. 2001, Vol 11, Num 1, pp 2686-2695, issn 1051-8223, 3Conference Paper

Production of double-sided large-area High-T_c wafers by molecular beam epitaxyNAITO, M; KARIMOTO, S; YAMAMOTO, H et al.IEEE transactions on applied superconductivity. 2001, Vol 11, Num 1, pp 3848-3851, issn 1051-8223, 3Conference Paper

Controllable growth of semiconductor nanometer structuresWANG, Z. G; WU, J.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 379-382, issn 0959-8324, 4 p.Conference Paper

The 17th International Conference on Molecular Beam EpitaxyAKIMOTO, Katzuhiro; SUEMASU, Takashi; OKUMURA, Hajime et al.Journal of crystal growth. 2013, Vol 378, issn 0022-0248, 649 p.Conference Proceedings

Mn incorporation in GaN thin layers grown by molecular-beam epitaxyKOCAN, M; MALINDRETOS, J; ROEVER, M et al.Semiconductor science and technology. 2006, Vol 21, Num 9, pp 1348-1353, issn 0268-1242, 6 p.Article

Palladium nano-clusters grown on prestructured HOPG substratesYUAN, Z; STEPHAN, R; HANF, M. C et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2011, Vol 63, Num 3, pp 401-406, issn 1434-6060, 6 p.Article

Surfactant mediated growth of MnSi_1.7 layers on (001)SiMOGILATENKO, A; FALKE, M; TEICHERT, S et al.Microelectronic engineering. 2002, Vol 64, Num 1-4, pp 211-218, issn 0167-9317Conference Paper

Optimization of RF plasma sources for the MBE growth of nitride and dilute nitride semiconductor materialGRANT, V. A; CAMPION, R. P; FOXON, C. T et al.Semiconductor science and technology. 2007, Vol 22, Num 2, pp 15-19, issn 0268-1242, 5 p.Article

Vertical-coupled SiGe double quantum dotsLI, C. B; YAMAHATA, G; XIA, J. S et al.Electronics letters. 2010, Vol 46, Num 13, pp 940-941, issn 0013-5194, 2 p.Article

Gas source MBE grown Al_0.52In_0.48P photovoltaic detectorLI, C; ZHANG, Y. G; GU, Y et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 501-503, issn 0022-0248, 3 p.Conference Paper

Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron SpectroscopyEL KAZZI, M; DELHAYE, G; GAILLARD, S et al.Journal de physique. IV. 2006, Vol 132, pp 87-90, issn 1155-4339, 4 p.Conference Paper

Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wiresCHAO JIANG; MURANAKA, Tsutomu; HASEGAWA, Hideki et al.Microelectronic engineering. 2002, Vol 63, Num 1-3, pp 293-299, issn 0167-9317Conference Paper

Mbe growth and interface formation of compound semiconductor heterostructures for optoelectronicsTOURNIDE, Eric; TRAMPERT, Achim.Physica status solidi. B. Basic research. 2007, Vol 244, Num 8, pp 2683-2696, issn 0370-1972, 14 p.Article

Area selective growth of GaAs by migration-enhanced epitaxyHORIKOSHI, Y; UEHARA, T; IWAI, T et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 8, pp 2697-2706, issn 0370-1972, 10 p.Article

A-plane (1120) InN growth on nitridated R-plane (1012) sapphire by ECR-MBEKUMAGAI, Y; TSUYUGUCHI, A; NAOI, H et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 7, pp 1468-1471, issn 0370-1972, 4 p.Conference Paper

Scanning tunneling microscopy studies of topological insulatorsPENG CHENG; TONG ZHANG; KE HE et al.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 44, Num 5, pp 912-916, issn 1386-9477, 5 p.Article

Phosphorus doping of silicon at substrate temperatures above 600°CTHOMPSON, P. E; JERNIGAN, G. G; SIMONS, D et al.Thin solid films. 2010, Vol 518, issn 0040-6090, S270-S272, SUP1Conference Paper

Statistical methods of determining the QD dimensions based on atomic force microscopy measurementsPIOTROWSKI, T; KACZMARCZYK, M.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S347-S350, SUP1Conference Paper

Observation of change in critical thickness of in droplet formation on GaAs(100)LEE, J. H; WANG, Zh. M; SALAMO, G. J et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 17, issn 0953-8984, 176223.1-176223.8Article

Morphological evolution of Ge islands on Au-patterned SiROBINSON, J. T; LIDDLE, J. A; MINOR, A et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 518-521, issn 0022-0248, 4 p.Conference Paper

Formation of epitaxial strontium oxide and silicate on silicon (001)DELHAYE, G; EL KAZZI, M; GAILLARD, S et al.Journal de physique. IV. 2006, Vol 132, pp 285-289, issn 1155-4339, 5 p.Conference Paper

The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)WASILEWSKI, Z. R; BERESFORD, R.Journal of crystal growth. 2009, Vol 311, Num 7, issn 0022-0248, 639 p.Conference Proceedings

Thermal imaging of wafer temperature in MBE using a digital cameraJACKSON, A. W; GOSSARD, A. C.Journal of crystal growth. 2007, Vol 301-302, pp 105-108, issn 0022-0248, 4 p.Conference Paper

Fabrication of GaN dot structures on Si substrates by droplet epitaxyKONDO, Toshiyuki; SAITOH, Koji; YAMAMOTO, Yo et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1700-1703, issn 1862-6300, 4 p.Conference Paper

Tuning the growth mode in organic molecular-beam epitaxySASSELLA, A; CAMPIONE, M; MORET, M et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 20, pp 201311.1-201311.4, issn 1098-0121Article