ECR Plasma Etching of GaAs in CCl₂F₂/Ar dischargeSINGH, L. S. S; TIWARY, K. P; KHAN, M. N et al.SPIE proceedings series. 2002, pp 1386-1389, isbn 0-8194-4500-2, 2VolConference Paper

Etching characteristics of Bi_4-xLa_xTi₃O₁₂ (BLT) in inductively coupled CF₄/Ar plasmaKIM, Dong-Pyo; KIM, Chang-Il.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 912-917, issn 0167-9317, 6 p.Conference Paper

ASM Materials Solutions ConferenceSurface engineering. 2001, Vol 17, Num 5, pp 413-429, issn 0267-0844Conference Proceedings

Improved anisotropic deep etching in KOH-solutions to fabricate highly specular surfacesMIHALCEA, C; HÖLZ, A; KUWAHARA, M et al.Microelectronic engineering. 2001, Vol 57-58, pp 781-786, issn 0167-9317Conference Paper

Hydrogen penetration into silicon during wet-chemical etchingWEBER, J; KNACK, S; FEKLISOVA, O. V et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 320-326, issn 0167-9317, 7 p.Conference Paper

Plasma etching of DLC films for microfluidic channelsMASSI, M; OCAMPO, J. M. J; MACIEL, H. S et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 635-638, issn 0959-8324, 4 p.Conference Paper

Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxialle stressed silicon plateSTARKOV, V; GAVRILIN, E; VYATKIN, A et al.SPIE proceedings series. 2004, pp 225-234, isbn 0-8194-5324-2, 10 p.Conference Paper

Cleaning of nanopillar templates for nanoparticle collection using PDMSMERZSCH, S; WASISTO, H. S; WAAG, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8068, issn 0277-786X, isbn 978-0-8194-8657-8, 806819.1-806819.8Conference Paper

Single spin silicon etching behavior analysis by quality engineering (Taguchi method)ITOH, Shinobu; TAKANO, Masaki; KOZUKI, Yasushi et al.Proceedings - Electrochemical Society. 2004, pp 357-366, issn 0161-6374, isbn 1-56677-418-7, 10 p.Conference Paper

Vertically aligned silicon nanowires fabricated by electroless etching of silicon waferHUTAGALUNG, Sabar D; TAN, Agnes S. Y; TAN, Ruo Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7743, issn 0277-786X, isbn 978-0-8194-8233-4 0-8194-8233-1, 1Vol, 774305.1-774305.7Conference Paper

Ultra-thin semiconductor membrane nanotechnology based on surface charge lithographyTIGINYANU, Ion; POPA, Veaceslav; STEVENS-KALCEFF, Marion A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8068, issn 0277-786X, isbn 978-0-8194-8657-8, 806814.1-806814.6Conference Paper

Investigation of a nucleation stage of macropore formation in p-type siliconSTARKOV, V. V; GAVRILIN, E. Yu; VYATKIN, A. F et al.SPIE proceedings series. 2004, pp 219-224, isbn 0-8194-5324-2, 6 p.Conference Paper

Some investigations on the anisotropy of the chemical etching of (hk0) and (hh1) silicon plates in a NaOH 35% solution. Part III: Determination of a database for the simulator TENSOSIM and prediction of 2D etching shapesTELLIER, C. R; HODEBOURG, C; LEBLOIS, T. G et al.Active and passive electronic components. 2003, Vol 26, Num 2, pp 95-109, issn 0882-7516, 15 p.Article

Monte Carlo simulation studies of sidewall roughening during reactive ion etchingPANI, S. K; TJIPTOHARSONO, F; WONG, C. C et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 2, pp 401-407, issn 0947-8396, 7 p.Article

Etch characteristics of CoZrNb and CoTb magnetic thin films in a high density plasmaSHIN, Byul; YOUNG SOO SONG; SANG JIN PARK et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 8, pp 1644-1647, issn 0031-8965, 4 p.Conference Paper

Mécanismes d'éjection de particules par laser impulsionnel = Mechanisms of particle ejection using a pulsed laserGROJO, D; CROS, A; DELAPORTE, Ph et al.Journal de physique. IV. 2006, Vol 138, pp 191-201, issn 1155-4339, 11 p.Conference Paper

Low pressure plasma etching of silicon carbideKIM, B; KIM, S; LEE, B. T et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 4, pp 793-797, issn 0947-8396, 5 p.Article

Dos and don'ts in characterizing and cleaning optical surfacesBENNETT, Jean M.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 596518.1-596518.10, issn 0277-786X, isbn 0-8194-5983-6, 1VolConference Paper

Microengraving of a potassium dihydrogen phosphate crystal by laser ablation techniqueMOAGAR-POLADIAN, G; ULIERU, D; SANDU, C et al.SPIE proceedings series. 2004, pp 375-380, isbn 0-8194-5378-1, 6 p.Conference Paper

Optimized deep wet etching of borosilicate glass through Cr-Au-resist maskILIE, Mihaela; FOGLIETTI, Vittorio; CIANCI, Elena et al.SPIE proceedings series. 2003, pp 318-322, isbn 0-8194-5100-2, 5 p.Conference Paper

Allowable substrate bias for the etching of n-GaN in photo-enhanced electrochemical etchingSEO, J. W; OH, C. S; YANG, J. W et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 1, pp 403-406, issn 0031-8965Conference Paper

Some investigations on the anisotropy of the chemical etching of (hk0) and (hhl) silicon plates in a NaOH 35% solution. Part I: 2D etching shapesHODEBOURG, C. A; TELLIER, C. R.Active and passive electronic components. 2001, Vol 24, Num 1, pp 31-56, issn 0882-7516Article

Etch pits on (hk0) and (hhℓ) silicon surfaces. Experimental shapes and simulationsTELLIER, C. R.EPJ. Applied physics (Print). 2009, Vol 47, Num 3, issn 1286-0042, 30303.p1-30303.p10Article

High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growthLOUBET, Nicolas; TALBOT, Alexandre; DUTARTRE, Didier et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S149-S152Conference Paper

Tuning surface energies with nanopatterned substratesSELHUBER, Christine; BLÜMMEL, Jacques; CZERWINSKI, Fabian et al.Nano letters (Print). 2006, Vol 6, Num 2, pp 267-270, issn 1530-6984, 4 p.Article