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Structural characterization of pure and doped GaSe by nonlinear optical methodANDREEV, Yu. M; KOKH, K. A; LANSKII, G. V et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 1164-1166, issn 0022-0248, 3 p.Conference Paper

Growth and characterisation of a novel polymer of manganese(II) nicotinate single crystalPRASANNA, S; BIJINI, B. R; RAJENDRA BABU, K et al.Journal of crystal growth. 2011, Vol 333, Num 1, pp 36-39, issn 0022-0248, 4 p.Article

The effects of zinc on the characteristics of (Zn,Ca)TiO3:Pr3+ phosphorsSUNG MOOK CHUNG; KANG, Seung-Youl; SHIN, Jae-Heon et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 94-97, issn 0022-0248, 4 p.Conference Paper

Preparation of large area three-dimensionally ordered macroporous thin films by confined infiltration and crystallisationMCLACHLAN, M. A; BARRON, C. C. A; JOHNSON, N. P et al.Journal of crystal growth. 2008, Vol 310, Num 10, pp 2644-2648, issn 0022-0248, 5 p.Article

Synthesis, structural and vibrational properties of microcrystalline RbNd(MoO4)2ATUCHIN, V. V; CHIMITOVA, O. D; GAVRILOVA, T. A et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 683-686, issn 0022-0248, 4 p.Conference Paper

Effect of rapid thermal annealing on photoluminescence and crystal structures of CdZnO filmsRUIJIE ZHANG; PEILIANG CHEN; YUANYUAN ZHANG et al.Journal of crystal growth. 2010, Vol 312, Num 12-13, pp 1908-1911, issn 0022-0248, 4 p.Article

Behavior of trench surface by H2 annealing for reliable trench gate oxideKIM, Sang-Gi; TAE MOON ROH; KIM, Jongdae et al.Journal of crystal growth. 2003, Vol 255, Num 1-2, pp 123-129, issn 0022-0248, 7 p.Article

Influence of pulling rate on multicrystalline silicon ingots' propertiesAUTRUFFE, Antoine; SØNDENA, Rune; VINES, Lasse et al.Journal of crystal growth. 2014, Vol 386, pp 199-203, issn 0022-0248, 5 p.Article

Single crystal growth and structure refinement of hollandite-type K1.98Fe1.98Sn6.02O16FUJIMOTO, Kenjiro; TAKAMORI, Kenji; YAMAGUCHI, Yuki et al.Journal of crystal growth. 2014, Vol 390, pp 88-91, issn 0022-0248, 4 p.Article

Spontaneous symmetry breaking during formation of ZnO nanocrystalsYAN ZHOU; JUNYAN ZHANG; JIANGONG LI et al.Journal of crystal growth. 2011, Vol 324, Num 1, pp 225-228, issn 0022-0248, 4 p.Article

Isoprenoid-chained lipid β-XylOC16+4-A novel molecule for in meso membrane protein crystallizationBORSHCHEVSKIY, Valentin; MOISEEVA, Ekaterina; KUKLIN, Alexander et al.Journal of crystal growth. 2010, Vol 312, Num 22, pp 3326-3330, issn 0022-0248, 5 p.Article

Comparison of cerium-doped Lu2Si2O7 and Lu2SiO5 scintillatorsCHENGFENG YAN; GUANGJUN ZHAO; YIN HANG et al.Journal of crystal growth. 2005, Vol 281, Num 2-4, pp 411-415, issn 0022-0248, 5 p.Article

Crystal structural premises to epitaxial contacts for a series of mercury-containing compoundsATUCHIN, V. V; BORISOV, S. V; MAGARILL, S. A et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 1125-1128, issn 0022-0248, 4 p.Conference Paper

Synthesis and effect of Sr substitution on fluorescence of new Ba2-xSrxZnS3: Eu2+ red phosphor : Considerable enhancement of emission intensityLEE, Chi-Woo; PETRYKIN, Valery; KAKIHANA, Masato et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 647-650, issn 0022-0248, 4 p.Conference Paper

Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallizationISHIHARA, Ryoichi; RANA, Vikas; MING HE et al.Solid-state electronics. 2008, Vol 52, Num 3, pp 353-358, issn 0038-1101, 6 p.Conference Paper

Structural and optical properties of polar and non-polar ZnO films grown by MOVPEZHU, J. J; AALTONEN, T; VENKATACHALAPATHY, V et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5020-5024, issn 0022-0248, 5 p.Conference Paper

Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on (001) ceriaSOLOVYOV, Vyacheslav F; WU, Li-jun; RUPICH, Martin W et al.Journal of crystal growth. 2014, Vol 408, pp 107-111, issn 0022-0248, 5 p.Article

Mechanism of specific influence of L-Glutamic acid on the shape of L-Valine crystalsYOSHIURA, Hiromu; NAGANO, Hiroshi; HIRASAWA, Izumi et al.Journal of crystal growth. 2013, Vol 363, pp 55-60, issn 0022-0248, 6 p.Article

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilaneVINCENT, B; LOO, R; VANDERVORST, W et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2671-2676, issn 0022-0248, 6 p.Article

Crystal growth of K2UO4 and Na4UO5 using hydroxide fluxesROOF, Irina P; SMITH, Mark D; ZUR LOYE, H.-C et al.Journal of crystal growth. 2010, Vol 312, Num 8, pp 1240-1243, issn 0022-0248, 4 p.Conference Paper

Growth of different morphological features of micro and nanocrystalline manganese sulfide via solvothermal processBISWAS, Subhajit; KAR, Soumitra; CHAUDHURI, Subhadra et al.Journal of crystal growth. 2007, Vol 299, Num 1, pp 94-102, issn 0022-0248, 9 p.Article

Valence electron structure analysis of epitaxial growth of diamond (100) film on Si and c-BN substrateZHANG, Xiao-Jun; ZHANG, Jian-Min; XU, Ke-Wei et al.Journal of crystal growth. 2006, Vol 290, Num 1, pp 229-234, issn 0022-0248, 6 p.Article

New chemical analogs of triglycine sulfateGHAZARYAN, V. V; FLECK, M; PETROSYAN, A. M et al.Journal of crystal growth. 2014, Vol 401, pp 857-862, issn 0022-0248, 6 p.Conference Paper

Graphene films grown at low substrate temperature and the growth model by using MBE techniqueLIN, Meng-Yu; GUO, Wei-Ching; WU, Meng-Hsun et al.Journal of crystal growth. 2013, Vol 378, pp 333-336, issn 0022-0248, 4 p.Conference Paper

Molecular beam epitaxy of LiMnAsNOVAK, V; CUKR, M; SOBAN, Z et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 348-350, issn 0022-0248, 3 p.Conference Paper

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