Shape evolution of low density InAs quantum dots in the partial capping process by using As2 sourceOHKOUCHI, Shunsuke; KUMAGAI, Naoto; WATANABE, Katsuyuki et al.Journal of crystal growth. 2013, Vol 378, pp 549-552, issn 0022-0248, 4 p.Conference Paper

New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength rangeOHKOUCHI, S; KUMAGAI, N; SHIRANE, M et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 250-253, issn 0022-0248, 4 p.Conference Paper

Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN filmsCORDIER, Yvon; FRAYSSINET, Eric; VENNEGUES, Philippe et al.Journal of crystal growth. 2014, Vol 398, pp 23-32, issn 0022-0248, 10 p.Article

Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistorsAKABORI, Masashi; MURAKAMI, Tatsuya; YAMADA, Syoji et al.Journal of crystal growth. 2012, Vol 345, Num 1, pp 22-26, issn 0022-0248, 5 p.Article

Effect of mask material on selective growth of GaN by RF-MBENAGAE, Yuki; IWATSUKI, Takenori; SHIRAI, Yuya et al.Journal of crystal growth. 2011, Vol 324, Num 1, pp 88-92, issn 0022-0248, 5 p.Article

Control of active nitrogen species used for PA-MBE growth of group III nitrides on SiOHACHI, Tadashi; YAMABE, Nobuhiko; YAMAMOTO, Yuka et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 468-473, issn 0022-0248, 6 p.Conference Paper

Thermochemical analysis of MgB₂ synthesis by molecular-beam epitaxyJIHOON KIM; SINGH, R. K; ROWELL, J. M et al.Journal of crystal growth. 2004, Vol 270, Num 1-2, pp 107-112, issn 0022-0248, 6 p.Article

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy : The critical role of growth temperatureCORDIER, Y; BARON, N; CHENOT, S et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2002-2005, issn 0022-0248, 4 p.Conference Paper

Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxyJIE ZHAO; YIPING ZENG; CHAO LIU et al.Journal of crystal growth. 2010, Vol 312, Num 9, pp 1491-1495, issn 0022-0248, 5 p.Article

Role of buried cracks in mitigating strain in crack free GaN grown on Si (1 1 1) employing AlN interlayer schemesTANG, H; BARIBEAU, J.-M; AERS, G. C et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 413-417, issn 0022-0248, 5 p.Conference Paper

Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxyCORDIER, Y; MORENO, J.-C; BARON, N et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2683-2688, issn 0022-0248, 6 p.Article