Vapor pressure of germanium precursorsPANGRAC, J; FULEM, M; HULICIUS, E et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4720-4723, issn 0022-0248, 4 p.Conference Paper

Optical and electrical characterization of OMVPE-grown AlGaAsSb epitaxial layers on InP substratesRAO, T. S; SO, M. G; JIANG, W. Y et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 532-535, issn 0022-0248, 4 p.Conference Paper

Emissivity-correcting near-UV pyrometry for group-III nitride OMVPECREIGHTON, J. R; KOLESKE, D. D; MITCHELL, C. C et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 572-576, issn 0022-0248, 5 p.Conference Paper

Characterisation of GaAsN layers grown by MOVPEPELOSI, Claudio; ATTOLINI, Giovanni; BOSI, Matteo et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 625-628, issn 0022-0248, 4 p.Conference Paper

Novel technique for monitoring of MOVPE processesVOLKOV, P. V; GORYUNOV, A. V; DANILTSEV, V. M et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4724-4726, issn 0022-0248, 3 p.Conference Paper

Modeling and simulation of a novel susceptor composed of two materials in MOVPE reactorZHIMING LI; JINCHENG ZHANG; YUE HAO et al.Journal of crystal growth. 2014, Vol 402, pp 175-178, issn 0022-0248, 4 p.Article

Effects of reactor pressure and residence time on GaN MOVPE growth efficiencyLUNDIN, W. V; ZAVARIN, E. E; SIZOV, D. S et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 605-609, issn 0022-0248, 5 p.Conference Paper

Control of abnormal edge growth in selective area MOVPE of InPSUGIYAMA, M; WAKI, N; NOBUMORI, Y et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 668-672, issn 0022-0248, 5 p.Conference Paper

An inverse-flow showerhead MOVPE reactor designRAN ZUO; QIAN XU; HONG ZHANG et al.Journal of crystal growth. 2007, Vol 298, pp 425-427, issn 0022-0248, 3 p.Conference Paper

Modeling the parasitic chemical reactions of AlGaN organometallic vapor-phase epitaxyCOLTRIN, Michael E; CREIGHTON, J. Randall; MITCHELL, Christine C et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 566-571, issn 0022-0248, 6 p.Conference Paper

Exceptionally stable vapor delivery of trimethylindium under intense OMVPE growth conditionsSHENAI-KHATKHATE, Deodatta V; WARE, Robert A; DICARLO, Ronald L et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 679-683, issn 0022-0248, 5 p.Conference Paper

MOVPE growth of high quality p-type InGaN with intermediate In compositionsSASAMOTO, K; HOTTA, T; SUGITA, K et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 492-495, issn 0022-0248, 4 p.Conference Paper

Accurate vapor pressure equation for trimethylindium in OMVPESHENAI-KHATKHATE, Deodatta V; DICARLO, Ronald L; WARE, Robert A et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 2395-2398, issn 0022-0248, 4 p.Article

Influence of growth rate in the early stage of high temperature GaN layer growth on quality of GaN filmsSHUTI LI; JUN SU; GUANGHAN FAN et al.Journal of crystal growth. 2008, Vol 310, Num 16, pp 3722-3725, issn 0022-0248, 4 p.Article

High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPEKATO, N; SATO, S; AKASAKI, I et al.Journal of crystal growth. 2007, Vol 298, pp 215-218, issn 0022-0248, 4 p.Conference Paper

An overview of gallium nitride growth chemistry and its effect on reactor design : Application to a planetary radial-flow CVD systemPARIKH, Rinku P; ADOMAITIS, Raymond A.Journal of crystal growth. 2006, Vol 286, Num 2, pp 259-278, issn 0022-0248, 20 p.Article

Optoelectronic devices on bulk GaNFIGGE, S; BÖTTCHER, T; DENNEMARCK, J et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 101-106, issn 0022-0248, 6 p.Conference Paper

Origin of room temperature ferromagnetism in homogeneous (In, Mn)As thin filmsBLATTNER, A. J; PRABHUMIRASHI, P. L; DRAVID, V. P et al.Journal of crystal growth. 2003, Vol 259, Num 1-2, pp 8-11, issn 0022-0248, 4 p.Article

Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring methodIWAYA, Motoaki; YAMAMOTO, Taiji; TANAKA, Daiki et al.Journal of crystal growth. 2014, Vol 401, pp 367-371, issn 0022-0248, 5 p.Conference Paper

Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxyKUN ZHOU; JIANPING LIU; SHUMING ZHANG et al.Journal of crystal growth. 2013, Vol 371, pp 7-10, issn 0022-0248, 4 p.Article

Influence of hydrogen input partial pressure on the polarity of InN on GaAs (11 1)A grown by metalorganic vapor phase epitaxyMURAKAMI, Hisashi; ERIGUCHI, Ken-Ichi; TORII, Jun-Ichi et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1602-1606, issn 0022-0248, 5 p.Article

Carrier injection efficiency in nitride LEDsLEE, Dong S; BYRNES, Daniel; PAREKH, Aniruddh et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5158-5161, issn 0022-0248, 4 p.Conference Paper

The growth mechanism of GaN with different H₂/N₂ carrier gas ratiosYONG SUK CHO; HARDTDEGEN, Hilde; KALUZA, Nicoleta et al.Journal of crystal growth. 2007, Vol 307, Num 1, pp 6-13, issn 0022-0248, 8 p.Article

Aluminum incorporation in Al_xGa_1-xN-layers and implications for growth optimizationROSSOW, U; FUHRMANN, D; LITTE, T et al.Journal of crystal growth. 2007, Vol 298, pp 361-366, issn 0022-0248, 6 p.Conference Paper

In-situ decomposition and etching of AlN and GaN in the presence of HClFAHLE, Dirk; KRUECKEN, Thomas; DAUELSBERG, Martin et al.Journal of crystal growth. 2014, Vol 393, pp 89-92, issn 0022-0248, 4 p.Conference Paper