PROPERTIES OF THE GOLD RELATED ACCEPTOR LEVEL IN SILICONKALYANARAMAN V; KUMAR V.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 1; PP. 317-323; ABS. GER; BIBL. 21 REF.Article

PHOTOIONIZATION OF GROUP-III ACCEPTORS IN SILICON.EDWARDS AH; FOWLER WB.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3613-3617; BIBL. 20 REF.Article

A NEW ACCEPTOR LEVEL IN INDIUM-DOPED SILICON.BARON R; YOUNG MH; NEELAND JK et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 11; PP. 594-596; BIBL. 18 REF.Article

THE DEGENERACY FACTOR OF THE GOLD ACCEPTOR LEVEL IN SILICON.RALPH HI.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 672-675; BIBL. 14 REF.Article

DOUBLE ACCEPTOR BOUND EXCITON IN GENAKATA H; YODO T; OTSUKA E et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 2; PP. 55-57; BIBL. 18 REF.Article

ON THE SELF-COMPENSATION OF DONORS IN LIQUID PHASE EPITAXIAL GAASPODOR B.1980; ACTA PHYS. ACAD. SCI. HUNG.; ISSN 0001-6705; HUN; DA. 1980; VOL. 48; NO 2-3; PP. 147-152; BIBL. 21 REF.Article

STIMULATED COMPLEX FORMATIONKOTINA IM; KURYATKOV VV; NOVIKOV SR et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 2; PP. 493-500; ABS. RUS; BIBL. 14 REF.Article

BAND STRUCTURE MODEL AND ELECTROSTATIC EFFECTS IN THIRD AND FOURTH STAGES OF GRAPHITE ACCEPTOR COMPOUNDSBLINOWSKI J; RIGAUX C.1980; J. PHYS.; ISSN 0302-0738; FRA; DA. 1980; VOL. 41; NO 7; PP. 667-676; ABS. FRE; BIBL. 15 REF.Article

PHOTOLUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAASLUM WY; WIEDER HH.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 12; PP. 6187-6188; BIBL. 13 REF.Article

FILAMENT INJECTE DANS UN SEMICONDUCTEUR A PIEGES PROFONDSGRIBNIKOV ZS.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 2; PP. 319-324; BIBL. 6 REF.Article

GRAPHIC REPRESENTATION OF THE GROUND STATE WAVE-FUNCTIONS OF THE SHALLOW ACCEPTOR IN GERMINIUMCHROBOCZEK JA; MCINNES JA.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 1; PP. L17-L20; BIBL. 2 REF.Article

COEFFICIENT DE VARIATION THERMIQUE NEGATIF DE LA CONCENTRATION A L'EQUILIBRE DES PORTEURS DE CHARGE POUR L'AUTOCOMPENSATION DANS SIC-BETAAJVAZOVA LS; VINETSKIJ VL; KHOLODAR GA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 12; PP. 2100-2104; BIBL. 7 REF.Article

REGLES DE SELECTION DE LA LUMINESCENCE CHAUDE DANS LES TRANSITIONS BANDE DE CONDUCTION-ACCEPTEURPOLYAKOV DG.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 12; PP. 3542-3549; BIBL. 14 REF.Article

PROCESSUS DU TRANSPORT ELECTRONIQUE A LA SURFACE DE SIO₂MIRONOV SL.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 5; PP. 1283-1284; BIBL. 4 REF.Article

NATURE OF THE 0. 111 EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICONBARON R; BAUKUS JP; ALLEN SD et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 257-259; BIBL. 18 REF.Article

UTILISATION DE L'OXYDE D'AZOTE COMME SONDE PARAMAGNETIQUE DANS L'ETUDE DE LA SURFACE DE GAMMA -AL₂O₃SELIVANOVSKIJ AK; LUNINA EV; GOLUBEV VB et al.1979; Z. FIZ. KHIM.; ISSN 0044-4537; SUN; DA. 1979; VOL. 53; NO 8; PP. 2079-2082; BIBL. 8 REF.Article

ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF HETEROJUNCTIONSKATNANI AD; MARGARITONDO G; ALLEN RE et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 8; PP. 1231-1234; BIBL. 20 REF.Article

RADIATIVE RECOMBINATION MEASUREMENTS IN P-TYPE CUINS₂VECCHI MP; RAMOS J.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2958-2960; BIBL. 15 REF.Article

LUMINESCENCE DE RECOMBINAISON PAR COMPLEXES AD CHARGESTOLPYGO EI; TOLPYGO KB; SHTAERMAN EH YA et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 3; PP. 467-472; BIBL. 3 REF.Article

DEFAUTS ELECTRIQUEMENT ACTIFS DE TYPE INTERSTITIEL DANS LE SILICIUM N IRRADIELITVINKO AG; MAKARENKO LF; MURIN LI et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 776-780; BIBL. 16 REF.Article

THE ELECTRON CAPTURE CROSS SECTION AND ENERGY LEVEL OF THE GOLD ACCEPTOR CENTER IN SILICON.BROTHERTON SD; BICKNELL J.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 667-671; BIBL. 18 REF.Article

THE NONRESONANT TRANSFER OF ENERGY BETWEEN IMPURITIES IN SOLIDS.ABESADZE TS; BUISHUILI LL.1978; PHYSICA B+C; PAYS-BAS; DA. 1978; VOL. 93; NO 1; PP. 83-92; BIBL. 16 REF.Article

ZUR ELEKTRISCHEN WIRKSAMKEIT VON IOD IM HALBLEITER TELLUR. = EFFICACITE ELECTRIQUE DE L'IODE DANS LE TELLURE SEMICONDUCTEURHOERSTEL W.1978; Z. PHYS. CHEM., LEIPZIG; DTSCH.; DA. 1978; VOL. 259; NO 3; PP. 545-550; ABS. ANGL.; BIBL. 16 REF.Article

IMPURITY GRADIENTS CAUSED BY SURFACE STATES AND SUBSTRATE DOPING IN EPITAXIAL GAAS.WOLFE CM; NICHOLS KH.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 5; PP. 356-359; BIBL. 13 REF.Article

THE ENERGY LEVELS OF PALLADIUM IN SILICON.SO L; GHANDHI SK.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 113-117; BIBL. 6 REF.Article