THE USE OF METALORGANICS IN THE PREPARATION OF SEMICONDUCTOR MATERIALS. V. THE FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYSMANASEVIT HM; SIMPSON WI.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 135-137; BIBL. 14 REF.Serial Issue

ZUM WACHSTUM VON A^IIIB^V-HALBLEITERN AUS NICHTSTOECHIOMETRISCHEN SCHMELZEN (II). DOTIERUNG VON GAAS UND GA_1-XAL_XAS MIT ZINK = CROISSANCE DE SEMICONDUCTEURS A^IIIB^V A PARTIR DE PRODUITS DE FUSION NON STOECHIOMETRIQUES (II). DOPAGE DE GAAS ET GA_1-XAL_XAS PAR LE ZINCJACOBS K; JACOBS B; BUTTER E et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 11; PP. 1209-1217; ABS. ANGL.; BIBL. 11 REF.Serial Issue

GROWTH OF CRYSTALS OF ZN₃AS₂ FROM CD₃AS₂IWAMI M; YOSHIDA M; KAWABE K et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 12; PP. 1861-1862; BIBL. 5 REF.Serial Issue

DIE STRUKTUREN DER INTERMETALLISCHEN VERBINDUNGEN SR₂AS, BA₂AS, SR₅AS₃, BA₅AS₃. = LES STRUCTURES DES COMPOSES INTERMETALLIQUES SR₂AS, BA₂AS, SR₅AS₃ ET BA₅AS₃BETTER B; HUTZ A; NAGORSEN G et al.1976; Z. METALLKDE; DTSCH.; DA. 1976; VOL. 67; NO 2; PP. 118-119; ABS. ANGL.; BIBL. 6 REF.Article

THE GROWTH OF A GAAS-GAALAS SUPERLATTICECHANG LL; ESAKI L; HOWARD WE et al.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 11-16; BIBL. 19 REF.Serial Issue

RAMAN SPECTRA OF CAAS₃, EUAS₃, SRAS₃, BAAS₃, AND ALPHA -EUP₃ AND THE MIXED PHASES, EU_1-XSR_XAS₃, AND EU(P_1-XAS_X)₃OLES B; STOLZ HJ; VON SCHNERING HG et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 106; NO 1; PP. 157-170; ABS. GER; BIBL. 20 REF.Article

THE VARIATION OF THE SOLID COMPOSITION DURING THE LPE GROWTH OF GA_1-XAL_XASRADO WG; CRAWLEY RL.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 12; PP. 1779-1780; BIBL. 5 REF.Serial Issue

HERSTELLUNG UND PHYSIKALISCHE GRUNDCHARAKTERISIERUNG VON AL_1-XGA_XAS-KRISTALLEN = PREPARATION ET CARACTERISATION PHYSIQUE FONDAMENTALE DES CRISTAUX AL_1-XGA_XASFISCHER P; KUHN G; BINDEMANN R et al.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 167-176; ABS. ANGL.; BIBL. 28 REF.Serial Issue

ON THE CRYSTAL STRUCTURE OF THE COMPOUNDS CAP, SRP, CAAS, SRAS AND EUASIANDELLI A; FRANCESCHI E.1973; J. LESS-COMMON METALS; NETHERL.; DA. 1973; VOL. 30; NO 2; PP. 211-216; BIBL. 6 REF.Serial Issue

GROWTH OF ALGAAS-GAAS HETEROSTRUCTURES FROM STEP-COOLED SOLUTIONS.RODE DL; SOBERS RG.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 1; PP. 61-64; BIBL. 19 REF.Article

DISSOCIATION THERMIQUE DES COMPOSES A^IIB^IVAS₂GLAZOV VM; LEBEDEV VV; MOLODYK AD et al.1979; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1979; VOL. 15; NO 10; PP. 1730-1734; BIBL. 14 REF.Article

HETEROSURFACE GAAS LIGHT EMITTING DIODES.LASTRAS MARTINEZ A; KONAGAI M; TAKAHASHI K et al.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 5; PP. 641-643; BIBL. 3 REF.Article

CRYSTAL STRUCTURES OF THE HIGH PRESSURE PHASE ZNAS AND CDAS.CLARK JB; RANGE KJ.1976; Z. NATURFORSCH., B; DTSCH.; DA. 1976; VOL. 31; NO 2; PP. 158-162; BIBL. 6 REF.Article

ABX-VERBINDUNGEN MIT NI₂IN-STRUKTUR. DARSTELLUNG UND STRUKTUR DER VERBINDUNGEN CACUP (AS), SRCUP(AS), SRAGP (AS) UND EU CU AS = COMPOSES ABX DE STRUCTURE NI₂IN. PREPARATION ET STRUCTURE DES COMPOSES CACUP(AS), SRCUP(AS), SRAGP(AS) ET EUCUASMEWIS A.1978; Z. NATURFORSCH., B; DEU; DA. 1978; VOL. 33; NO 9; PP. 983-986; ABS. ENG; BIBL. 11 REF.Article

DARSTELLUNG UND KRISTALLSTRUKTUR VON K₃AG₃AS₂ UND K₃CU₃AS₂ = PREPARATION ET STRUCTURE CRISTALLINE DE K₃AG₃AS₂ ET K₃CU₃AS₂SAVELSBERG G; SCHAFER H.1979; Z. NATURFORSCH., B; DEU; DA. 1979; VOL. 34; NO 7; PP. 1033-1034; ABS. ENG; BIBL. 2 REF.Article

NEUE TERNAERE ERDALKALIVERBINDUNGEN DES ARSENS MIT MANGAN = NOUVEAUX COMPOSES ALCALINOTERREUX TERNAIRES D'AS AVEC MNBRECHTEL E; CORDIER G; SCHAFER H et al.1978; Z. NATURFORSCH., B; DEU; DA. 1978; VOL. 33; NO 7; PP. 820-822; ABS. ENG; BIBL. 8 REF.Article

DARSTELLUNG UND STRUKTUR VON K₂PDAS₂ = PREPARATION ET STRUCTURE DE K₂PDAS₂SCHUSTER MU; ROZSA S.1979; Z. NATURFORSCH., B; DEU; DA. 1979; VOL. 34; NO 8; PP. 1167-1168; ABS. ENG; BIBL. 6 REF.Article

CHALEURS DE FORMATION DES COMPOSES A^IIB^IVC^V₂ ET A^IB^IIIC^VI₂GLAZOV VM; LEBEDEV VV; MOLODYK AD et al.1979; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1979; VOL. 15; NO 10; PP. 1865-1867; BIBL. 13 REF.Article

HIGH TEMPERATURE STUDIES OF MARCASITE AND ARSENOPYRITE TYPE COMPOUNDS.KJEKSHUS A; RAKKE T.1977; ACTA CHEM. SCAND., A; DANEM.; DA. 1977; VOL. 31; NO 7; PP. 517-529; BIBL. 27 REF.Article

SYNTHESE ET ETUDE STRUCTURALE D'UN NOUVEL ARSENIURE TERNAIRE DE NICKEL ET DE MOLYBDENE: NI_XMO₂AS₃GUERIN R; POTEL M; SERGENT M et al.1974; C.R. ACAD. SCI., C; FR.; DA. 1974; VOL. 279; NO 12; PP. 517-519; BIBL. 2 REF.Article

PREPARATION DE DEUX COMPOSES DANS LE SYSTEME CA-GA-AS: CA₅GA₂AS₆ ET CA₄GA₃AS₅VERDIER P; MAUNAYE M; MARCHAND R et al.1975; C.R. ACAD. SCI., C; FR.; DA. 1975; VOL. 281; NO 2; PP. 457-459; ABS. ANGL.; BIBL. 3 REF.Article

SHORT RANGE ORDER PARAMETERS FOR TERNARY ZINC BLENDE SUBSTITUTIONAL SOLID SOLUTIONSBRUHL HG; SCHMIDT W.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 127-131; ABS. ALLEM.; BIBL. 11 REF.Serial Issue

FIELD EFFECT OF GAAS PHOTOLUMINESCENCE IN THE GAP-GAAS AND GA_0.3AL_0.7 AS-GAAS HETEROJUNCTIONSHORIKOSHI Y; FURUKAWA Y.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 9; PP. 1325-1332; BIBL. 12 REF.Serial Issue

ON THE MAGNETIC PROPERTIES OF TRANSITION METAL SUBSTITUTED MNAS.SELTE K; KJEKSHUS A; ANDRESEN AF et al.1977; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1977; VOL. 38; NO 7; PP. 719-725; BIBL. 18 REF.Article

THEORETICAL ANALYSIS OF GRADED-BAND-GAP GALLIUM-ALUMINIUM ARSENIDE/GALLIUM ARSENIDE P-GA_1-XAL_XAS/P-GAAS/N-GAAS SOLAR CELLS. = ANALYSE THEORIQUE DES CELLULES SOLAIRES DE TYPE GALLIUM-ARSENIURE D'ALUMINIUM/ARSENIURE DE GALLIUM P-GA_1-XAL_XAS/P-GAAS/N-GAAS AVEC ECARTS DE BANDES GRADUESKONAGAI M; TAKAHASHI K.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 3; PP. 259-264; BIBL. 17 REF.Article