kw.\*:("Al As Ga Sb")
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Quantitative thermal imaging of GaInAsSb/AlGaAsSb laser diodes by thermoreflectanceTESSIER, G; SALHI, A; ROUILLARD, Y et al.Journal de physique. IV. 2005, Vol 125, pp 375-378, issn 1155-4339, 4 p.Conference Paper
Use of AlOx in cladding layers of an antimonide laser structure emitting at 2.3 μmHANFOUG, R; SALESSE, A; YAREKHA, D. A et al.Semiconductor science and technology. 2001, Vol 16, Num 11, pp 936-938, issn 0268-1242Article
Band discontinuities of perfectly lattice-matched GaSb(n)/GaAlAsSb(p)/GaSb(p) double heterojunctionAIT KACI, H; BOUKREDIMI, D; MEBARKI, M et al.Physica status solidi. A. Applied research. 1997, Vol 163, Num 1, pp 101-106, issn 0031-8965Article
Lasers à injection à Ga0.88 In0.12 As0.10 Sb0.90 = In0.12Ga0.88As0.10Sb0.90 injection lasersSegura Fouillant, Catherine; Joulliè, A.1995, 243 p.Thesis
Impurity distribution near a p-GalnAsSb/p-GaAlAsSb heterojunctionBOGOSLOVSKAYA, A. B; KOLCHARNOVA, N. M; MANYAKHIN, F. I et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 9, pp 870-871, issn 1063-7826Article
Tunable laser diodes with type II superlattice in the tuning regionNEBER, S; AMANN, M.-C.Semiconductor science and technology. 1998, Vol 13, Num 7, pp 801-805, issn 0268-1242Article
High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 μmCHOI, H. K; TURNER, G. W; EGLASH, S. J et al.IEEE photonics technology letters. 1994, Vol 6, Num 1, pp 7-9, issn 1041-1135Article
Optical gain of InGaAsSb/AlGaAsSb type-I long wavelength quantum-well lasersXU GANGYI; LI AIZHEN.Semiconductor science and technology. 2003, Vol 18, Num 9, pp 827-833, issn 0268-1242, 7 p.Article
Accurate control of Sb composition in AlGaAsSb alloys on InP substrates by molecular beam epitaxyALMUNEAU, G; HALL, E; MATHIS, S et al.Journal of crystal growth. 2000, Vol 208, Num 1-4, pp 113-116, issn 0022-0248Article
Molecular beam epitaxy of AlGaAsSb system for 1.55 μm Bragg mirrorsHARMAND, J. C; KOHL, A; JUHEL, M et al.Journal of crystal growth. 1997, Vol 175-76, pp 372-376, issn 0022-0248, 1Conference Paper
Elastic constants and related properties of AlxGa1-xAsySb1-y/InAsBOUARISSA, N; BACHIRI, R.Physica. B, Condensed matter. 2002, Vol 322, Num 1-2, pp 193-200, issn 0921-4526Article
Influence of arsenic concentration on the surface morphology and photoluminescence of LPE grown AlGaAsSb/GaSb with high aluminium contentDUTTA, P. S; BHAT, H. L; KUMAR, V et al.Journal of crystal growth. 1996, Vol 160, Num 1-2, pp 177-180, issn 0022-0248Article
Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm = Characterization below threshold of GaInAsSb-GaAlAsSb double heterostructure lasers emitting near 2.37 μLECLERCQ, J. L; GRUNBERG, P; BOISSIER, G et al.Journal de physique. III (Print). 1993, Vol 3, Num 10, pp 1963-1979, issn 1155-4320Article
Control by an electric field of electron-hole separation in type-II heterostructuresVASILYEV, Yu. B; SOLOV'EV, V. A; MEL'TSER, B. Ya et al.Solid state communications. 2002, Vol 124, Num 9, pp 323-326, issn 0038-1098, 4 p.Article
Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3-2.7 μm laser structuresSIMANOWSKI, S; HERRES, N; MERMELSTEIN, C et al.Journal of crystal growth. 2000, Vol 209, Num 1, pp 15-20, issn 0022-0248Article
Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phasesMISHURNYI, V. A; DE ANDA, F; GORBATCHEV, A. Yu et al.Journal of electronic materials. 1999, Vol 28, Num 8, pp 959-962, issn 0361-5235Article
AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliabilityMIYA, S; MURAMATSU, S; KUZE, N et al.Journal of electronic materials. 1996, Vol 25, Num 3, pp 415-420, issn 0361-5235Conference Paper
Single-frequency GalnAsSB/AlGaAsSb quantum-well ridge-waveguide lasers emitting at 2.1 μmCHOI, H. K; EGLASH, S. J; CONNORS, M. K et al.Applied physics letters. 1993, Vol 63, Num 24, pp 3271-3272, issn 0003-6951Article
Liquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devicesMAUK, M. G; SHELLENBARGER, Z. A; COX, J. A et al.Journal of crystal growth. 2000, Vol 211, Num 1-4, pp 189-193, issn 0022-0248Conference Paper
2.78 μm InGaAsSb/AlGaAsSb multiple quantum-well lasers with metastable InGaAsSb wells grown by molecular beam epitaxyLEE, H; YORK, P. K; MENNA, R. J et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1354-1357, issn 0022-0248, 2Conference Paper
GaInAsSb-AlGaAsSb tapered lasers emitting at 2 μmCHOI, H. K; WALPOLE, J. N; TURNER, G. W et al.IEEE photonics technology letters. 1993, Vol 5, Num 10, pp 1117-1119, issn 1041-1135Article
Current-voltage characteristic and Schottky barrier height of the GaAlAsSb(p)/GaSb(n+) heterostructureAIT KACI, H; BOUKREDIMI, D; MEBARKI, M et al.Physica status solidi. A. Applied research. 2001, Vol 183, Num 2, pp 345-351, issn 0031-8965Article
Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μmSALHI, A; ROUILLARD, Y; PERONA, A et al.Semiconductor science and technology. 2004, Vol 19, Num 2, pp 260-262, issn 0268-1242, 3 p.Article
MOVPE of GaSb, (AlGa)Sb and (AlGa)(AsSb) in a multiwafer planetary reactorAGERT, Carsten; LANYI, Peter; BETT, Andreas W et al.Journal of crystal growth. 2001, Vol 225, Num 2-4, pp 426-430, issn 0022-0248Conference Paper
Calibration of the arsenic mole fraction in MBE grown GaAsySb1-y and AlxGa1-xAsySb1-y (y < 0.2)SELVIG, E; FIMLAND, B. O; SKAULI, T et al.Journal of crystal growth. 2001, Vol 227-28, pp 562-565, issn 0022-0248Conference Paper
