Transistor à effet de champ, à hétérojonction et grille isolée : fabrication et étude de SISFET GaAs!AlGaAs et GaAs!GaInAs!AlGaAsSchmidt, Poul Erik; Pons.1989, 176 p.Thesis

Theoretical and practical research of the use of inductors for improving DLTS characterization of semiconductorsRANGEL-KUOPPA, Victor-Tapio; TUKIAINEN, Antti; DEKKER, James et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 751-753, issn 0959-8324, 3 p.Conference Paper

Plasmon-LO phonon interaction effects on the intrasubband and intersubband transition energies in a quantum well wireBORGES, A. N; OSORIO, F. A. P; MACHADO, P. C. M et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 529-531, issn 0959-8324, 3 p.Conference Paper

Effect of pulsed heating of the active region of an injection laser on the dynamics- of storage of a pulse information sequence in an electrooptical recirculation circuitKOROSTIK, K. N; KUZ'MIN, K. G; POLYAKOV, A. V et al.Journal of engineering physics and thermophysics. 2001, Vol 74, Num 2, pp 383-389, issn 1062-0125Article

Emission of optically coupled semiconductor lasersBORISOV, P. V; BYKOVSKII, Yu A; DEDUSHENKO, K. B et al.Quantum electronics (Woodbury). 2000, Vol 30, Num 10, pp 867-872, issn 1063-7818Article

Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistorSI-CHEN LEE; JAU-NAN KAU; HAO-HSIUNG LIN et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1114-1116, issn 0003-6951Article

Multi-configurations et état de charge du centre DX dans l'alliage AlxGaA1-xAs dopé Si = DX center in Al_xGa_1-xAs:Si-multiconfigurations and charge stateLorenzini, Philippe; Robert, Jean-Louis.1992, 111 p.Thesis

Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructuresZAMORA-PEREDO, L; GUILLEN-CERVANTES, A; RIVERA-ALVAREZ, Z et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 521-523, issn 0959-8324, 3 p.Conference Paper

Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistorsCHAND, N; FISCHER, R; MORKOC, H et al.Applied physics letters. 1985, Vol 47, Num 3, pp 313-315, issn 0003-6951Article

Saturation in the transfer characteristics of (Al, Ga)As/GaAs modulation-doped field-effect transistors at 77 KMASSELINK, W. T; DRUMMOND, T. J; KLEM, J et al.Applied physics letters. 1984, Vol 45, Num 11, pp 1190-1192, issn 0003-6951Article

Formation of multiple nanoscale twin boundaries that emit intense light in indirect-gap AlGaAs epilayersOHNO, Y; SHODA, K; TAISHI, T et al.Applied surface science. 2008, Vol 254, Num 23, pp 7633-7637, issn 0169-4332, 5 p.Conference Paper

Optical properties and photonic mode dispersion in two-dimensional and waveguide-embedded photonic crystalsANDREANI, L. C; AGIO, M; BAJONI, D et al.Synthetic metals. 2003, Vol 139, Num 3, pp 695-700, issn 0379-6779, 6 p.Conference Paper

Twin channel laser with high cw power and low beam divergenceFIGUEROA, L; MORRISON, C; LAW, H. D et al.Journal of applied physics. 1984, Vol 56, Num 11, pp 3357-3359, issn 0021-8979Article

A two-stack, multi-color quantum well infrared photodetector for mid- and long-wavelength infrared detectionLI, Sheng S; KIM, Seung-Hwan; MOON, Jun-Hee et al.Infrared physics & technology. 2003, Vol 44, Num 4, pp 235-241, issn 1350-4495, 7 p.Article

MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasersSTRASSER, G; GIANORDOLI, S; SCHRENK, W et al.Journal of crystal growth. 2001, Vol 227-28, pp 197-201, issn 0022-0248Conference Paper

Propriétés électrooptiques des transitions intrabandes dans les multipuits quantiques GaAs/AlGaAs. Application à la détection infrarouge = Electrooptical properties of intraband transitions in GaAs:AlGaAs multiquantum wells. Application to infrared detectionMartinet, Eric; Rosencher, Emmanuel.1992, 220 p.Thesis

A new chemical etching technique for formation of cavity facets of (GaAl)As lasersWADA, M; HAMADA, K; SHIBUTANI, T et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 6, pp 658-662, issn 0018-9197Article

Monolithic phase-locked GaAlAs laser arraysKAPPELER, F.Siemens Forschungs- und Entwicklungsberichte. 1985, Vol 14, Num 6, pp 289-294, issn 0370-9736Article

Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistorsCHAND, N; FISCHER, R; HENDERSON, T et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1086-1088, issn 0003-6951Article

Catastrophic and latent damage in GaAlAs lasers caused by electrical transientsSIM, S. P; ROBERTSON, M. J; PLUMB, R. G et al.Journal of applied physics. 1984, Vol 55, Num 11, pp 3950-3955, issn 0021-8979Article

Extremely low resistance ohmic contacts to n-GaAs for AlGaAs/GaAs heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 8, pp L635-L637, issn 0021-4922, 2Article

Direct measurement of the potential spike energy in AlGaAs/GaAs single-heterojunction bipolar transistorsLIN, H.-H; LEE, S.-C.IEEE electron device letters. 1985, Vol 6, Num 8, pp 431-433, issn 0741-3106Article

Single mode, high power GaAlAs/GaAs lasersFU, R. J; HWANG, C. J; WANG, C. S et al.Applied physics letters. 1984, Vol 45, Num 7, pp 716-718, issn 0003-6951Article

Aging behavior and surge endurance of 870-900 nm AlGaAs lasers with nonabsorbing mirrorsKADOTA, Y; CHINO, K; ONODERA, Y et al.IEEE journal of quantum electronics. 1984, Vol 20, Num 11, pp 1247-1251, issn 0018-9197Article

Hétéro-lasers à injection avec des caractéristiques améliorées du rayonnementADLIVANKIN, A. S; ALAVERDYAN, S. A; ZHUKOV, N. D et al.Žurnal tehničeskoj fiziki. 1984, Vol 54, Num 11, pp 2196-2200, issn 0044-4642Article