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Index of refraction of AlAs-GaAs superlatticesLEBURTON, J. P; HESS, K; HOLONYAK, N. JR et al.Journal of applied physics. 1983, Vol 54, Num 7, pp 4230-4231, issn 0021-8979Article

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Leakage-induced and disorder-activated modes from the folded acoustic branches in GaAs-AlAs superlatticesSAPRIEL, J; CHAVIGNON, J; ALEXANDRE, F et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 10, pp 7118-7122, issn 0163-1829Article

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Optical investigations of electron transport through GaAs/AlAs heterostructuresSCHLESINGER, T. E; COLLINS, R. T; MCGILL, T. C et al.Journal of applied physics. 1985, Vol 58, Num 2, pp 852-856, issn 0021-8979Article

Elimination of persistent photo-conductivity and improvement in Si activation coefficient by Al spatial separation from Ga and Si in Al-Ga-As Si solid system. A novel short period AlAs/n-GaAs superlatticeBABA, T; MIZUTANI, T; OGAWA, M et al.Japanese journal of applied physics. 1983, Vol 22, Num 10, pp L627-L629, issn 0021-4922Article

Photoacoustic spectroscopy of semiconductor heterostructures by piezoelectric transducersKUBOTA, K; MURAI, H; NAKATSU, H et al.Journal of applied physics. 1984, Vol 55, Num 6, pp 1520-1524, issn 0021-8979Article

BREVET 2.316.190 (A1) (76 18677). - 18 JUIN 1976. STABILISATION D'ARSENIURE D'ALUMINIUM.sdPatent

GaAs/A1As superlattices for detection of terahertz radiationWINNERL, S.Microelectronics journal. 2000, Vol 31, Num 6, pp 389-396, issn 0959-8324Article

Low threshold InAlGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxyCHYI, J.-I; GAU, J.-H; SHIEH, J.-L et al.Solid-state electronics. 1995, Vol 38, Num 5, pp 1105-1106, issn 0038-1101Article

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Rectification in heavily doped p-type GaAs/AlAs heterojunctionsYOFFE, G. W.Journal of applied physics. 1991, Vol 70, Num 2, pp 1081-1083, issn 0021-8979Article

Raman scattering from (A1As)_m (GaAs)_n ultrathin-layer superlatticesISHIBASHI, A; ITABASHI, M; MORI, Y et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 4, pp 2887-2889, issn 0163-1829Article

Observation of enhanced spontaneous decay in 1μm aperture microcavities with InGaAlAs quantum dot active regionsGRAHAM, L. A; DENG, Q; CSUTAK, S. M et al.SPIE proceedings series. 1999, pp 288-292, isbn 0-8194-3095-1Conference Paper

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MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlatticesFULIN XIONG; TOMBRELLO, T. A; SCHWARTZ, C. L et al.Applied physics letters. 1990, Vol 57, Num 9, pp 896-898, issn 0003-6951Article

Photoluminescence of GaAs single quantum wells confined by short-period all-binary GaAs/AlAs superlatticesFUJIWARA, K; PLOOG, K.Applied physics letters. 1984, Vol 45, Num 11, pp 1222-1224, issn 0003-6951Article

Effect of well size fluctuation on photoluminescence spectrum of AlAs―GaAs superlatticesGOLDSTEIN, L; HORIKOSHI, Y; TARUCHA, S et al.Japanese journal of applied physics. 1983, Vol 22, Num 10, pp 1489-1492, issn 0021-4922Article

Electron diffraction due to a reflection grating in a quantum wireKYOUNG WAN PARK; SEONGJAE LEE; MINCHEOL SHIN et al.SPIE proceedings series. 1998, pp 89-92, isbn 0-8194-2756-X, 2VolConference Paper