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Adsorption of amino acids on indium arsenide (100) surfaces : Assessment of passivation capabilitiesSLAVIN, John W. J; ZEMLYANOV, Dmitry; IVANISEVIC, Albena et al.Surface science. 2009, Vol 603, Num 6, pp 907-911, issn 0039-6028, 5 p.Article

Short-wavelength GaInNAs/GaAs semiconductor disk lasersVETTER, S. L; HASTIE, J. E; KORPIJARVI, V.-M et al.Electronics Letters. 2008, Vol 44, Num 18, pp 1069-1070, issn 0013-5194, 2 p.Article

Spatially and energetically resolved optical mapping of self-aligned InAs quantum dotsWELSCH, H; KIPP, T; KÖPPEN, T et al.Semiconductor science and technology. 2008, Vol 23, Num 4, issn 0268-1242, 045016.1-045016.3Article

Optical properties of InAs/In0.15Ga0.85As quantum dots-in-a-well studied by piezomodulated reflectance spectroscopyWANG, C; YANG, Y; CHEN, X. M et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 3, pp 585-590, issn 1386-9477, 6 p.Article

INFLUENCE DU NIVEAU DE DOPAGE SUR LA FORME DE LA BANDE LIMITE DE LUMINESCENCE DE L'ARSENIURE D'INDIUMVIL'KOTSKIJ VA; DOMANEVSKIJ DS; KAKANAKOV RD et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 5; PP. 945-955; BIBL. 17 REF.Article

ELECTROREFLECTANCE SPECTRUM OF INAS IN THE RANGE OF E0 AND E0+DELTA 0 TRANSITIONS.LUKES F.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 84; NO 2; PP. K113-K117; BIBL. 13 REF.Article

ETUDE DE LA FORME DES SPECTRES DE REFLEXION ELECTROOPTIQUE DE INASKAVALYAUSKAS YU F; SHILEJKA A YU.1972; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1972; VOL. 12; NO 4; PP. 659-666; ABS. LITU. ANGL.; BIBL. 19 REF.Serial Issue

DISPERSION SPATIALE DU PHONON OPTIQUE LONGITUDINAL DANS INAS N (SPECTRES RAMAN)IVCHENKO EL; MIRLIN DN; RESHINA II et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 8; PP. 2282-2287; BIBL. 13 REF.Article

ETUDE DE LA CINETIQUE DE LA F.E.M. PHOTOELECTRIQUE DANS LES JONCTIONS P-N A BASE D'INASANDRUSHKO AI; NASLEDOV DN; SLOBODCHIKOV SV et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 5; PP. 822-825; BIBL. 2 REF.Serial Issue

EFFET MAGNETOPHONON DANS L'ARSENIURE D'INDIUM EN COMPRESSION HYDROSTATIQUESHUBNIKOV ML; MASHOVETS DV; PARFEN'EV RV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 8; PP. 1499-1502; BIBL. 17 REF.Article

PHOTOCONDUCTIVITE NEGATIVE ET PHOTOMEMOIRE CAUSEES PAR LA BARRIERE DE POTENTIEL A LA SURFACE DE INASBALAGUROV LA; OMEL'YANOVSKIJ EH M; FISTUL VI et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 5; PP. 944-947; BIBL. 18 REF.Article

CATHODOLUMINESCENCE DE L'ARSENIURE D'INDIUM DE TYPE N FORTEMENT DOPEVIL'KOTSKIJ VA; DOMANEVSKIJ DS; KAKANAKOV RD et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 8; PP. 1457-1462; BIBL. 13 REF.Article

CARACTERISTIQUES DE LA DIFFUSION D'UN ELECTRON D'ESSAI PAR UN MECANISME DE DIFFUSION OPTIQUE DANS L'INSB-NKAZLAUSKAS PA; SIROJTS YA G.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 7; PP. 1257-1260; BIBL. 5 REF.Article

EMISSION INTRABANDE ET ABSORPTION DE LA LUMIERE INFRAROUGE DANS DES CHAMPS ELECTRIQUES INTENSES DANS LE N-INASVOROB'EV LE.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 7; PP. 1291-1299; BIBL. 14 REF.Article

THE MOSS-BURSTEIN EFFECT IN N-TYPE INDIUM ARSENIDE CRYSTALS DOPED WITH DIFFERENT DONOR IMPURITIES.FILIPCHENKO AS; BOLSHAKOV LP; NAURIZBAEV A et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 87; NO 1; PP. K1-K3; BIBL. 11 REF.Article

SIGN INVERSION OF PHOTOMAGNETOELECTRIC EFFECT IN INAS AT INTENSE PHOTOEXCITATION.SHATKOVSKII E; TAMASEVICIUS A.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 1; PP. 111-114; ABS. RUSSE; BIBL. 12 REF.Article

ABSORPTION A 3 PHOTONS ET DICHROISME POLARISE RECTILIGNEMENT DANS INASDANISHEVSKIJ AM; KOCHEGAROV SF; SUBASHIEV VK et al.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 70; NO 1; PP. 158-162; ABS. ANGL.; BIBL. 8 REF.Article

RECOMBINAISON RADIATIVE DES PORTEURS CHAUDS DANS L'ARSENIURE D'INDIUMBANSI GRIJO M; GRIJO EH; ZOTOVA NV et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 1; PP. 53-57; BIBL. 11 REF.Article

EFFECT OF ELECTRON-HOLE INTERACTION ON THE AUGER RECOMBINATION PROCESS IN A SEMICONDUCTOR.TAKESHIMA M.1975; J. APPL. PHYS.; U.S.A; DA. 1975; VOL. 46; NO 7; PP. 3082-3088; BIBL. 19 REF.Article

RAMAN SCATTERING BY WAVE-VECTOR-DEPENDENT LO-PHONON-PLASMON MODES IN N-INAS.BUCHNER S; BURSTEIN E.1974; PHYS. REV. LETTERS; U.S.A.; DA. 1974; VOL. 33; NO 15; PP. 908-911; BIBL. 15 REF.Article

THE DE HASS-VAN ALPHEN EFFECT IN N-INSB AND N-INAS.BRIGNALL NL.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 23; NO 7; PP. 4266-4276; BIBL. 15 REF.Article

IMPACT IONIZATION IN NARROW GAP SEMICONDUCTORSCURBY RC; FERRY DK.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 1; PP. 319-328; ABS. ALLEM.; BIBL. 28 REF.Serial Issue

MAGNETORESISTANCE NEGATIVE DANS L'ARSENIURE D'INDIUM COMPENSE DE TYPE NGARYAGDYEV G; EMEL'YANENKO OV; ZOTOVA NV et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 4; PP. 700-706; BIBL. 14 REF.Serial Issue

PHOTOLUMINESCENCE DES CRISTAUX DE INAS N DOPES PAR L'ETAINZOTOVA NV; KARATAEV VV; KOVAL AV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 10; PP. 1944-1948; BIBL. 6 REF.Article

VARIATION DE L'INDICE DE REFRACTION D'UN SEMICONDUCTEUR EN FONCTION DE LA TENSION DE DERIVE DES PORTEURSALMAZOV LA.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 4; PP. 657-664; BIBL. 11 REF.Article

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