kw.\*:("B1. GaN on silicon")
Results 1 to 2 of 2
Selection :
Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN filmsCORDIER, Yvon; FRAYSSINET, Eric; VENNEGUES, Philippe et al.Journal of crystal growth. 2014, Vol 398, pp 23-32, issn 0022-0248, 10 p.Article
Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxyCORDIER, Y; MORENO, J.-C; BARON, N et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2683-2688, issn 0022-0248, 6 p.Article
