Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrateGEKA, Hirotaka; YAMADA, Satoshi; TOITA, Masato et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 522-524, issn 0022-0248, 3 p.Conference Paper

Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applicationsSTORM, D. F; KATZER, D. S; MITTEREDER, J. A et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 32-37, issn 0022-0248, 6 p.Conference Paper

Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wellsKADOW, C; LIN, H.-K; DAHLSTRÖM, M et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 543-546, issn 0022-0248, 4 p.Conference Paper

Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substratesKIM, Byung-Jae; KIM, Hong-Yeol; KIM, Jihyun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 205-207, issn 0022-0248, 3 p.Conference Paper

Influence of a parallel electric field on the dispersion relation of graphene - A new route to Dirac logicsKRUKOWSKI, Stanisław; SOLTYS, Jakub; BORYSIUK, Jolanta et al.Journal of crystal growth. 2014, Vol 401, pp 869-873, issn 0022-0248, 5 p.Conference Paper

Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBEFURUTA, K; NAKAMURA, N; SHEN, X. Q et al.Journal of crystal growth. 2007, Vol 301-302, pp 437-441, issn 0022-0248, 5 p.Conference Paper

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protonsKIM, Hong-Yeol; ANDERSON, Travis; MASTRO, Michael A et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 62-64, issn 0022-0248, 3 p.Conference Paper

Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxyBORYSIUK, J; SOBCZAK, K; WIERZBICKA, A et al.Journal of crystal growth. 2014, Vol 401, pp 355-358, issn 0022-0248, 4 p.Conference Paper

MOVPE growth of nonpolar a―plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrateISOBE, Yasuhiro; IKKI, Hiromichi; MORI, Yusuke et al.Journal of crystal growth. 2012, Vol 351, Num 1, pp 126-130, issn 0022-0248, 5 p.Article

MBE growth of AlGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performancesCORDIER, Y; SEMOND, F; GAQUIERE, C et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 811-815, issn 0022-0248, 5 p.Conference Paper

Growth of shallow InAs HEMTs with metamorphic bufferHEYN, Ch; MENDACH, S; LÖHR, S et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 832-836, issn 0022-0248, 5 p.Conference Paper

Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVDGRZEGORCZYK, A. P; MACHT, L; HAGEMAN, P. R et al.Journal of crystal growth. 2005, Vol 273, Num 3-4, pp 424-430, issn 0022-0248, 7 p.Article

Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxyMANUEL, Jose M; MORALES, Francisco M; GARCIA, Rafael et al.Journal of crystal growth. 2012, Vol 357, pp 35-41, issn 0022-0248, 7 p.Article

Local strained silicon platform based on differential SiGe/Si epitaxyKARMOUS, A; OEHME, M; WERNER, J et al.Journal of crystal growth. 2011, Vol 324, Num 1, pp 154-156, issn 0022-0248, 3 p.Article

Molecular beam epitaxy in a high-volume GaAs fabROGERS, T. J.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1671-1675, issn 0022-0248, 5 p.Conference Paper

Anisotropic structural and electronic properties of InSb/ Al_xIn_1-xSb quantum wells grown on GaAs (001) substratesMISHIMA, T. D; KEAY, J. C; GOEL, N et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 551-555, issn 0022-0248, 5 p.Conference Paper

Properties of metamorphic materials and device structures on GaAs substratesHOKE, W. E; KENNEDY, T. D; XU, C et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 804-810, issn 0022-0248, 7 p.Conference Paper

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substratesSTORM, D. F; DEEN, D. A; KATZER, D. S et al.Journal of crystal growth. 2013, Vol 380, pp 14-17, issn 0022-0248, 4 p.Article

High-performance AlGaN/GaN High-electron-mobility transistors employing H₂O annealingWOOJIN AHN; OGYUN SEOK; SEUNG MIN SONG et al.Journal of crystal growth. 2013, Vol 378, pp 600-603, issn 0022-0248, 4 p.Conference Paper

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy : The critical role of growth temperatureCORDIER, Y; BARON, N; CHENOT, S et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2002-2005, issn 0022-0248, 4 p.Conference Paper

Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBECORDIER, Y; SEMOND, F; MASSIES, J et al.Journal of crystal growth. 2007, Vol 301-302, pp 434-436, issn 0022-0248, 3 p.Conference Paper

Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition methodKANG, Se-Koo; JEON, Min-Hwan; PARK, Jong-Yoon et al.Journal of crystal growth. 2010, Vol 312, Num 14, pp 2145-2149, issn 0022-0248, 5 p.Article

Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structuresKAKANAKOVA -GEORGIEVA, A; FORSBERG, U; IVANOV, I. G et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 100-103, issn 0022-0248, 4 p.Conference Paper

Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substratesNAKAMURA, N; FURUTA, K; SHEN, X. Q et al.Journal of crystal growth. 2007, Vol 301-302, pp 452-456, issn 0022-0248, 5 p.Conference Paper

X-ray characterization of stacked InP/(InGa)As:C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sourcesVELLING, P; KEIPER, D; BRENNEMANN, A et al.Journal of crystal growth. 2003, Vol 248, pp 139-143, issn 0022-0248, 5 p.Conference Paper