Damage of light-emitting diodes induced by high reverse-bias stressCHEN, N. C; WANG, Y. N; WANG, Y. S et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 994-997, issn 0022-0248, 4 p.Conference Paper

Thermal and mechanical analysis of delamination in GaN-based light-emitting diode packagesJIANZHENG HU; LIANQIAO YANG; WOONG JOON HWANG et al.Journal of crystal growth. 2006, Vol 288, Num 1, pp 157-161, issn 0022-0248, 5 p.Conference Paper

Effect of substitution of nitrogen ions to red-emitting Sr₃B₂O_6-3/2xN_x:Eu²⁺ oxy-nitride phosphor for the application to white LEDSANG HOON JUNG; DONG SEOK KANG; DUK YOUNG JEON et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 116-119, issn 0022-0248, 4 p.Conference Paper

The effects of zinc on the characteristics of (Zn,Ca)TiO₃:Pr³⁺ phosphorsSUNG MOOK CHUNG; KANG, Seung-Youl; SHIN, Jae-Heon et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 94-97, issn 0022-0248, 4 p.Conference Paper

Fabrication of matrix-addressable micro-LED arrays based on a novel etch techniqueCHOI, H. W; JEON, C. W; DAWSON et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 527-530, issn 0022-0248, 4 p.Conference Paper

A review of III-nitride research at the Center for Quantum DevicesRAZEGHI, M; MCCLINTOCK, R.Journal of crystal growth. 2009, Vol 311, Num 10, pp 3067-3074, issn 0022-0248, 8 p.Conference Paper

Color tuning of organic light-emitting diodes by adjusting the ligands of heteroleptic iridium(III) complexesJI HYUN SEO; IN JUN KIM; YOUNG SIK KIM et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 113-115, issn 0022-0248, 3 p.Conference Paper

Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extractionKIM, Hong-Yeol; JUNG, Younghun; SUNG HYUN KIM et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 65-68, issn 0022-0248, 4 p.Conference Paper

GaAs_1-xBi_x light emitting diodesLEWIS, R. B; BEATON, D. A; XIANFENG. LU et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1872-1875, issn 0022-0248, 4 p.Conference Paper

Carrier injection efficiency in nitride LEDsLEE, Dong S; BYRNES, Daniel; PAREKH, Aniruddh et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5158-5161, issn 0022-0248, 4 p.Conference Paper

Performance of single use purifiers vs. regenerable purifiers for growth of high brightness gallium nitride LEDsTORRES, Robert; WATANABE, Tadaharu; VININSKI, Joseph et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 231-235, issn 0022-0248, 5 p.Conference Paper

Vertical Bridgman growth of sapphire crystals, with thin-neck formation processHOSHIKAWA, K; TAISHI, T; OHBA, E et al.Journal of crystal growth. 2014, Vol 401, pp 146-149, issn 0022-0248, 4 p.Conference Paper

Purification of Al(OH)₃ synthesized by Bayer process for preparation of high purity alumina as sapphire raw materialPARK, No-Kuk; CHOI, Hee-Young; KIM, Do-Hyeong et al.Journal of crystal growth. 2013, Vol 373, pp 88-91, issn 0022-0248, 4 p.Conference Paper

Characterization of berthelot-type behaviors of InGaN/GaN semiconductor heterosystemsNEE, Tzer-En; SHEN, Hui-Tang; WANG, Jen-Cheng et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 468-471, issn 0022-0248, 4 p.Conference Paper

Latest developments of large-diameter c-axis sapphire grown by CHES methodSCHWERDTFEGER, C. Richard; ULLAL, Saurabh; SHETTY, Raj et al.Journal of crystal growth. 2014, Vol 393, pp 123-128, issn 0022-0248, 6 p.Conference Paper

Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal-organic vapor phase epitaxyKOMIYAMA, Shigetoshi; NOGUCHI, Kazuyuki; SUZUKI, Shota et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5214-5216, issn 0022-0248, 3 p.Conference Paper

Depth dependence of optical property beyond the critical thickness of an InGaN filmTENG, Chih-Chung; WANG, Hsiang-Chen; TANG, Tsung-Yi et al.Journal of crystal growth. 2006, Vol 288, Num 1, pp 18-22, issn 0022-0248, 5 p.Conference Paper

Luminous properties of Sr_1-xZn_xSe:Eu²⁺ phosphors for LEDs applicationHONG JEONG YU; CHUNG, Wonkeun; SUN HEE PARK et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 77-80, issn 0022-0248, 4 p.Conference Paper

p-Type ZnO on sapphire by using O₂-N₂ co-activating and fabrication of ZnO LEDZHANG, Z. Z; WEI, Z. P; LU, Y. M et al.Journal of crystal growth. 2007, Vol 301-302, pp 362-365, issn 0022-0248, 4 p.Conference Paper

InAs-based quantum cascade light emitting structures containing a double plasmon waveguideOHTANI, K; SAKUMA, H; OHNO, H et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 718-722, issn 0022-0248, 5 p.Conference Paper

Vertical Bridgman growth of sapphire—Seed crystal shapes and seeding characteristicsHOSHIKAWA, K; OSADA, J; SAITOU, Y et al.Journal of crystal growth. 2014, Vol 395, pp 80-89, issn 0022-0248, 10 p.Article

Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substratesKELCHNER, Kathryn M; KURITZKY, Leah Y; FUJITO, Kenji et al.Journal of crystal growth. 2013, Vol 382, pp 80-86, issn 0022-0248, 7 p.Article

Optical investigations of Berthelot-type properties in quaternary AlInGaN multiple quantum well heterosystemsNEE, Tzer-En; WANG, Jen-Cheng; HUNG, Cheng-Wei et al.Journal of crystal growth. 2009, Vol 311, Num 13, pp 3544-3548, issn 0022-0248, 5 p.Article

Studies of improving light extraction efficiency of high power blue light-emitting diode by photo-enhanced chemical etchingFANG, H; KANG, X. N; HU, C. Y et al.Journal of crystal growth. 2007, Vol 298, pp 703-705, issn 0022-0248, 3 p.Conference Paper

Crystal growth technology CGT for energy : saving energy and renewable energySCHEEL, Hans J.Journal of crystal growth. 2005, Vol 275, Num 1-2, pp 331-337, issn 0022-0248, 7 p.Conference Paper