Modèle de calculs des coefficients d'absorption théorique de la cellule solaire n-CdS/p-CdTe = Calculation models of theoretical absorption coefficients of the solar cell n-CdS/p-CdTeNIASSE, O. A; MBENGUE, B; BA, B et al.Revue des énergies renouvelables. 2010, Vol 13, Num 2, pp 213-222, issn 1112-2242, 10 p.Article

Distortion of energy surfaces by a strain fieldSUZUKI, K.Progress of theoretical physics. Supplement. 1990, Num 101, pp 215-220, issn 0375-9687Article

An efficient strategy towards small bandgap polymers: the rigidification of the π-conjugated systemRONCALI, J; THOBIE-GAUTIER, C.Advanced materials (Weinheim). 1994, Vol 6, Num 11, pp 846-848, issn 0935-9648Article

Size dependence of electrical resistivity and energy band gap of semiconducting (Bi_0.4Sb_0.6)₂Te₃ thin filmsDAMODARA DAS, V; GOPAL GANESAN, P.SPIE proceedings series. 1998, pp 1157-1160, isbn 0-8194-2756-X, 2VolConference Paper

Lattice theory of C₃₆ : A carbon ellipsoidal cellMING ZANG.IEEE transactions on nanotechnology. 2006, Vol 5, Num 5, pp 422-429, issn 1536-125X, 8 p.Article

Inherent interference-filter polymer light-emitting diodesBARTA, P; BIRGERSON, J; GUO, S et al.Advanced materials (Weinheim). 1997, Vol 9, Num 2, pp 135-138, issn 0935-9648Article

Asymptotique de la largeur de la première bande de l'opérateur de Dirac avec potentiel périodique = Asymptote of the width of the first band of the Dirac operator with a periodic potentialMOHAMED, A; PARISSE, B; OUTASSOURT, A et al.Helvetica Physica Acta. 1993, Vol 66, Num 2, pp 192-215, issn 0018-0238Article

Quasi-elastic light scattering from electrons in semiconductors with nonparabolic energy bandsIPATOVA, I. P; VOITENKO, V. A.Physics reports. 1990, Vol 194, Num 5-6, pp 361-366, issn 0370-1573Article

Optical transitions in GaAs/AlAs superlattices with different miniband widthsFUJIWARA, K; KAWASHIMA, K; YAMAMOTO, T et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 889-892, issn 0038-1101Conference Paper

Thiophene-based conjugated oligomers and polymers with high electron affinityHOANG ANH HO; BRISSET, H; EL HADJ ELANDALOUSSI et al.Advanced materials (Weinheim). 1996, Vol 8, Num 12, pp 990-994, issn 0935-9648Article

Negative electron affinity silicon heterojunction photocathodes with alkali antimonide intermediate layersTAILIANG GUO.Journal of applied physics. 1992, Vol 72, Num 9, pp 4384-4389, issn 0021-8979Article

Electronic structure of the Si(111)√3 x √3 surface with column V adatomsNAGAYOSHI, H.Surface science. 1990, Vol 234, Num 3, pp 371-376, issn 0039-6028Article

Studies on electronic processes in graphite during the last decade in JapanTSUZUKU, T.Carbon (New York, NY). 1983, Vol 21, Num 4, pp 415-427, issn 0008-6223Article

Studies on electronic processes in graphite during the last decade in JapanTSUZUKU, T.International symposium on carbon. Carbon society of Japan. Annual meeting. 9. 1982, pp 276-279Conference Paper

On the treatment of 4p semi-core states in molybdenumBUCK, S; HUMMLER, K; FÄHNLE, M et al.Physica status solidi. B. Basic research. 1996, Vol 195, Num 2, pp K9-K11, issn 0370-1972Article

Particularités du comportement du spectre de bandes d'énergie et fonctions d'onde d'un électron canaliséTULUPOV, A. V.Fizika tverdogo tela. 1984, Vol 26, Num 1, pp 96-99, issn 0367-3294Article

Mechanisms of the reversible electrochemical insertion of lithium occurring with NCIMs (nano-crystallite-insertion-materials)HAN, S. D; TREUIL, N; CAMPET, G et al.Active and passive electronic components. 1994, Vol 16, Num 2, pp 113-117, issn 0882-7516Article

An explanation of field-enhanced non-equilibrium transients of pulsed MOS capacitorsXIUMIAO ZHANG.Semiconductor science and technology. 1993, Vol 8, Num 4, pp 555-559, issn 0268-1242Article

On the Mott-Hubbard band in La₂CuO₄KATAOKA, M; IKEBE, M.Progress of theoretical physics. Supplement. 1990, Num 101, pp 381-390, issn 0375-9687Article

Effects of energyband structure on the optical gain spectra of InGaAsP quaternary semiconductorGUO CHANGZHI; HUANG YONGZHEN.Chinese physics. 1987, Vol 7, Num 3, pp 842-853, issn 0273-429XArticle

Pressure induced semiconducting to metallic transition in TeSINGH, D. B; VARANDANI, D; HUSAIN, M et al.SPIE proceedings series. 1998, pp 1263-1266, isbn 0-8194-2756-X, 2VolConference Paper

Energy band structure of quantum-size metal-oxide-semiconductor field effect transistorFU, Y; KARLSTEEN, M; WILLANDER, M et al.Superlattices and microstructures. 1997, Vol 22, Num 3, pp 405-410, issn 0749-6036Article

The Einstein relation in zero-gap semiconductorsBISWAS, S. N; GHATAK, K. P.International journal of electronics. 1992, Vol 73, Num 2, pp 287-293, issn 0020-7217Article

THE BAND STRUCTURE OF MOLYBDENUM DISULPHIDE FROM THE ANGULAR VARIATION OF UV STIMULATED PHOTOELECTRIC EMISSIONWILLIAMS RH; THOMAS JM; BARBER M et al.1972; CHEM. PHYS. LETTERS; NETHERL.; DA. 1972; VOL. 17; NO 1; PP. 142-144; BIBL. 13 REF.Serial Issue

NEGATIVE AFFINITY PHOTOCATHODE RESEARCH AND TECHNOLOGY.SPICER WE.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.: 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 57-59; BIBL. 13 REF.Conference Paper