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Crystallization of ferroelectric bismuth vanadate in Bi₂O₃-V₂O₅-SrB₄O₇ glassesSHANKAR, M. V; VARMA, K. B. R.Journal of non-crystalline solids. 1998, Vol 226, Num 1-2, pp 145-154, issn 0022-3093Article

Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin filmsWATANABE, Takayuki; FUNAKUBO, Hiroshi.Journal of solid state chemistry (Print). 2005, Vol 178, Num 1, pp 64-71, issn 0022-4596, 8 p.Article

Influence of cation substitution on the phase formation kinetics of Sr_0.7Bi_2.3Ta₂O₉ thin filmsKWAK, Woo-Chul; SUNG, Yun-Mo.Journal of the European Ceramic Society. 2004, Vol 24, Num 6, pp 1603-1606, issn 0955-2219, 4 p.Conference Paper

Two relaxation mechanisms in (Sr_1-1.5xBi_x)TiO₃(x:0.0067)SENTÜRK, E.Solid-state electronics. 2005, Vol 49, Num 6, pp 935-939, issn 0038-1101, 5 p.Article

Effects of recovery annealing on reliability of SrBi₂Ta₂O₉ based ferroelectric memory devicesKOO, June-Mo; JIYOUNG KIM; LEE, Eun-Gu et al.Journal of materials science letters. 2002, Vol 21, Num 8, pp 653-655, issn 0261-8028Article

Softchemical synthesis and conduction properties of new layered bismuth-based compound incorporated with silver and iodine elementsMATSUDA, Motohide; ABE, Keiko; MIYAKE, Michihiro et al.Solid state ionics. 2002, Vol 154-5, pp 413-418, issn 0167-2738, 6 p.Conference Paper

Impedance-fatigue correlated studies on SrBi₂Ta₂O₉JAMES, A. R; BALAJI, S; KRUPANIDHI, S. B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 64, Num 3, pp 149-156, issn 0921-5107Article

Preparation and dielectric properties of SrBi₂Ta₂O₉ thin films by sol-gel methodHAYASHI, T; HARA, T; SAWAYANAGI, S et al.Journal of the European Ceramic Society. 1999, Vol 19, Num 6-7, pp 1497-1500, issn 0955-2219Conference Paper

The effect of cation place exchange on the electrical conductivity of SrBi₂M₂O₉ (M = Ta, Nb)PALANDUZ, C. A; SMYTH, D. M.Journal of the European Ceramic Society. 1999, Vol 19, Num 6-7, pp 731-735, issn 0955-2219Conference Paper

Dielectric relaxation behaviour of Bi:SrTiO₃: I. The low temperature permittivity peakYU ZHI; ANG CHEN; VILARINHO, P. M et al.Journal of the European Ceramic Society. 1998, Vol 18, Num 11, pp 1613-1619, issn 0955-2219Article

Preparation of SrBi₂Ta₂O₉ thin films with a single alkoxide sol-gel precursorYONGTAE KIM; CHAE, H. K; LEE, K. S et al.Journal of material chemistry. 1998, Vol 8, Num 11, pp 2317-2319, issn 0959-9428Article

The crystallization path of SrBi₂Ta₂O₉ from Sr-Bi-Ta-O mod precursorsTANAKA, M; WATANABE, K; KATORI, K et al.Materials research bulletin. 1998, Vol 33, Num 5, pp 789-794, issn 0025-5408Article

Sol-gel processing of bismuth strontium tantalate thin filmsTUREVSKAYA, E. P; VOROTILOV, K. A; BERGO, V. B et al.Journal de physique. IV. 1998, Vol 8, Num 9, pp Pr9.83-Pr9.86, issn 1155-4339Conference Paper

Pulsed laser deposition of epitaxial SrBi₂Ta₂O₉ films with controlled orientationGARG, Ashish; BARBER, Zoe H.Ferroelectrics (Print). 2002, Vol 268, pp 89-94, issn 0015-0193Conference Paper

No volatilidad en láminas ferroeléctricas de SBT a 75°C = Non-volatility of ferroelectric SBT thin fims, at 75°CJIMENEZ, R; GONZALEZ, A; ALEMANY, C et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2002, Vol 41, Num 1, pp 22-26, issn 0366-3175Conference Paper

SrBi₂Ta₂O₉ has only two polar axes - a problem for high density ferroelectric memory devicesFRANKE, K; MARTIN, G; WEIHNACHT, M et al.Solid state communications. 2001, Vol 119, Num 3, pp 117-119, issn 0038-1098Article

Effects of the Sr content on the ferroelectric characteristics of Sr_xBi_2.4Ta₂O₉ filmsJOO DONG PARK; TAE SUNG OH.Journal of materials science letters. 2000, Vol 19, Num 19, pp 1693-1696, issn 0261-8028Article

Effect of oxygen plasma on growth, structure and ferroelectric properties of SrBi₂Ta₂O₉ thin films formed by pulsed laser ablation techniqueTIRUMALA, S; RASTOGI, A. C; DESU, S. B et al.Journal of electroceramics. 2000, Vol 5, Num 1, pp 7-20, issn 1385-3449Article

Group theoretical analysis of the domain structure of SrBi₂Ta₂O₉ ferroelectric ceramicCHEN, X. J; LIU, J. S; ZHU, J. S et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 16, pp 3745-3749, issn 0953-8984Article

Low-temperature preparation of Sr_xBi_2+yTa₂O₉ ferroelectric thin film by pulsed laser deposition and its application to a metal-ferroelectric-nitride-oxide-semiconductor structureNODA, M; ADACHI, Y; SUGIYAMA, H et al.Applied physics. A, Materials science & processing (Print). 2000, Vol 71, Num 1, pp 113-116, issn 0947-8396Article

Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD)ROEDER, J. F; HENDRIX, B. C; NAGEL, N et al.Journal of the European Ceramic Society. 1999, Vol 19, Num 6-7, pp 1463-1466, issn 0955-2219Conference Paper

Photoconductivity of SrBi₂Ta₂O₉ thin filmsPINTILIE, L; ALEXE, M.Journal of the European Ceramic Society. 1999, Vol 19, Num 6-7, pp 1485-1488, issn 0955-2219Conference Paper

Chemical fabrication SrBi₄Ti₄O₁₅ thin filmsNIBOU, L; AFTATI, A; EL FARISSI, M et al.Journal of the European Ceramic Society. 1999, Vol 19, Num 6-7, pp 1383-1386, issn 0955-2219Conference Paper

Dielectric relaxation behaviour of Bi:SrTiO₃: III. Dielectric properties in the temperature range of 300-600 KYU ZHI; ANG CHEN; VILARINHO, P. M et al.Journal of the European Ceramic Society. 1998, Vol 18, Num 11, pp 1629-1635, issn 0955-2219Article