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Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-κ MOSFETsJO, Minseok; KIM, Seonghyun; JUNG, Seungjae et al.IEEE electron device letters. 2010, Vol 31, Num 4, pp 287-289, issn 0741-3106, 3 p.Article

Threshold Voltage and Mobility Extraction by Ultrafast Switching Measurement on NBTIHU, Y. Z; ANG, D. S; TEO, Z. Q et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 8, pp 2027-2031, issn 0018-9383, 5 p.Article

NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse MeasurementZHIGANG JI; LIN, L; JIAN FU ZHANG et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 1, pp 228-237, issn 0018-9383, 10 p.Article

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction―Diffusion to Switching Oxide TrapsGRASSER, Tibor; KACZER, Ben; NELHIEBEL, Michael et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 11, pp 3652-3666, issn 0018-9383, 15 p.Article

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Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFETBROWN, Andrew R; HUARD, Vincent; ASENOV, Asen et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 9, pp 2320-2323, issn 0018-9383, 4 p.Article

Effect of Oxygen Postdeposition Annealing on Bias Temperature Instability of Hafnium Silicate MOSFETJO, Minseok; PARK, Hokyung; LEE, Joon-Myoung et al.IEEE electron device letters. 2008, Vol 29, Num 4, pp 399-401, issn 0741-3106, 3 p.Article

New Insight Into NBTI Transient Behavior Observed From Fast-G_M MeasurementsCAMPBELL, J. P; CHEUNG, Kin P; SUEHLE, John S et al.IEEE electron device letters. 2008, Vol 29, Num 9, pp 1065-1067, issn 0741-3106, 3 p.Article

Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film TransistorsSUN, Hung-Chang; HUANG, Ching-Fang; CHEN, Yen-Ting et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 11, pp 3186-3189, issn 0018-9383, 4 p.Article

NBTI model development with regression analysisKATSETOS, Anastasios A; BRENDLER, Andrew C.Microelectronics and reliability. 2009, Vol 49, Num 12, pp 1498-1502, issn 0026-2714, 5 p.Article

Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect TransistorsWEN JUN LIU; XIAO WEI SUN; HONG YU YU et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 8, pp 2682-2686, issn 0018-9383, 5 p.Article

Bias-Temperature-Stress Characteristics of ZnO/HfO₂ Thin-Film TransistorsSIDDIQUI, Jeffrey J; PHILLIPS, Jamie D; LEEDY, Kevin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 5, pp 1488-1493, issn 0018-9383, 6 p.Article

An Analysis of the NBTI-Induced Threshold Voltage Shift Evaluated by Different TechniquesZHIGANG JI; JIAN FU ZHANG; MO HUAI CHANG et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 5, pp 1086-1093, issn 0018-9383, 8 p.Article

Reliability Mechanisms of LTPS-TFT With HfO₂ Gate Dielectric : PBTI, NBTI, and Hot-Carrier StressMA, Ming-Wen; CHEN, Chih-Yang; WU, Woei-Chemg et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 5, pp 1153-1160, issn 0018-9383, 8 p.Article

Impact of negative bias temperature instability on product parametric driftREDDY, Vijay; CARULLI, John; KRISHNAN, Anand et al.International Test Conference. 2004, pp 148-155, isbn 0-7803-8580-2, 1Vol, 8 p.Conference Paper

Methodology for Determination of Process Induced BTI Variability in MG/HK CMOS Technologies Using a Novel Matrix Test StructureKERBER, Andreas.IEEE electron device letters. 2014, Vol 35, Num 3, pp 294-296, issn 0741-3106, 3 p.Article

Are Interface State Generation and Positive Oxide Charge Trapping Under Negative-Bias Temperature Stressing Correlated or Coupled?HO, T. J. J; ANG, D. S; BOO, A. A et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1013-1022, issn 0018-9383, 10 p.Article

Evolution of Hole Trapping in the Oxynitride Gate p-MOSFET Subjected to Negative-Bias Temperature StressingBOO, A. A; ANG, D. S.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 11, pp 3133-3136, issn 0018-9383, 4 p.Article

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Temperature Dependence and Postirradiation Annealing Response of the 1/f Noise of 4H-SiC MOSFETsCHER XUAN ZHANG; XIAO SHEN; EN XIA ZHANG et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 7, pp 2361-2367, issn 0018-9383, 7 p.Article

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TiN Thickness Impact on BTI PerformanceCHEN, Chien Liang; KING, Ya-Chin.IEEE electron device letters. 2011, Vol 32, Num 6, pp 707-709, issn 0741-3106, 3 p.Article

On the dynamic NBTI of the HfO₂ and HfSiON P-MOSFETGAO, Y; ANG, D. S; BOO, A. A et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1392-1395, issn 0167-9317, 4 p.Conference Paper