First-principles study of spontaneous polarization in SrBi₂Ta₂O₉HUA KE; WEN WANG; ZHENXING ZHENG et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 1, issn 0953-8984, 015901.1-015901.5Article

Electronic structure difference of stoichiometric and off-stoichiometric SBTOZKENDIR, O. M; BOZGEYIK, M. S.The European physical journal. B, Condensed matter physics (Print). 2010, Vol 76, Num 2, pp 203-208, issn 1434-6028, 6 p.Article

Impedance spectroscopy and conductivity studies in SrBi₂(Ta_1―xW_x)₂O₉ ferroelectric ceramicsCOONDOO, Indrani; PANWAR, Neeraj; TOMAR, Amit et al.Physica. B, Condensed matter. 2012, Vol 407, Num 24, pp 4712-4720, issn 0921-4526, 9 p.Article

Ferroelectric SrBi2Ta2O9 Thin Film Studied by Micro-Raman Scattering and Atomic Force MicroscopySAKAI, Akira; YOSHIE, Toshiharu.Ferroelectrics (Print). 2011, Vol 416, pp 53-57, issn 0015-0193, 5 p.Conference Paper

Influence of Tungsten Doping on the Ferroelectric Behavior of Sr_0.8Bi_2.3Ta₂O₉ Thin FilmsSANTIAGO, M. L; MACHADO, R; STACHIOTTI, M. G et al.Ferroelectrics (Print). 2010, Vol 406, pp 168-175, issn 0015-0193, 8 p.Conference Paper

Investigation on microstructure, dielectric and impedance properties of Sr_1-xBi_{2+ (2/3)x}(V_xTa_1-x)₂O₉ [x = 0, 0.1 and 0.2] ceramicsSRIDARANE, R; SUBRAMANIAN, S; JANANI, N et al.Journal of alloys and compounds. 2010, Vol 492, Num 1-2, pp 642-648, issn 0925-8388, 7 p.Article

Microstructures and impedance studies of Bi_3.15Nd_0.85Ti₃O₁₂ thin filmsDI WU; AIDONG LI.Applied physics. A, Materials science & processing (Print). 2009, Vol 95, Num 2, pp 517-521, issn 0947-8396, 5 p.Article

Memory Properties of SrBi₂Ta₂O₉ Ferroelectric Thin Film Prepared on Si0₂/Si SubstrateTZOU, Wen-Cheng; CHEN, Kai-Huang; YANG, Cheng-Fu et al.Ferroelectrics (Print). 2009, Vol 385, pp 54-61, issn 0015-0193, 8 p.Conference Paper

Preparation and ferroelectric properties of barium-ion-doped strontium bismuth tantalate thin filmsLU, Chung-Hsin; CHANG, Da-Pong.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 2-3, pp 480-484, issn 0022-3697, 5 p.Conference Paper

Structural and Dielectric Investigations of Bismuth Excess Strontium Bismuth Tantalate Ferroelectric CeramicsJHA, A. K; SUGANDHA.Ferroelectrics (Print). 2011, Vol 421, pp 1-8, issn 0015-0193, 8 p.Conference Paper

Comparing macroscopic and microscopic properties of seeded ferroelectric thin filmsAIYING WU; GONZALEZ-AGUILAR, G; VILARINHO, P. M et al.Journal of electroceramics. 2008, Vol 21, Num 1-4, pp 193-197, issn 1385-3449, 5 p.Conference Paper

Properties of Pb(Zr_0.52Ti_0.48)O₃, SrBi₂Ta₂O₉, and Nd₂Ti₂O₇ in a MFIS of Y₂O₃ Insulator Base Structure for Fe FETKIM, Woo-Sic; LEE, Hong-Sub; PARK, Hyung-Ho et al.Ferroelectrics (Print). 2011, Vol 413, pp 1-10, issn 0015-0193, 10 p.Article

Characteristics of SrTiO₃ Insulated Layer in SBT Ferroelectric Thin FilmsCHOU, Hsiu-Yu; LEE, En-Ko; LIN, Meng-Han et al.Ferroelectrics (Print). 2009, Vol 382, pp 92-99, issn 0015-0193, 8 p.Conference Paper

Phase transition sequence in ferroelectric Aurivillius compounds investigated by single crystal X-ray diffractionBOULLAY, P; TELLIER, J; MERCURIO, D et al.Solid state sciences. 2012, Vol 14, Num 9, pp 1367-1371, issn 1293-2558, 5 p.Article

Fabrication of Ferroelectric Microstructures by Electron-Beam-Induced Patterning ProcessFUJII, Tadashi; KAWACHI, Tomoyasu; ADACHI, Masatoshi et al.Ferroelectrics (Print). 2010, Vol 406, pp 16-23, issn 0015-0193, 8 p.Conference Paper

The Role of Trilinear Couplings in the Phase Transitions of Aurivillius CompoundsETXEBARRIA, I; PEREZ-MATO, J. M; BOULLAY, P et al.Ferroelectrics (Print). 2010, Vol 401, pp 17-23, issn 0015-0193, 7 p.Conference Paper

Bonding mechanism and relaxation energy of SrBi₂B₂O₉ (B = Ta, Nb): First-principles studySHU, H. B; SUN, L. Z; ZHONG, X. L et al.The Journal of physics and chemistry of solids. 2009, Vol 70, Num 3-4, pp 707-712, issn 0022-3697, 6 p.Article

Electrical properties of ferroelectric-gate FETs with SrBi₂Ta₂O₉ formed using MOCVD techniqueKANG YAN; TAKAHASHI, Mitsue; SAKAI, Shigeki et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 108, Num 4, pp 835-842, issn 0947-8396, 8 p.Article

Structural and impedance spectroscopy of pseudo-co-ablated (SrBi₂Ta₂O₉)_(1-x)-(La_0.67Sr_0.33MnO₃)_x compositesMAITY, S; BHATTACHARYA, D; RAY, S. K et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 9, issn 0022-3727, 095403.1-095403.10Article

Relationship between average and local crystal structure and the ferroelectric properties of a Sr-Bi-Ta-Si-O ferroelectric materialIDEMOTO, Yasushi; TANIYAMA, Satoshi; IIKUBO, Satoshi et al.The Journal of physics and chemistry of solids. 2009, Vol 70, Num 8, pp 1156-1165, issn 0022-3697, 10 p.Article

Effect of non-stoichiometry on ferroelectricity and piezoelectricity in strontium bismuth tantalate ceramicsFUJIOKA, Chie; AOYAGI, Rintaro; TAKEDA, Hiroaki et al.Journal of the European Ceramic Society. 2005, Vol 25, Num 12, pp 2723-2726, issn 0955-2219, 4 p.Conference Paper

Microstructural studies on the low-temperature crystallization process of strontium bismuth tantalate thin filmsRICOTE, Jesus; CALZADA, M. Lourdes; GONZALEZ, Ana et al.Journal of the American Ceramic Society. 2004, Vol 87, Num 1, pp 138-143, issn 0002-7820, 6 p.Article

Sol-Gel synthesis of SrBi₂Ta₂O₉ nanowiresWEN WANG; HUA KE; RAO, Jian-Cun et al.Journal of alloys and compounds. 2010, Vol 504, Num 2, pp 367-370, issn 0925-8388, 4 p.Article

Nanoscale properties of ferroelectric ultrathin SBT filmsJIMENEZ, R; CALZADA, M. L; GONZALEZ, A et al.Journal of the European Ceramic Society. 2004, Vol 24, Num 2, pp 319-323, issn 0955-2219, 5 p.Conference Paper

Structural and electrical properties of metal-ferroelectric-insulator-semiconductor structure of Al/SrBi₂Ta₂O₉/HfO₂/Si using HfO₂ as buffer layerROY, A; DHAR, A; BHATTACHARYA, D et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 9, issn 0022-3727, 095408.1-095408.6Article