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OPTICALLY PUMPED SEMICONDUCTOR PLATELET LASERSROXLO CB; PUTNAM RS; SALOUR MM et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 3; PP. 338-342; BIBL. 21 REF.Article

PBO/CD(S, SE): CU MIXED PHOTOCONDUCTOR SYSTEM FOR ELECTROPHOTOGRAPHYNAVNEET; PILLAI PKC.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 1; PP. 508-510; BIBL. 10 REF.Article

Photocatalytic hydrogen evolution from aqueous solutions of sodium sulfite using platinum-loaded CdS_1-xSe_x mixed crystal powderUCHIHARA, T; ABE, H; MATSUMURA, M et al.Bulletin of the Chemical Society of Japan. 1989, Vol 62, Num 4, pp 1042-1046, issn 0009-2673, 5 p.Article

Aufbau, Eigenschaften und Einsatz von Cd-Sulfoselenid-Einschlusspigmenten = Préparation, propriétés et mise en œuvre de pigments d'inclusion de sulfoséléniure de Cd = Preparation, properties and use of Cd-sulfoselenide inclusion pigmentsVÖLKER, W.Sprechsaal (1976). 1985, Vol 118, Num 10, pp 962-967, issn 0341-0676Article

N₂ laser pumped CdS_xSe_1-x platelet laserSENONER, M; VOIGT, J.Experimentelle Technik der Physik. 1985, Vol 33, Num 5, pp 387-396, issn 0014-4924Article

Nanocrystallites vibration modes of CdS_xSe_1-x semiconductors in glasses : size determination by Raman scatteringCHAMPAGNON, B; ANDRIANASOLO, B; DUVAL, E et al.The Journal of chemical physics. 1991, Vol 94, Num 7, pp 5237-5239, issn 0021-9606, 3 p.Article

Time-resolved spectroscopy of spontaneous luminescence of CdSSe_1-x quantum dotsBUGAYEV, A; KALT, H; KUHL, J et al.Applied physics. A, Solids and surfaces. 1991, Vol 53, Num 1, pp 75-80, issn 0721-7250, 6 p.Article

Neue Palette farbiger Glasuren = Nouvelle gamme de glaçures colorées = New range of coloured glazesVÖLKER, W.Keramische Zeitschrift. 1987, Vol 39, Num 8, pp 514-515, issn 0023-0561Article

Michler's ketone-Cd(S,Se): Cu mixed photoconductor system for electrophotographyPILLAI, P. K. C; SHARMA, P. K; TRIPATHI, A. K et al.Surface & coatings technology. 1986, Vol 28, Num 1, pp 25-32, issn 0257-8972Article

Photoluminescence response of palladium-cadmium sulfide and palladium-guaded cadmium sulfoselenide Schottky diodes to molecular hydrogenCARPENTER, M. K; VAN RYSWYK, H; ELLIS, A. B et al.Langmuir. 1985, Vol 1, Num 5, pp 605-607, issn 0743-7463Article

Thermooptical effects observed in CdS_xSe_1-x semiconductor doped glassesTHIBAULT, G; DENARIEZ-ROBERGE, M.-M.Canadian journal of physics (Print). 1985, Vol 63, Num 2, pp 198-201, issn 0008-4204Article

ISOELECTRONIC IMPURITY TE IN CDS_1-XSE_X MIXED CRYSTALSGOEDE O; HEIMBRODT W.1982; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982; VOL. 110; NO 1; PP. 175-182; BIBL. 14 REF.Article

PHOTOLUMINESCENCE AND ELECTROMUMINESCENCE IN GRADED CADMIUM SULFOSELENIDE ELECTRODES: APPLICATIONS TO PHOTOELECTROCHEMICAL CELLSCARPENTER MK; STRECKERT HH; ELLIS AB et al.1982; J. SOLID STATE CHEM.; ISSN 0022-4596; GBR; DA. 1982; VOL. 45; NO 1; PP. 51-62; BIBL. 36 REF.Article

LUMINESCENT PHOTOELECTROCHEMICAL CELLS. VII: PHOTOLUMINESCENT AND ELECTROLUMINESCENT PROPERTIES OF CADMIUM SULFO-SELENIDE ELECTRODESSTRECKERT HH; JIU RU TONG; CARPENTER MK et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 772-780; BIBL. 25 REF.Article

COMPOSITION CONTROL OF CDS_XSE_1-X THIN LAYERS GROWN ON CDS SUBSTRATE BY A SOLID-STATE DIFFUSION TECHNIQUEMOCHIZUKI K.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PART. 1; PP. 639-642; BIBL. 11 REF.Article

STRUCTURE ET COMPOSITION DE PHASES DES PRECIPITES ET COUCHES DU SYSTEME CDS-CDSEDVOJNIN VI; YATLOVA LE; PANKRATOV AN et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 10; PP. 1749-1752; BIBL. 5 REF.Article

EPITAXIAL GROWTH OF CDS AND CDS_1-YSE_Y THIN FILMS BY HYDROGEN TRANSPORT FROM THE ELEMENTS AND THEIR PHOTOLUMINESCENT PROPERTIESCLAYBOURN M; SCOTT MD; WILLIAMS JO et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 2; PP. 417-424; BIBL. 27 REF.Article

FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDS_XSE_1-XCOHEN E; STURGE MD.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 6; PP. 3828-3840; BIBL. 37 REF.Article

MAPPING THE EFFICIENCY OF ELECTRON-HOLE PAIR SEPARATION FOR A SEMICONDUCTOR ELECTRODE. LUMINESCENT PROPERTIES OF GRADED CADMIUM SULFOSELENIDE ELECTRODESSTRECKERT HH; ELLIS AB.1982; J. PHYS. CHEM.; ISSN 0022-3654; USA; DA. 1982; VOL. 86; NO 25; PP. 4921-4926; BIBL. 25 REF.Article

CROISSANCE DES CRISTAUX MIXTES CDS_1-XSE_X A PARTIR DE LA PHASE GAZEUSEKAZENNOV BA; CHERNYSHEVA VF.1983; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1983; VOL. 28; NO 2; PP. 409-411; BIBL. 9 REF.Article

ORDRE A COURTE DISTANCE DANS LES SOLUTIONS SOLIDES A BASE DE CHALCOGENURES DE CADMIUMSANITAROV VA; TARATYNOV SI; ALEKSANDROVA LA et al.1982; ZURNAL FIZICESKOJ HIMII; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 9; PP. 2160-2162; BIBL. 11 REF.Article

Diffusion Raman de résonance de la lumière dans des solutions solides de semiconducteurs. Influence des constantes des polaronsVALAKH, M. YA; LITVINCHUK, A. P.Fizika tverdogo tela. 1985, Vol 27, Num 7, pp 1958-1961, issn 0367-3294Article

Optical and photoelectrical properties of CdS_xSe_1-x films produced by screen-printing technologyTIVANOV, M; OSTRETSOV, E; DROZDOV, N et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 5, pp 1694-1699, issn 0370-1972, 6 p.Conference Paper

Red-yellow CdSSe-ZnS SLs and blue-green SrS and CdSSe-SrS SLs double insulating EL devices prepared by hot wall epitaxyFUJIYASU, H; TAKEUCHI, Y; HIKIDA, K et al.Applied surface science. 1993, Vol 65-66, pp 455-460, issn 0169-4332Conference Paper