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A STUDY OF THE PHOTOCONDUCTING PROPERTIES OF CDSSE(CU) WITH A VIEW TO ITS USE IN SOLID-STATE IMAGE INTENSIFIERSPILLAI PKC; SHROFF N; TRIPATHI AK et al.1983; JOURNAL OF PHYSICS D: APPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1983; VOL. 16; NO 3; PP. 393-399; BIBL. 13 REF.Article

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MULTIKILOVOLT PICOSECOND OPTOELECTRONIC SWITCHING IN CDS_0.5SE_0.5MATHUR VK; CHANG CS; WEI LOU CAO et al.1982; IEEE J. QUANTUM. ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 2; PP. 205-209; BIBL. 11 REF.Article

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PHOTOLUMINESCENCE DES SOLUTIONS SOLIDES A BASE DE SULFURES ET SELENIURES DE CADMIUMERMOLOVICH IB; VITRIKHOVSKIJ NI; GEORGIEVA II et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 5; PP. 907-914; BIBL. 34 REF.Article

EMISSION OF LOCALIZED EXCITONS IN MIXED CDS_1-XSE_X CRYSTALSPERMOGOROV S; REZNITSKII A; TRAVNIKOV V et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 106; NO 1; PP. K57-K60; BIBL. 11 REF.Article

DEEP LEVEL TRANSIENT SPECTROSCOPY OF ELECTRON TRAPS AND SENSITIZING CENTERS IN UNDOPED CDS SINGLE CRYSTALSHUSSEIN M; LLETI G; SAGNES G et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 261-268; BIBL. 32 REF.Article

THE DIFFUSION OF CHALCOGEN IN CDS_1-XSE_XNAKANO M; IGAKI K.1982; TRANS. JPN. INST. MET.; ISSN 0021-4434; JPN; DA. 1982; VOL. 23; NO 3; PP. 103-107; BIBL. 10 REF.Article

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Aufbau, Eigenschaften und Einsatz von Cd-Sulfoselenid-Einschlusspigmenten = Préparation, propriétés et mise en œuvre de pigments d'inclusion de sulfoséléniure de Cd = Preparation, properties and use of Cd-sulfoselenide inclusion pigmentsVÖLKER, W.Sprechsaal (1976). 1985, Vol 118, Num 10, pp 962-967, issn 0341-0676Article

N₂ laser pumped CdS_xSe_1-x platelet laserSENONER, M; VOIGT, J.Experimentelle Technik der Physik. 1985, Vol 33, Num 5, pp 387-396, issn 0014-4924Article

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LUMINESCENCE POLARISEE D'EXCITONS LOCALISES DANS LES SOLUTIONS SOLIDES CDS_1-XSE_XVERBIN S YU; PERMOGOROV SA; REZNITSKIJ AN et al.1983; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1983; VOL. 25; PP. 346-352; BIBL. 15 REF.Article

OPTICALLY PUMPED SEMICONDUCTOR PLATELET LASERSROXLO CB; PUTNAM RS; SALOUR MM et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 3; PP. 338-342; BIBL. 21 REF.Article

STRUCTURAL AND OPTICAL PROPERTIES OF SOLUTION GROWN CDSE_1-XS_X FILMSKAINTHLA RC; PANDYA DK; CHOPRA KL et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 1; PP. 99-102; BIBL. 19 REF.Article

EXPLICATION DES SPECTRES DE RAIES DE LA PHOTOCONDUCTIVITE D'IMPURETE INDUITE DANS CDS-CDSE PAR DES REPRESENTATIONS DE MOLECULES DE DONNEURSRIZAKHANOV MA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 4; PP. 699-702; BIBL. 10 REF.Article

Nanocrystallites vibration modes of CdS_xSe_1-x semiconductors in glasses : size determination by Raman scatteringCHAMPAGNON, B; ANDRIANASOLO, B; DUVAL, E et al.The Journal of chemical physics. 1991, Vol 94, Num 7, pp 5237-5239, issn 0021-9606, 3 p.Article

STUDY OF THE MECHANISM OF FORMATION OF A ZIRCON-CADMIUM SULPHASELENIDE PIGMENTLAMBIES LAVILLA V; RINCO LOPEZ JM.1981; TRANS. J. BR. CERAM. SOC.; ISSN 0307-7357; GBR; DA. 1981; VOL. 80; NO 3; PP. 105-108; ABS. FRE/GER; BIBL. 45 REF.Article

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LUMINESCENCE OF EXCITONS BOUND BY DISORDER-POTENTIAL FLUCTUATIONS IN CDS_1-XSE_X: SPATIAL DIFFUSION, EXCITATION LEVEL DEPENDENCE, AND KINETICSAGEKYAN V; BINDEMANN R; SCHWABE R et al.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 116; NO 1; PP. K43-K46; BIBL. 4 REF.Article