PREDISTORSION TECHNIQUE FOR THE MEASUREMENT OF TRANSFER INEFFICIENCY OF CHARGE-TRANSFER DEVICESDUTTA ROY SC; DAS VG.1978; PROC. I.E.E.E.; USA; DA. 1978; VOL. 66; NO 5; PP. 601-602; BIBL. 4 REF.Article

AN INSULATED-GATE CHARGE TRANSFER DEVICE ON INPLILE DL; COLLINS DA.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 552-553; BIBL. 9 REF.Article

CHARACTERIZATION OF CHARGE-TRANSFER DEVICES WITH VARIABLE TRANSFER INEFFICIENCYBARSAN RM.1979; REV. ROUMAINE PHYS.; ROM; DA. 1979; VOL. 24; NO 5; PP. 471-485; ABS. FRE; BIBL. 32 REF.Article

SOLID STATE IMAGE SENSORS USING THE CHARGE TRANSFER PRINCIPLE.VAN SANTEN JG.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 365-371; BIBL. 20 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

EXTENSIONS OF THE SCHARFETTER-GUMMEL APPROACH TO CHARGE TRANSFERLAVINE JP; BURKEY BC.1980; SOLID. STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 75-77; BIBL. 8 REF.Article

BEHANDLUNG DER LADUNGSUEBERTRAGUNG IM 2-PHASEN-OBERFLAECHEN-CCD MIT HILFE DIGITALER SIMULATION = ETUDE DES TRANSFERTS DE CHARGES DANS LES DISPOSITIFS A COUPLAGE DE CHARGE (CCD) A DEUX PHASES PAR SIMULATION SUR ORDINATEURRHEIN D; UHLMANN H.1980; NACHR.-TECH., ELEKTRON.; DDR; DA. 1980; VOL. 30; NO 4; PP. 160-164; BIBL. 4 REF.Article

AN EVALUATION OF SUBMICROMETER POTENTIAL BARRIERS USING CHARGE-TRANSFER DEVICESTAYLOR GW; CHATTERJEE PK.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1579-1585; BIBL. 6 REF.Article

CHARGE-TRANSFER NOIRE THEORY FOR SURFACE-CHANNEL CHARGE-COUPLED DEVICESOMURA Y; OHWADA K.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1816-1824; BIBL. 16 REF.Article

THEORETICAL ANALYSIS OF CHARGE TRANSFER LOSS ARISING FROM INTERFACE STATES IN CHARGE COUPLED DEVICES.HEALD DL.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 657-663; BIBL. 10 REF.Article

PICOSECOND LASER PHOTOLYSIS STUDIES OF FLUORESCENCE QUENCHING MECHANISMS OF FLAVIN: A DIRECT OBSERVATION OF INDOLE-FLAVIN SINGLET CHARGE TRANSFER STATE FORMATION IN SOLUTIONS AND FLAVOENZYMESKAREN A; IKEDA N; MATAGA N et al.1983; PHOTOCHEMISTRY AND PHOTOBIOLOGY; ISSN 0031-8655; GBR; DA. 1983; VOL. 37; NO 5; PP. 495-502; BIBL. 26 REF.Article

CHARACTERIZATION OF CHARGE-TRANSFER DEVICES WITH POSITION-DEPENDENT SMALL-SIGNAL TRANSFER INEFFICIENCYBARSAN RM.1980; INTERNATION. J. ELECTRON.; GBR; DA. 1980; VOL. 48; NO 2; PP. 149-164; BIBL. 27 REF.Article

MODELING AND EXPERIMENTAL SIMULATION OF THE LOW-FREQUENCY TRANSFER INEFFICIENCY IN BUCKET-BRIGADE DEVICESSCOTT DB; CHAMBERLAIN SG.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 405-414; BIBL. 13 REF.Article

ONE AND A HALF PHASE OPERATION OF A CCD DELAY LINEMORANDI C; MASETTI G.1979; ALTA FREQ.; ITA; DA. 1979; VOL. 48; NO 7; PP. 432-439; BIBL. 3 REF.Article

COMPUTER MODEL AND CHARGE TRANSPORT STUDIES IN SHORT GATE CHARGE-COUPLED DEVICES.ELSAID MH; CHAMBERLAIN SG; WATT LAK et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 1; PP. 61-69; BIBL. 33 REF.Article

USE OF THE WKB AND VARIATIONAL METHODS TO CALCULATE THE FINAL STAGES OF CHARGE TRANSFER IN A CCD.KOSAI K; SINGER BM.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 705-709; BIBL. 10 REF.Article

DUAL-GATE BUCKET-BRIGADE DEVICESBARSAN RM.1980; IEEE TRANS-ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1809-1816; BIBL. 17 REF.Article

CHARGE TRANSFER PERFORMANCE OF MOS BUCKET-BRIGADE DEVICES.ABLASSMEIER U.1977; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1977; VOL. 6; NO 4; PP. 245-251; ABS. ALLEM.; BIBL. 11 REF.Article

CALCUL ANALYTIQUE DU TRANSFERT DE CHARGES DANS UN DISPOSITIF A COUPLAGE PAR CHARGE EN TENANT COMPTE DE LA DUREE DES FRONTS DES IMPULSIONS DE COMMANDESHILIN VA.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 6; PP. 513-519; BIBL. 9 REF.Article

CHARGE TRANSFER PERFORMANCE OF BUCKET-BRIGADE DEVICES WITH MOS TETRODES.ABLASSMEIER U.1978; ARCH. ELEKTRON. UBERTRAG.-TECH.; DTSCH.; DA. 1978; VOL. 32; NO 1; PP. 25-30; ABS. ALLEM.; BIBL. 6 REF.Article

LA DISTRIBUTION QUANTIQUE DES PORTEURS DE CHARGE MOBILES DANS UN DISPOSITIF COUPLE PAR LA CHARGE EN SURFACEIONESCU M.1977; STUD. CERC. FIZ.; ROMAN.; DA. 1977; VOL. 29; NO 9; PP. 893-896; ABS. ANGL.; BIBL. 7 REF.Article

LARGE SIGNAL THEORY OF SURFACE CHARGE COUPLED DEVICESCALZOLARI PU; GRAFFI S.1979; ALTA FREQ.; ITA; DA. 1979; VOL. 48; NO 10; PP. 590-603; BIBL. 9 REF.Article

STEP AND FREQUENCY RESPONSES OF C.T.D.S. WITH NONUNIFORM TRANSFER INEFFICIENCYBARSAN RM.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 13; PP. 389-391; BIBL. 10 REF.Article

THE RESISTIVE GATE CTD AREA-IMAGE SENSORHEYNS H; VAN SANIEN JG.1978; I.E.E.E. IRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 2; PP. 135-139; BIBL. 13 REF.Article

A MULTIPLE-GATE CCD-PHOTODIODE SENSOR ELEMENT FOR IMAGING ARRAYSWHITE JM; CHAMBERLAIN SG.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 2; PP. 125-131; BIBL. 14 REF.Article

AN ANALYTICAL SOLUTION OF THE NONLINEAR TRANSPORT EQUATION THAT DESCRIBES AN MOS TRANSMISSION LINE.LONNGREN KE.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 481-484; BIBL. 10 REF.Article