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Results 1 to 25 of 17684

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SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS SILICON BY FURNACE ANNEALINGKUNII Y; TABE M; KAJIYAMA K et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2847-2849Article

MODELS FOR INTERPRETING DEPOSITION RATE DATA FROM A CLOSED CHEMICAL VAPOUR DEPOSITION SYSTEMCARLSSON JO.1980; J. LESS-COMMON METALS; NLD; DA. 1980; VOL. 71; NO 1; PP. 15-32; BIBL. 16 REF.Article

CHEMICAL VAPOR DEPOSITION FOR PASSIVATION OF INTEGRATED CIRCUITS1981; INSUL., CIRCUITS; ISSN 0020-4544; USA; DA. 1981; VOL. 27; NO 10; PP. 78-81Article

DEPOSITION OF CHROMIUM FILMS BY MULTIPHOTON DISSOCIATION OF CHROMIUM HEXACARBONYL = DEPOT DE COUCHES MINCES DE CHROME PAR DISSOCIATION MULTIPHOTON DE L'HEXACARBONYLE DE CHROMEMAYER TM; FISANICK GJ; EICHELBERGER TS IV et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 8462-8469; BIBL. 15 REF.Article

DESIGN OF PLASMA DEPOSITION REACTORSJOHNSON WL.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 191-195; BIBL. 17 REF.Article

MODELING OF CHEMICAL VAPOR DEPOSITION. III: SILICON EPITAXY FROM CHLOROSILANESKOREC J.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 1; PP. 32-44; BIBL. 28 REF.Article

NUOVE TECNOLOGIE NON INQUINANTI PER IL RIVESTIMENTO DEI MATERIALI MEDIANTE SISTEMI A PLASMA IN FASE VAPORE = A NEW TECHNOLOGY FOR VAPOUR DEPOSITION WITH A PLASMA = NOUVELLE TECHNOLOGIE POUR LES DEPOTS EN PHASE VAPEUR PAR PLASMAGARZINO G.1983; GALVANOTECNICA; ISSN 0016-4240; ITA; DA. 1983; VOL. 34; NO 1; PP. 1-7Article

DEPOSITION MECHANISM OF FINE GLASS PARTICLES AND HIGH-RATE PRODUCTION OF FIBRE PREFORMS IN THE VAD PROCESSSUDA H; SUDO S; NAKAHARA M et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 779-780; BIBL. 6 REF.Article

THICK BORIDE COATINGS BY CHEMICAL VAPOR DEPOSITION = REVETEMENTS EPAIS DE BORURE PAR DEPOT CHIMIQUE EN PHASE VAPEURPIERSON HO; MULLENDORE AW.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 95; NO 2; PP. 99-104; BIBL. 6 REF.Conference Paper

AN OVERVIEW OF THE MODIFIED CHEMICAL VAPOR DEPOSITION (MCVD) PROCESS AND PERFORMANCENAGEL SR; MACCHESNEY JB; WALKER KL et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 4; PP. 459-476; BIBL. 144 REF.Article

PREPARATION OF AMORPHOUS SI3N4-C PLATE BY CHEMICAL VAPOUR DEPOSITIONHIRAI T; GOTO T.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 1; PP. 17-23; BIBL. 23 REF.Article

LOW TEMPERATURE PHOTO-CVD SILICON NITRIDE: PROPERTIES AND APPLICATIONSPETERS JW; GEBHART FL; HALL TC et al.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 9; PP. 121-126; BIBL. 7 REF.Article

V-DH LASER: A LASER WITH A V-SHAPED ACTIVE REGION GROWN BY METALORGANIC C.V.D.MORI Y; MATSUDA O; MORIZANE K et al.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 20; PP. 785-787; BIBL. 5 REF.Article

ETUDE DES CONDITIONS DE DEPOT DU CARBURE DE SILICIUM ET DU CARBONE LORS DE LA DECOMPOSITION DES VAPEURS DE COMPOSES ORGANIQUES DU SILICIUMPLETYUSHKIN AA; IVANOVA LM; SULTANOVA TN et al.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 8; PP. 1412-1416; BIBL. 10 REF.Article

EFFECTS OF CVD OXIDE ON PHOSPHORUS-DIFFUSED EMITTERS IN SILICONKOJI T; TSENG WF; MAYER JW et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; PP. 1310-1312; BIBL. 5 REF.Article

INCORPORATION OF OH IN GLASS IN THE MCVD PROCESS = INCORPORATION DE OH DANS LE VERRE OBTENU PAR PROCEDE MCVDWOOD DL; KOMETANI TY; LUONGO JP et al.1979; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1979; VOL. 62; NO 11-12; PP. 638-639; BIBL. 14 REF.Article

FABRICATION INDUSTRIELLE DE FIBRES OPTIQUES PAR LE PROCEDE MCVDFAURE M; LUMINEAU Y; JOUANIN A et al.1981; REV. TECH. THOMSON-CSF; ISSN 0035-4279; FRA; DA. 1981; VOL. 13; NO 4; PP. 991-1011; ABS. ENG; BIBL. 6 REF.Article

CHARGE STORAGE EFFECTS IN MISS DIODESADAN A; ZOLOMY I.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 57; NO 1; PP. 113-116; ABS. GER; BIBL. 7 REF.Article

FABRICATION OF SINGLE-MODE FIBRES BY V.A.D.TOMARU S; KAWACHI M; EDAHIRO T et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 13; PP. 511-512; BIBL. 7 REF.Article

UNIVERSAL CHEMICAL VAPOUR DEPOSITION SYSTEM FOR METALLURGICAL COATINGSSTOLZ M; HIEBER K; WIECZOREK C et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 100; NO 3; PP. 209-218; BIBL. 5 REF.Article

VAPOR PHASE DEPOSITION OF ALUMINIUM FILM ON QUARTZ SUBSTRATE = DEPOT EN PHASE VAPEUR DE AL SUR UN SUBSTRAT DE QUARTZBISWAS DR; GHOSH C; LAYMAN RL et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 234-236; BIBL. 4 REF.Article

PROTON-ISOLATED NARROW STRIPE VISIBLE LASER GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONMORI Y; SATO H; IKEDA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 293-295; BIBL. 9 REF.Article

GE3N4-INP MIS STRUCTURESPANDE KP; POURDAVOUD S.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 182-184; BIBL. 19 REF.Article

ETUDE DU PROCESSUS DE CROISSANCE DES COUCHES EPITAXIALES DE SILICIUM DANS LE PROCEDE OUVERT AU TETRACHLORUREKOROBOV IV; KOSTROMIN AA; KUZNETSOV YU N et al.1981; Z. PRIKL. HIM.; ISSN 0044-4618; SUN; DA. 1981; VOL. 54; NO 9; PP. 2133-2137; BIBL. 4 REF.Article

SUR L'OBTENTION DE NITRURE DE NIOBIUM A PARTIR DE LA PHASE GAZEUSERYCHAGOV AV; ZHUCHKOVA VK; KOROLEV YU M et al.1981; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1981; NO 5; PP. 75-79; BIBL. 10 REF.Article

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