LA LUMINESCENCE ET L'EMISSION STIMULEE DES IONS YB³⁺ DANS LES GRENATS D'ALUMINIUMBAGDASAROV KH S; BOGOMOLOVA GA; VYLEGZHANIN DN et al.1974; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1974; VOL. 216; NO 6; PP. 1247-1249; BIBL. 5 REF.Article

A DENSELY PACKED MONOLITHIC LINEAR ARRAY OF GAAS-AL_XGA_1-XAS TRIP BROCIED HETEROSTRUCTURE LASERTSANG WT; LOGAN RA; SALATHE RP et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 2; PP. 162-165; BIBL. 4 REF.Article

ON AIF LINES IN SUNSPOTS.MURTY PS.1977; SOLAR PHYS.; NETHERL.; DA. 1977; VOL. 54; NO 2; PP. 377-378; BIBL. 5 REF.Article

PROGRESS IN ND: YAG LASERS.DANIELMEYER HG.1976; LASERS; U.S.A.; DA. 1976; VOL. 4; PP. 1-71; BIBL. 4 P. 1/2Article

SH LASERS WITH A CONSTANT AL DISTRIBUTION IN THE P⁺-AL_XGA_1-X AS REGION.MYSZYNSKI Z; NAKWASKI W.1976; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1976; VOL. 24; NO 2; PP. 153-158; ABS. RUSSE; BIBL. 4 REF.Article

SPIKING OSCILLATIONS IN DIODE-PUMPED NDP₅O₁₄ AND NDAL₃(BO₃)₄ LASERS.CHINN SR; HONG HYP; PIERCE JW et al.1976; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1976; VOL. 12; NO 3; PP. 189-193; BIBL. 14 REF.Article

ETUDE DE L'ADHERENCE SUR LE MOLYBDENE OU LE TUNGSTENE DE REVETEMENTS PAR PLASMA A BASE D'OXYDE D'ALUMINIUMKARPINOS DM; BORISOVA AL; GUBENKO BG et al.1976; POROSHKOV. METALLURG., U.S.S.R.; S.S.S.R.; DA. 1976; NO 1; PP. 60-63; ABS. ANGL.; BIBL. 8 REF.Article

TEMPERATURE DISTRIBUTIONS IN THE GAAS-ALGAAS DOUBLE HETEROSTRUCTURE LASER BELOW AND ABOVE THE THRESHOLD CURRENT.KOBAYASHI T; FURUKAWA Y.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 12; PP. 1981-1986; BIBL. 6 REF.Article

THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA_1-XAL_XAS LASERS.GOODWIN AR; PETERS JR; PION M et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3126-3131; BIBL. 12 REF.Article

VERY LOW THRESHOLD DOUBLE HETEROJUNCTION LASER DIODES OF (ALGA)AS.ETTENBERG M; KRESSEL H.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 487-489; BIBL. 2 REF.Conference Paper

FLASHLAMP-PUMPED YAG: ND⁺³ LASER ACTION AT KILOHERTZ RATES.CORCORAN VJ; MCMILLAN RW; BARNOSKE SK et al.1974; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1974; VOL. 10; NO 8; PP. 168-620; BIBL. 5 REF.Article

GAAS-AL_XGA_1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY.CHO AY; CASEY HC JR.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 5; PP. 288-290; BIBL. 6 REF.Article

LASER MACHINING WITH MODULATED ZONE PLATES.ENGEL A; STEFFEN J; HERZIGER G et al.1974; APPL. OPT.; U.S.A.; DA. 1974; VOL. 13; NO 2; PP. 269-273; BIBL. 8 REF.Article

LOW-CURRENT-DENSITY LED-PUMPED ND: YAG LASER USING A SOLID CYLINDRICAL REFLECTOR. = LASER A GRENAT DE Y-AL: ND POMPE PAR UNE DIODE ELECTROLUMINESCENTE A DENSITE DE COURANT FAIBLE UTILISANT UN REFLECTEUR CYLINDRIQUE PLEINFARMER GI; KIANG YC.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 3; PP. 1356-1371; BIBL. 43 REF.Article

RADIATION FIELDS OF GAAS-(ALGA) AS INJECTION LASERS.BUTLER JK; ZOROOFCHI J.1974; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1974; VOL. 10; NO 10; PP. 809-815; BIBL. 16 REF.Article

RAPID DEGRADATION PHENOMENON IN HETEROJUNCTION GAALAS-GAAS LASERS.PETROFF P; HARTMAN RL.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3899-3903; BIBL. 19 REF.Article

ANALYSIS OF THE THRESHOLD OF DOUBLE HETEROJUNCTION GAAS-GAALAS LASERS WITH A CORRUGATED INTERFACE.NAKAMURA M; YARIV A.1974; OPT. COMMUNIC.; NETHERL.; DA. 1974; VOL. 11; NO 1; PP. 18-20; BIBL. 4 REF.Article

ETUDES COMPLEXES DES CARACTERISTIQUES SPECTRALES DE GENERATION DU CRISTAL DE LUALO₃ CONTENANT LES IONS ND³⁺KAMINSKIJ AA; IVANOV AO; SARKISOV S EH et al.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 71; NO 3; PP. 984-1002; H.T. 1; ABS. ANGL.; BIBL. 28 REF.Article

A STABILIZER FOR CAVITY-DUMPED ND: YAG.KENNEDY CJ.1976; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1976; VOL. 12; NO 4; PP. 256-257; BIBL. 1 REF.Article

CONTINUOUS OPERATION OVER 10000 H OF GAAS/GAALAS DOUBLE-HETEROSTRUCTURE LASER WITHOUT LATTICE MISMATCH COMPENSATION.KAN H; NAMIZAKI H; ISHII M et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 3; PP. 138-139; BIBL. 6 REF.Article

ETCHED BURIED HETEROSTRUCTURE GAAS/GAALAS INJECTION LASERS.BURNHAM RD; SCIFRES DR.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 9; PP. 510-511; BIBL. 3 REF.Article

CARACTERISTIQUES SPECTRALES DU LASER EN ANNEAU A CORPS SOLIDE YAG: ND³⁺, A FONCTIONNEMENT CONTINUKLOCHAN EL; KORNIENKO LS; KRAVTSOV NV et al.1974; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1974; VOL. 19; NO 10; PP. 2096-2104; BIBL. 14 REF.Article

DEGRADATION IN INJECTION LASERS.WOOLHOUSE GR.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 556-561; BIBL. 43 REF.Article

DYNAMIC COUPLING CHARACTERIZATION OF TEM₀₀ND:YAG LASERS.RICE RR; TEAGUE JR; JACKSON JE et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 6; PP. 2716-2720; BIBL. 9 REF.Article

LASER OSCILLATION FROM QUANTUM STATES IN VERY THIN GAAS-AL_0.2GA_0.8AS MULTILAYER STRUCTURES.VAN DER ZIEL JP; DINGLE R; MILLER RC et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 8; PP. 463-465; BIBL. 9 REF.Article