A SELF-CONSISTENT MODEL FOR THE OPTICAL EXCITATIONS OF THE U₂ AND U₁ CENTERS IN ALKALI-HALIDESKOILLER B; BRANDI HS.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 94; NO 2; PP. K179-K183; BIBL. 6 REF.Article

DEFECT FORMATION CHEMISTRY OF EL2 CENTER AT E_C=0.83 EV IN ION-IMPLANTED GALLIUM ARSENIDELI GP; WANG KL.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 8653-8662; BIBL. 41 REF.Article

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DEFECT STATES IN N-TYPE GERMANIUM IRRADIATED WITH 1.5 MEV ELECTRONSFUKUOKA N; SAITO H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 6; PART. 1; PP. 930-935; BIBL. 14 REF.Article

SITE SELECTIVE SPECTROSCOPY AND DEFECT CHEMISTRY OF CAOPORTER LC; WRIGHT JC.1982; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1982; VOL. 77; NO 5; PP. 2322-2329; BIBL. 17 REF.Article

DETERMINATION OF THE ELECTRICAL LEVEL OF VACANCY IN ELECTRON IRRADIATED P-TYPE SILICONMUKASHEV BN; FROLOV VV; KOLODIN LG et al.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 91; NO 7; PP. 358-360; BIBL. 9 REF.Article

QUELQUES PROPRIETES DES NIVEAUX PIEGES FORMES PAR UN TRAITEMENT THERMIQUE DE SI NASTROVA EV; VORONKOV VB; LEBEDEV AA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2074-2075; BIBL. 4 REF.Article

OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAASMARTIN GM.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 9; PP. 747-748; BIBL. 13 REF.Article

DETERMINATION DES NIVEAUX PROFONDS DANS LE SILICIUM DUS A L'IMPLANTATION D'IONS ARGON, PAR LA METHODE DES CARACTERISTIQUES V-FDABBASOVA RU; BOBROVA EA; GALKIN GN et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 3; PP. 448-452; BIBL. 9 REF.Article

ETUDE DE L'HEMATITE COMPRIMEE PAR CHOC A L'AIDE D'UNE TECHNIQUE DE POSITONSALEKSEEVA OK; MAKAROV EF; MESSINEV M YU et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 10; PP. 3099-3103; BIBL. 9 REF.Article

MORE ON THE EMISSION BAND OF THE F-CENTER IN ALKALI HALIDESBOSI L; NIMIS M.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 98; NO 2; PP. K151-K154; BIBL. 16 REF.Article

SELF-CONSISTENT CLUSTER THEORY FOR SYSTEMS WITH OFF-DIAGONAL DISORDERKAPLAN T; LEATH PL; GRAY LJ et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 10; PP. 4230-4246; BIBL. 23 REF.Article

EFFECTS OF ION IMPLANTATION ON DEEP LEVELS IN GAASJERVIS TR; WOODARD DW; EASTMAN LF et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 619-621; BIBL. 6 REF.Article

F_X CENTRES IN CESIUM HALIDESCHITRA SANKAR; SIVASANKAR VS; WHIPPEY PW et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. 383-390; ABS. GER; BIBL. 18 REF.Article

SPECTRAL DISTRIBUTION OF PHOTOCONDUCTIVITY AND LIFETIME IN CDTE AT THE PRESENCE OF SURFACE TRAPPING PROCESSES.TALAT GH; TOMASEK M.1978; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1978; VOL. 28; NO 3; PP. 331-337; H.T. 1; BIBL. 20 REF.Article

PARAMAGNETIC DEFECTS IN THE SURFACE REGION OF PROCESSED SILICON.CAPLAN PJ.1976; A.C.S. SYMP. SER.; U.S.A.; DA. 1976; VOL. 34; PP. 173-181; BIBL. 21 REF.; (MAGN. RESONANCE COLLOID INTERFACE SCI. SYMP. PART OF MEET. AM. CHEM. SOC. 172,. SAN FRANCISCO; 1976)Conference Paper

NATIVE POINT DEFECTS IN GA_XAL_1-XASYP_1-YHO ES; DOW JD.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 2; PP. 1115-1118; BIBL. 24 REF.Article

OPTICAL EXCITATION OF DEFECTS IN MOLECULAR BEAM EPITAXY GROWN GAAS WITH POLARIZED LIGHTBLOOD P; GRASSIE ADC.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 4; PP. 2548-2550; BIBL. 7 REF.Article

MODEL HAMILTONIAN WANNIER FUNCTIONSCRAIG BI; SMITH PV.1982; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982; VOL. 109; NO 1; PP. 303-313; ABS. GER; BIBL. 31 REF.Article

SEMIEMPIRICAL CALCULATIONS OF DEFECT PROPERTIES IN LIF CRYSTAL. II: ELECTRON AND HOLE CENTRES AND THEIR RECOMBINATIONKOTOMIN EA; SHLUGER AL.1982; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982; VOL. 109; NO 1; PP. 75-81; ABS. RUS; BIBL. 33 REF.Article

INFLUENCE DES CORRELATIONS INTRASITES SUR LE SPECTRE D'ENERGIE DES ELECTRONS DES DISLOCATIONSRYZHKIN IA.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 1; PP. 50-54; BIBL. 4 REF.Article

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ELECTRONIC STATE CALCULATIONS OF DISLOCATIONS IN CADMIUM TELLURIDEOBERG S.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 2; PP. 357-362; BIBL. 9 REF.Article

ELECTRONIC STRUCTURE OF THE UNRECONSTRUCTED 30^O PARTIAL DISLOCATION IN SILICONNORTHRUP JE; COHEN ML; CHELIKOWSKY JR et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 8; PP. 4623-4628; BIBL. 18 REF.Article

QUASI BANDS IN GREEN'S-FUNCTION DEFECT MODELSLINDEFELT U; ZUNGER A.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 10; PP. 5913-5931; BIBL. 42 REF.Article