Microscopic theory of the supercurrent through the superconductor-inversion layer-superconductor junctionTANAKA, Y; TSUKADA, M.Solid state communications. 1987, Vol 61, Num 7, pp 445-449, issn 0038-1098Article

Magnétorésistance positive forte de la couche d'inversion électronique dans le domaine de conductivité par activationSEMENCHINSKIJ, S. G.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1986, Vol 43, Num 10, pp 468-470, issn 0370-274XArticle

Inversion layer mobility of MOSFET's with nitrided oxide gate dielectricsSCHMIDT, M. A; TERRY, F. L. JR; MATHUR, B. P et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1627-1632, issn 0018-9383Article

Ein objektiver Index für abgehobene Inversionen = An objective index of elevated inversionsSABO, P.Zeitschrift für Meteorologie. 1989, Vol 39, Num 4, pp 217-221, issn 0084-5361, 5 p.Article

In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) SiIRIE, H; KITA, K; KYUNO, K et al.International Electron Devices Meeting. 2004, pp 225-228, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Normal electric field dependence of electron mobility in MOS inversion layerSHIRAHATA, M; HAMAGUCHI, C.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp 1040-1044, issn 0021-4922, 1Article

Lateral motion of the inversion layer of MOS structures in regions of variable doping density and oxide thicknessHAWKINS, G. A; LAVINE, J. P; TRABKA, E. A et al.Solid-state electronics. 1986, Vol 29, Num 8, pp 815-823, issn 0038-1101Article

Temperature inversion buildup in Colorado's Eagle ValleyWHITEMAN, C. D.Meteorology and atmospheric physics (Print). 1986, Vol 35, Num 4, pp 220-226, issn 0177-7971Article

Acoustic inversions for measuring boundary layer suspended sediment processesTHORNE, Peter D; HURTHER, David; MOATE, Benjamin D et al.The Journal of the Acoustical Society of America. 2011, Vol 130, Num 3, pp 1188-1200, issn 0001-4966, 13 p.Article

NBTI mechanism in ultra-thin gate dielectric: Nitrogen-originated mechanism in SiONMITANI, Yuichiro; NAGAMINE, Makoto; SATAKE, Hideki et al.IEDm : international electron devices meeting. 2002, pp 509-512, isbn 0-7803-7462-2, 4 p.Conference Paper

Hopping magnetoconduction and the random structure in quasi one-dimensional inversion layersKALIA, R. K; XUE, W; LEE, P. A et al.Physical review letters. 1986, Vol 57, Num 13, pp 1615-1618, issn 0031-9007Article

Carrier transport modelling in the inversion layer of submicron semiconductor devicesSALA, C; MAGNUS, W; DE MEYER, K et al.Alta frequenza. 1990, Vol 1, Num 3, pp 313-317, issn 0002-6557Article

Optically induced inversion in the MIS solar cellABDOU, A. A; HABIB, S. E.-D.Solid-state electronics. 1986, Vol 29, Num 7, pp 751-758, issn 0038-1101Article

Dynamical adjustment of the trade wind inversion layerSCHUBERT, W. H; CIESIELSKI, P. E; CHUNGU LU et al.Journal of the atmospheric sciences. 1995, Vol 52, Num 16, pp 2941-2952, issn 0022-4928Article

The dependence of the inversion layer thickness on the film thickness in thin-film SOI structuresXIA YONGWEI; WANG SHOUWU.Chinese physics. 1991, Vol 11, Num 3, pp 716-719, issn 0273-429XArticle

Characteristics of the low-level temperature inversion along the Alaskan Artic coastKAHL, J. D.International journal of climatology. 1990, Vol 10, Num 5, pp 537-548, issn 0899-8418Article

1/f noise in ohmic MOS inversion layersHAYAT, S. A; JONES, B. K; RUSSELL, P. C et al.Semiconductor science and technology. 1988, Vol 3, Num 9, pp 919-925, issn 0268-1242Article

A note on the equality of bulk and inversion-layer capacitance at thresholdWARNER, R. M. JR.Solid-state electronics. 1987, Vol 30, Num 2, pp 181-183, issn 0038-1101Article

Effect of an applied magnetic field on interface excitations in finite layered structuresKUSHWAHA, M. S.Physical review. B, Condensed matter. 1987, Vol 35, Num 8, pp 3871-3878, issn 0163-1829Article

Quantum Hall effect in silicon metal-oxide-semiconductor inversion layers: experimental conditions for determination of h/e²YOSHIHIRO, K; KINOSHITA, J; INAGAKI, K et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 6874-6896, issn 0163-1829Article

Magnetoconductivity of insulating silicon inversion layersTSUI, Yeekin; VITKALOV, S. A; SARACHIK, M. P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 3, pp 033312.1-033312.4, issn 1098-0121Article

Prediction of layer-inversion behavior of binary-solid liquid fluidized beds: Comparison of modelsASIF, Mohammad.Chemical engineering & technology. 2004, Vol 27, Num 7, pp 763-767, issn 0930-7516, 5 p.Article

On the gate capacitance of mos structures in N-channel inversion layers on ternary chalcopyrite semiconductorsGHATAK, K. P; CHATTOPADHYAY, N; MONDAL, M et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 4, pp 365-371, issn 0721-7250Article

A novel low resistive metal-insulator-semiconductor (MIS) inversion layer solar cell structureCHATTOPADHYAY, P.Solid-state electronics. 1988, Vol 31, Num 11, pp 1641-1643, issn 0038-1101Article

MOSFET model continuous from weak to strong inversionABU-ZEID, M. M; DE JONG, G. G.Electronics Letters. 1987, Vol 23, Num 24, pp 1299-1300, issn 0013-5194Article