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Formation mechanism of graphene buffer layer on SiG(0001)STRUPINSKI, W; GRODECKI, K; CABAN, P et al.Carbon (New York, NY). 2015, Vol 81, pp 63-72, issn 0008-6223, 10 p.Article
Buffer layer free graphene on SiC(0001) via interface oxidation in water vaporOSTLER, Markus; FROMM, Felix; KOCH, Roland J et al.Carbon (New York, NY). 2014, Vol 70, pp 258-265, issn 0008-6223, 8 p.Article
YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometerCUI, G; BEETZ, C. P; BOERSTLER, R et al.IEEE transactions on applied superconductivity. 1993, Vol 3, Num 1, pp 2914-2917, issn 1051-8223, 4Conference Paper
Multiple roles of bathocuproine employed as a buffer-layer in organic light-emitting diodesWANG, Yuan-Min; FENG TENG; ZHOU, Qing-Cheng et al.Applied surface science. 2006, Vol 252, Num 6, pp 2355-2359, issn 0169-4332, 5 p.Article
Solution Derived Sm2O3 Films on Biaxially Textured Ni-W SubstratesLIN WANG; DONGQI SHI; QI LI et al.IEEE transactions on applied superconductivity. 2011, Vol 21, Num 3, pp 2981-2983, issn 1051-8223, 3 p., 3Conference Paper
Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasmaKOREVAAR, B. A; PETIT, A. M. H. N; SMIT, C et al.sans titre. 2002, pp 1230-1233, isbn 0-7803-7471-1, 4 p.Conference Paper
Improved performance of organic light-emitting devices with plasma treated ITO surface and plasma polymerized methyl methacrylate buffer layerLIM, Jae-Sung; SHIN, Paik-Kyun.Applied surface science. 2007, Vol 253, Num 8, pp 3828-3833, issn 0169-4332, 6 p.Article
CIGS devices with ZIS, In2S3, and CdS buffer layersDELAHOY, A. E; AKHTAR, M; CAMBRIDGE, J et al.sans titre. 2002, pp 640-643, isbn 0-7803-7471-1, 4 p.Conference Paper
Stability enhancement of organic electroluminescent diode through buffer layer or rubrene doping in hole-transporting layerZHANG, Z.-L; JIANG, X.-Y; XU, S.-H et al.Synthetic metals. 1997, Vol 91, Num 1-3, pp 131-132, issn 0379-6779Conference Paper
Effects of ZnO buffer layer on GZO RRAM devicesZHAO, Jian-Wei; JIAN SUN; HUANG, Hai-Qin et al.Applied surface science. 2012, Vol 258, Num 10, pp 4588-4591, issn 0169-4332, 4 p.Article
Effects of Cr buffer layer thickness on the microstructure and the properties of Ni thin films deposited on polyimide substrateJUN XU; TIANMIN SHAO.Applied surface science. 2011, Vol 258, Num 4, pp 1565-1571, issn 0169-4332, 7 p.Article
Patterning thin metallic film via laser structured weakly bound templateKERNER, Gabriel; STEIN, Ori; ASSCHER, Micha et al.Surface science. 2006, Vol 600, Num 10, pp 2091-2095, issn 0039-6028, 5 p.Article
The state of the art and prospects of CdxHg1-xTe molecular beam epitaxyVARAVIN, V. S; GUTAKOVSKY, A. K; SIDOROV, Yu. G et al.SPIE proceedings series. 2003, pp 398-406, isbn 0-8194-4986-5, 9 p.Conference Paper
Structural and magnetoresistive properties of Co/Cu multilayersMARSZAŁEK, M; JAWORSKI, J; MICHALIK, A et al.Journal of magnetism and magnetic materials. 2001, Vol 226-30, pp 1735-1737, issn 0304-8853, 2Conference Paper
DNA Adsorption to and Elution from Silica Surfaces: Influence of Amino Acid BuffersVANDEVENTER, Peter E; MEJIA, Jorge; NADIM, Ali et al.The Journal of physical chemistry. B. 2013, Vol 117, Num 37, pp 10742-10749, issn 1520-6106, 8 p.Article
Improved electrical and optical properties of MEH-PPV light emitting diodes using Ba buffer layer and porphyrinKUMAR, Amit; BHATNAGAR, P. K; MATHUR, P. C et al.Applied surface science. 2006, Vol 252, Num 11, pp 3953-3955, issn 0169-4332, 3 p.Conference Paper
The influence of the optical band gap of buffer layers at the P/I- and I/N-side on the performance of amorphous silicon germanium solar cellsLUNDSZIEN, Dietmar; YONG FENG; FINGER, Friedhelm et al.sans titre. 2002, pp 1218-1221, isbn 0-7803-7471-1, 4 p.Conference Paper
Photoconductivity of Si/Ge buffers, superlattices, and multiple quantum wellsMENZEL, D; KOSCHINSKI, W; DETTMER, K et al.Thin solid films. 1999, Vol 342, Num 1-2, pp 312-316, issn 0040-6090Article
Sputtered YBa2Cu3Oy thin films on sapphire and silicon substrates using yttria stabilized ZrO2 buffer layersSCHMIDT, H; HRADIL, K; GIERES, G et al.Physica. C. Superconductivity. 1991, Vol 180, Num 1-4, pp 34-37, issn 0921-4534Conference Paper
Epitaxial growth of Al on Si(111) with Cu buffer layersBAEZA, Patricia A; PEDERSEN, K; RAFAELSEN, J et al.Surface science. 2006, Vol 600, Num 3, pp 610-616, issn 0039-6028, 7 p.Article
Interactions between superconducting YBa2Cu3O7-x and silicon using different buffer layersJIA, Q. X; JIAO, K. L; ANDERSON, W. A et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3364-3366, issn 0021-8979Article
Effect of Au buffer on the field emission characteristics of chemical vapor deposited diamond filmsLEE, J. S; LIU, K. S; CHUANG, F. Y et al.Applied surface science. 1997, Vol 113114, pp 264-268, issn 0169-4332Conference Paper
Morphology and wettability of ZnO nanostructures prepared by hydrothermal method on various buffer layersLI, Bao-Jia; HUANG, Li-Jing; MING ZHOU et al.Applied surface science. 2013, Vol 286, pp 391-396, issn 0169-4332, 6 p.Article
InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layerLEW, K. L; YOON, S. F; TANOTO, H et al.Electronics Letters. 2008, Vol 44, Num 3, pp 243-244, issn 0013-5194, 2 p.Article
Buffer layers grown by replicating the texture of an original template tapeLIM, Sunme; YOO, Jaeun; PARK, Chan et al.Physica. C. Superconductivity. 2007, Vol 451, Num 2, pp 77-81, issn 0921-4534, 5 p.Article