kw.\*:("Couche accumulation")
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Surface modes in accumulation layersPURI, A; SCHAICH, W. L.Physical review. B, Condensed matter. 1985, Vol 31, Num 2, pp 974-980, issn 0163-1829Article
SUBBAND STRUCTURE OF AN ACCUMULATION LAYER UNDER STRONG MAGNETIC FIELDS.ANDO T.1975; J. PHYS. SOC. JAP.; JAP.; DA. 1975; VOL. 39; NO 2; PP. 411-417; BIBL. 23 REF.Article
Subband structure of n-type accumulation and inversion layers in GaAs-Ge heterojunctionsHAUTMAN, J; SANDER, L. M.Physical review. B, Condensed matter. 1985, Vol 32, Num 2, pp 980-985, issn 0163-1829Article
Nonlocal exchange-correlation energy in very inhomogeneous systems: quasi-two-dimensional electron layersHAUTMANN, J; SANDER, L. M.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7000-7004, issn 0163-1829Article
Temperature dependence of hybrid quantum oscillationsNEALON, M; DOEZEMA, R. E.Solid state communications. 1984, Vol 50, Num 7, pp 661-663, issn 0038-1098Article
Pb induced charge accumulation on InAs(111)BSZAMOTA-LEANDERSSON, K; BUGOI, R; GOTHELID, M et al.Surface science. 2007, Vol 601, Num 15, pp 3246-3252, issn 0039-6028, 7 p.Article
Size scaling of the addition spectra in silicon quantum dotsBOEHM, M; HOFHEINZ, M; JEHL, X et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 3, pp 033305.1-033305.4, issn 1098-0121Article
Magnetoresistance of inversion and accumulation layers in MOS structures on p-Si(100)DOLGOPOLOV, V. T; DOROZHKIN, S. I; SHASHKIN, A. A et al.Solid state communications. 1984, Vol 50, Num 3, pp 273-277, issn 0038-1098Article
Bitstream switching for progressive fine granularity scalable video codingJIZHENG XU; FENG WU; SHIPENG LI et al.SPIE proceedings series. 2003, pp 189-197, isbn 0-8194-5023-5, 3Vol, 9 p.Conference Paper
Thick resist patterning using the contrast enhanced layer methodKOMAI, M; YOTSUMOTO, S; FUJIWARA, H et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 7, pp 1979-1983, issn 0013-4651Article
ELECTRON TUNNELING IN SI-SIO2-AL STRUCTURES: A COMPARISON BETWEEN <100> ORIENTED AND <111> ORIENTED SIKRIEGER G; SWANSON RM.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 818-819; BIBL. 4 REF.Article
ACCUMULATION ANORMALE DE PORTEURS CHAUDS DANS LES SEMICONDUCTEURSSTEFANOVICH AE; TSENDIN LD.1976; FIZ. TEKH. POLUPROVOCN.; S.S.S.R.; DA. 1976; VOL. 10; NO 4; PP. 682-689; BIBL. 8 REF.Article
VERY STRONG ACCUMULATION LAYERS ON ZNO SURFACES.EGER D; MANY A; GOLDSTEIN Y et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 55; NO 3; PP. 197-198; BIBL. 9 REF.Article
ACCUMULATION-LAYER SURFACE-WAVE CONVOLVERSMITH JM; STERN E; BERS A et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 6; PP. 145-146; BIBL. 6 REF.Serial Issue
LOW FIELD MAGNETOCONDUCTIVITY IN THIN CRYSTALSSOONPAA HH.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 31; NO 7; PP. 493-496; BIBL. 13 REF.Article
ACCUMULATION- AND INVERSION-LAYER HALL MOBILITIES IN SILICON FILMS ON SAPPHIREIPRI AC.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 1; PP. 16-18; BIBL. 12 REF.Serial Issue
ENERGY LEVELS OF N-CHANNEL ACCUMULATION LAYER ON INP SURFACEDAS SARMA S.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 6; PP. 483-485; BIBL. 14 REF.Article
ELECTRON MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACESSUN SC; PLUMMER JD.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1497-1508; BIBL. 39 REF.Article
SURFACE QUANTIZATION IN TELLURIUM.THUILLIER JC.1975; IN: PHYS. SOUS CHAMPS MAGN. INTENSES. COLLOQ. INT. C.N.R.S. NO. 242; GRENOBLE; 1974; PARIS; C.N.R.S.; DA. 1975; PP. 189-193; ABS. FR.; BIBL. 16 REF.Conference Paper
SURFACE QUANTUM OSCILLATIONS IN ACCUMULATION AND INVERSION LAYERS ON TELLURIUM.SILBERMANN R; LANDWEHR G.1975; SOLIC STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 9; PP. 1055-1058; BIBL. 12 REF.Article
QUANTUM OSCILLATIONS IN TELLURIUM SURFACES.SILBERMANN R; LANDWEHR G.1975; IN: PHYS. SOUS CHAMPS MAGN. INTENSES. COLLOQ. INT. C.N.R.S. NO 242; GRENOBLE; 1974; PARIS; C.N.R.S.; DA. 1975; PP. 229-233; ABS. FR.; BIBL. 13 REF.Conference Paper
ACCUMULATION AND INVERSION LAYERS ON SEMICONDUCTOR SURFACES.KEYES RW.1976; COMMENTS SOLID STATES PHYS.; G.B.; DA. 1976; VOL. 7; NO 3; PP. 53-58; BIBL. 9 REF.Article
THE CYCLOTRON RESONANCE LINEWIDTH IN TWO DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSEKRESS ROGERS E; NICHOLAS RJ; CHEVY A et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 12; PP. 2439-2448; BIBL. 21 REF.Article
CALCULATION OF SURFACE STATES IN ACCUMULATION LAYER OF TELLURIUM.KACZMAREK E; BANGERT E.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 3; PP. 165-168; ABS. ALLEM.; BIBL. 8 REF.Article
QUANTIZATION EFFECTS IN SEMICONDUCTOR INVERSION AND ACCUMULATION LAYERSPALS JA.1972; PHILIPS RES. REP., SUPPL.; NETHERL.; DA. 1972; NO 7; PP. 1-84; BIBL. 2 P. 1/2Serial Issue