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Optically pumped stimulated emission from CuGa(S0.65Se0.35)2/CuAl0.3Ga0.7(S0.65Se0.35)2 double heterostructure grown by metalorganic vapor phase epitaxyYAMAMOTO, M; OGAWA, T; HARA, K et al.Japanese journal of applied physics. 1994, Vol 33, Num 5A, pp L624-L626, issn 0021-4922, 2Article

Low temperature resonant secondary emission in CuGaS2 by Γ point excitationYAMAMOTO, N; KITAKUNI, M; SUSAKI, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 6A, pp 3019-3022, issn 0021-4922, 1Article

Pressure and temperature dependences of the Raman-active phonons in CuGaS2GONZALEZ, J; MOYA, E; CHERVIN, J. C et al.The Journal of physics and chemistry of solids. 1995, Vol 56, Num 3-4, pp 571-575, issn 0022-3697Conference Paper

Bound exciton in CuGaS2SYRBU, N. N; NEMERENCO, L. L; BEJAN, V. N et al.Optics communications. 2007, Vol 280, Num 2, pp 387-392, issn 0030-4018, 6 p.Article

Properties of several varieties of CuGaS2 microcrystalsJULIEN, C; BARNIER, S.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 86, Num 2, pp 152-156, issn 0921-5107Article

Orientation of CuGaS2 thin films on (1 0 0) GaAs and GaP substratesOISHI, K; KOBAYASHI, S; OHTA, S.-I et al.Journal of crystal growth. 1997, Vol 177, Num 1-2, pp 88-94, issn 0022-0248Article

Growth and characterization of CuGaS2 thin film on (100) Si by vacuum deposition with three sourcesOISHI, K; KOBAYASHI, S; KANEKO, F et al.Journal of crystal growth. 1995, Vol 153, Num 3-4, pp 158-163, issn 0022-0248Article

Growth and morphology of the CuGaS2, CuAlSe2, CuGaSe2 and CuInS2 ternary compounds = Wachstum und Morphologie der ternaeren Verbindungen CuGaS2, CuAlSe2, CuGaSe2 und CuInS2BODNAR, I.V; BODNAR, I.T; VAIPOLIN, A.A et al.Crystal research and technology (1979). 1984, Vol 19, Num 12, pp 1553-1557, issn 0232-1300Article

The interference of additional waves of forbidden polaritons excited by allowed polaritons in CuGaS2SYRBU, N. N; URSAKI, V. V; TIGINYANU, I. M et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 9-10, pp 1967-1971, issn 0022-3697, 5 p.Conference Paper

Photoluminescence of vacuum-deposited CuGaS2 thin filmsBOTHA, J. R; BRANCH, M. S; CHOWLES, A. G et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 1065-1068, issn 0921-4526Conference Paper

Raman scattering and two-phonon infrared transmission spectra of Cu(AlxGa1-x)S2 crystalsTERASAKO, T; TSUBOI, N; UCHIKI, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 3A, pp 997-1005, issn 0021-4922, 1Article

Interference of resonance luminescence of exciton polaritons in CuGaS2 crystalsSYRBU, N. N; NEMERENCO, L. L; STAMOV, I. G et al.Optics communications. 2007, Vol 272, Num 1, pp 124-130, issn 0030-4018, 7 p.Article

Vaor-phase atomic layer epitaxy of CuGaS2 at atmospheric pressure using metal chlorides and H2STSUBOI, N; ISU, T; KAKUDA, N et al.Japanese journal of applied physics. 1994, Vol 33, Num 2B, pp L244-L246, issn 0021-4922, 2Article

Photoluminescence of epitaxial CuGaS2 on Si(111): model for intrinsic defect levelsMETZNER, H; EBERHARDT, J; CIESLAK, J et al.Thin solid films. 2004, Vol 451-52, pp 241-244, issn 0040-6090, 4 p.Conference Paper

Microstructure of epitaxial CuGaS2 on Si(111)CIESLAK, J; METZNER, H; HAHN, Th et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 9-10, pp 1777-1780, issn 0022-3697, 4 p.Conference Paper

Optical investigation of defects in AgGaS2 and CuGaS2CHOI, I.-H; YU, P. Y.The Journal of physics and chemistry of solids. 1996, Vol 57, Num 11, pp 1695-1704, issn 0022-3697Article

Heteroepitaxial growth of CuCaS2 layers by low-pressure metalorganic chemical vapor depositionCHICHIBU, S; SHIRAKATA, S; UCHIDA, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 8A, pp 3991-3997, issn 0021-4922, 1Article

Optical properties of epitaxial CuGaS2 layers on Si(111)EBERHARDT, J; METZNER, H; HAHN, Th et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 9-10, pp 1781-1785, issn 0022-3697, 5 p.Conference Paper

First-principles calculations on vibrational and dielectric properties of chalcopyrite CuGaS2AKDOGAN, Mustafa; ERYIGIT, Resul.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 32, pp 7493-7502, issn 0953-8984Article

Optical second-harmonic generation from CuGaS2 (112) bulk single crystalsTANAKA, Kunihiko; UCHIKI, Hisao.Optics communications. 2001, Vol 193, Num 1-6, pp 313-317, issn 0030-4018Article

Multiple-Raman resonant Raman scattering in CuGaS2SUSAKI, M; YAMAMOTO, N; PREVOT, B et al.Japanese journal of applied physics. 1996, Vol 35, Num 3, pp 1652-1656, issn 0021-4922, 1Article

Anharmonic properties of soft modes in CuGaS2 and AgGaS2 chalcopyrite semiconductorsGONZALEZ, J; ROA, L; FOURET, R et al.Physica status solidi. B. Basic research. 2001, Vol 225, Num 2, pp R12-R14, issn 0370-1972Article

CuGa(SxSe1-x)2 alloys at high pressure : optical absorption and X-ray diffraction studiesGONZALEZ, J; CALDERON, E; TINOCO, T et al.The Journal of physics and chemistry of solids. 1995, Vol 56, Num 3-4, pp 507-516, issn 0022-3697Conference Paper

Growth of CuGaS2 single crystals by the traveling heater method using CuI solventMIYAKE, H; HATA, M; HAMAMURA, Y et al.Journal of crystal growth. 1994, Vol 144, Num 3-4, pp 236-242, issn 0022-0248Article

Preparation of CuGaS2/ZnS structures on GaAs(100) substrate by pulsed excimer-laser depositionUCHIKI, H; YAMAGUCHI, M.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp L868-L870, issn 0021-4922, 2Article

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