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Characterization of thin film ZnO/ZnCdS/CuGaSe₂ heterojunctionsRAMAKRISHNA REDDY, K. T; JAYARAMA REDDY, P.Thin solid films. 1994, Vol 253, Num 1-2, pp 238-242, issn 0040-6090Conference Paper

Control of two-step growth processes of chalcopyrite thin films by X-ray fluorescence spectroscopyKLENK, M; SCHENKER, O; ALBERTS, V et al.Applied surface science. 2001, Vol 173, Num 1-2, pp 62-68, issn 0169-4332Article

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Electronically active defects in CuGaSe₂-based heterojunction solar cellsJASENEK, A; RAU, U; NADENAU, V et al.Thin solid films. 2000, Vol 361-62, pp 415-419, issn 0040-6090Conference Paper

Growth of CuGaSe₂ film by molecular beam epitaxyYAMADA, A; MAKITA, Y; NIKI, S et al.Microelectronics journal. 1996, Vol 27, Num 1, pp 53-58, issn 0959-8324Article

The thermoelectric power of ferromagnetically ordered Cu_1-xGa_xCr₂Se₄ spinelsGRON, T; BÄRNER, K; KLEEBERG, C et al.Physica. B, Condensed matter. 1996, Vol 225, Num 3-4, pp 191-196, issn 0921-4526Article

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The influence of the lattice misfit on the growth of CuGaSe₂ epitaxial films on {1O0}-oriented GaAs and GaP substrates = L'influence de l'accommodation de défaut de réseau sur la croissance de films de CuGaSe déposés en phase vapeur sur des substrats de GaP et GaAs orientés(100) = Der Einfluss der Gitterfehlpassung auf das Wachstum von CuGaSe, Filmen, aufgedampft auf {100}-orientierte GaAs und GaP substrateSCHUMANN, B; TEMPEL, A; KUEHN, C et al.Crystal research and technology (1979). 1983, Vol 18, Num 1, pp 71-75, issn 0232-1300Article

Persistent photoconductivity in n- and p-type CuGaSe₂SCHÖN, J. H; BUCHER, E.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 1, pp 25-29, issn 0022-3727Article

Temperature dependence of the fundamental absorption edge in CuGa₃Se₅MARIN, G; RINCON, C; WASIM, S. M et al.Journal of alloys and compounds. 1999, Vol 283, Num 1-2, pp 1-4, issn 0925-8388Article

Phase diagrams of the (Cu₂Se, CuSe)-CuGaSe₂ system and the crystal growth of CuGaSe₂ by the solution methodJITSUKAWA, H; MATSUSHITA, H; TAKIZAWA, T et al.Journal of crystal growth. 1998, Vol 186, Num 4, pp 587-593, issn 0022-0248Article

Electrical conductivity and near-infrared absorption of CuGaSe₂ thin filmsMANSOUR, B. A; EL-HAGARY, M. A.Physica status solidi. A. Applied research. 1994, Vol 146, Num 2, pp 669-673, issn 0031-8965Article

Low-pressure metalorganic chemical vapor deposition of a CuGaSe₂/CuAlSe₂ heterostructureCHICHIBU, S; SUDO, R; YOSHIDA, N et al.Japanese journal of applied physics. 1994, Vol 33, Num 3A, pp L286-L289, issn 0021-4922, 2Article

Solid solutions CuGaSe_2xTe_2(1-x)BODNAR', I. V.Russian journal of inorganic chemistry. 1993, Vol 38, Num 12, pp 1931-1934, issn 0036-0236Article

Substitutional sites of Co²⁺ ions in CuGa_1-xAl_xSe₂:Co²⁺ crystalsWEN-CHEN, Zheng; SHAO-YI, Wu; BEI-JUN, Zhao et al.The Journal of physics and chemistry of solids. 2002, Vol 63, Num 5, pp 895-897, issn 0022-3697Article

Photoluminescence properties of Ge-implanted CuGaSe₂ crystalsKRUSTOK, J; RAUDOJA, J; SCHÖN, J. H et al.Physica status solidi. A. Applied research. 2000, Vol 178, Num 2, pp 805-809, issn 0031-8965Article

Pulling of bulk CuGaSe₂ crystals from indium solutionTANAKA, A; AIKAWA, K; KATSUNO, H et al.Journal of crystal growth. 1997, Vol 178, Num 3, pp 350-354, issn 0022-0248Article

Thermal analysis of chemical reaction forming the CuGaSe₂ single phaseMATSUSHITA, H; JITSUKAWA, H; TAKIZAWA, T et al.Japanese journal of applied physics. 1996, Vol 35, Num 7, pp 3830-3835, issn 0021-4922, 1Article

The thermoelectric power of ferromagnetically ordered Cu_1-xGa_xCr₂Se₄ spinelsGRON, T; BÄRNER, K; KLEEBERG, C et al.Journal de physique. IV. 1997, Vol 7, Num 1, pp C1-281, issn 1155-4339, -C1-282Conference Paper

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Exciton-phonon spectra and energy band structure of CuGaSe₂ crystalsSYRBU, N. N; BOGDANASH, M; TEZLEVAN, V. E et al.Journal of physics. Condensed matter (Print). 1997, Vol 9, Num 6, pp 1217-1223, issn 0953-8984Article

Molecular beam epitaxy of CuGaSe₂ on GaAs substrate using metalorganic copper and gallium precursorsSHIRAKATA, S; TAMURA, K; ISOMURA, S et al.Japanese journal of applied physics. 1996, Vol 35, Num 5A, pp L531-L534, issn 0021-4922, 2Article