Fabrication of n- and p-type doped CuFeSe₂ thin films achieved by selenization of metal precursorsHAMDADOU, N; MORSLI, M; KHELIL, A et al.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 6, pp 1042-1049, issn 0022-3727, 8 p.Article

Combined X-ray absorption and X-ray diffraction studies of CuGaS₂, CuGaSe₂, CuFeS₂ and CuFese₂ under high pressureTINOCO, T; ITIE, J. P; POLIAN, A et al.Journal de physique. IV. 1994, Vol 4, Num 9, pp 151-154, issn 1155-4339Conference Paper

Growth technology and X-ray investigation results of CuFeSe₂crystal modificationsNAJAFOV, A. I; GUSEINOV, G. G; ALEKPEROV, O. Z et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 9-10, pp 1873-1875, issn 0022-3697, 3 p.Conference Paper

The synthesis of CuFeSe₂ through a solventothermal processQINGYI LU; JUNQING HU; KAIBIN TANG et al.Journal of crystal growth. 2000, Vol 217, Num 3, pp 271-273, issn 0022-0248Article